Inventor · disambiguated record
Edmund K. Banghart
Also filed as: BANGHART EDMUND K · BANGHART EDMUND KENNETH
16 granted patents·2 pending applications·215 citations·filing 1992–2020
92Inventor score
Top patents by PatentIndex Score
18 records- 0194US9087860B1Fabricating fin-type field effect transistor with punch-through stop regionGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 21, 2015·23 cites·20 claims
- 0292US5227313AProcess for making backside illuminated image sensorsEASTMAN KODAK CO·Filed 1992·Granted Jul 13, 1993·134 cites·7 claims
- 0387US10522679B2Selective shallow trench isolation (STI) fill for stress engineering in semiconductor structuresGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 31, 2019·6 cites·20 claims
- 0485US9583625B2Fin structures and multi-Vt scheme based on tapered fin and method to formGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 28, 2017·4 cites·8 claims
- 0578US8329499B2Method of forming lateral overflow drain and channel stop regions in image sensorsBANGHART EDMUND K·Filed 2009·Granted Dec 11, 2012·4 cites·20 claims
- 0673US9679990B2Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 13, 2017·2 cites·13 claims
- 0765US8994139B2Lateral overflow drain and channel stop regions in image sensorsBANGHART EDMUND K·Filed 2012·Granted Mar 31, 2015·0 cites·10 claims
- 0862US8772891B2Lateral overflow drain and channel stop regions in image sensorsBANGHART EDMUND K·Filed 2009·Granted Jul 8, 2014·0 cites·10 claims
- 0962US6624453B2Lateral overflow drain, anti-blooming structure for CCD devices having improved breakdown voltageEASTMAN KODAK CO·Filed 2001·Granted Sep 23, 2003·9 cites·12 claims
- 1062US5804465ACompact isolation and antiblooming structure for full-frame CCD image sensors operated in the accumulation modeEASTMAN KODAK CO·Filed 1997·Granted Sep 8, 1998·23 cites·6 claims
- 1155US10347740B2Fin structures and multi-Vt scheme based on tapered fin and method to formGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 9, 2019·0 cites·5 claims
- 1251US11538815B2Non-volatile memory cell arrays with a sectioned active region and methods of manufacturing thereofGLOBALFOUNDRIES US INC·Filed 2020·Granted Dec 27, 2022·0 cites·20 claims
- 1349US11094805B2Lateral heterojunction bipolar transistors with asymmetric junctionsGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 17, 2021·0 cites·20 claims
- 1449US2017222054A1Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabricationGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 1542US2021091222A1Fin structures of finfet devicesGLOBALFOUNDRIES US INC·Filed 2019·Application pending·0 cites
- 1640US5714776ACompact isolation and antiblooming structure for full-frame CCD image sensors operated in the accumlation modeEASTMAN KODAK CO·Filed 1995·Granted Feb 3, 1998·7 cites·14 claims
- 1738US9570291B2Semiconductor substrates and methods for processing semiconductor substratesGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 14, 2017·0 cites·14 claims
- 1830US5448089ACharge-coupled device having an improved charge-transfer efficiency over a broad temperature rangeEASTMAN KODAK CO·Filed 1994·Granted Sep 5, 1995·3 cites·19 claims
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