Inventor · disambiguated record
Christophe Pomarede
Also filed as: POMAREDE CHRISTOPHE · POMAREDE CHRISTOPHE F · POMAREDE CHRISTOPHE F L · POMAREDE CHRISTOPHE FRANCOIS L
20 granted patents·5 pending applications·1,505 citations·filing 2001–2015
96Inventor score
Top patents by PatentIndex Score
25 records- 0199US7297641B2Method to form ultra high quality silicon-containing compound layersASM INC·Filed 2003·Granted Nov 20, 2007·625 cites·20 claims
- 0298US7964513B2Method to form ultra high quality silicon-containing compound layersASM INC·Filed 2009·Granted Jun 21, 2011·75 cites·19 claims
- 0398US7651953B2Method to form ultra high quality silicon-containing compound layersASM INC·Filed 2007·Granted Jan 26, 2010·79 cites·24 claims
- 0498US6613695B2Surface preparation prior to depositionASM INC·Filed 2001·Granted Sep 2, 2003·314 cites·19 claims
- 0595US7294582B2Low temperature silicon compound depositionASM INT·Filed 2005·Granted Nov 13, 2007·116 cites·44 claims
- 0694US6960537B2Incorporation of nitrogen into high k dielectric filmASM INC·Filed 2002·Granted Nov 1, 2005·61 cites·16 claims
- 0792US7026219B2Integration of high k gate dielectricASM INC·Filed 2002·Granted Apr 11, 2006·55 cites·42 claims
- 0889US6958277B2Surface preparation prior to depositionASM INC·Filed 2003·Granted Oct 25, 2005·33 cites·15 claims
- 0987US7405453B2Incorporation of nitrogen into high k dielectric filmASM INC·Filed 2005·Granted Jul 29, 2008·9 cites·19 claims
- 1085US9238865B2Multiple vapor sources for vapor depositionPOMAREDE CHRISTOPHE·Filed 2012·Granted Jan 19, 2016·9 cites·9 claims
- 1185US6806145B2Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layerASM INT·Filed 2002·Granted Oct 19, 2004·39 cites·38 claims
- 1284US9873942B2Methods of vapor deposition with multiple vapor sourcesASM IP HOLDING BV·Filed 2015·Granted Jan 23, 2018·3 cites·19 claims
- 1383US7629270B2Remote plasma activated nitridationASM INC·Filed 2005·Granted Dec 8, 2009·11 cites·51 claims
- 1483US7569284B2Incorporation of nitrogen into high k dielectric filmASM INC·Filed 2008·Granted Aug 4, 2009·6 cites·5 claims
- 1579US7056835B2Surface preparation prior to depositionASM INC·Filed 2003·Granted Jun 6, 2006·15 cites·13 claims
- 1678US7476627B2Surface preparation prior to depositionASM INC·Filed 2006·Granted Jan 13, 2009·4 cites·9 claims
- 1775US7022613B2Reduced cross-contamination between chambers in a semiconductor processing toolASM INC·Filed 2004·Granted Apr 4, 2006·17 cites·20 claims
- 1875US6825051B2Plasma etch resistant coating and processASM INC·Filed 2002·Granted Nov 30, 2004·21 cites·17 claims
- 1971US6797617B2Reduced cross-contamination between chambers in a semiconductor processing toolASM INC·Filed 2003·Granted Sep 28, 2004·13 cites·25 claims
- 2056US2008003763A1Method of depositing silicon with high step coverageASM INC·Filed 2007·Application pending·0 cites
- 2147US7790556B2Integration of high k gate dielectricASM INC·Filed 2005·Granted Sep 7, 2010·0 cites·13 claims
- 2242US2003129811A1Method of depositing silicon with high step coverageFiled 2003·Application pending·0 cites
- 2341US2006211259A1Silicon oxide cap over high dielectric constant filmsMAES JAN W·Filed 2005·Application pending·0 cites
- 2441US2001020712A1Method of depositing silicon with high step coverageFiled 2001·Application pending·0 cites
- 2535US2004255868A1Plasma etch resistant coating and processFiled 2004·Application pending·0 cites
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