Inventor · disambiguated record
Yong-Kuk Jeong
Also filed as: JEONG YONG-KUK
33 granted patents·12 pending applications·270 citations·filing 2001–2013
97Inventor score
Top patents by PatentIndex Score
45 records- 0195US7002788B2Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 21, 2006·27 cites·7 claims
- 0291US7288453B2Method of fabricating analog capacitor using post-treatment techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 30, 2007·17 cites·11 claims
- 0391US7125767B2Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 24, 2006·15 cites·19 claims
- 0488US7091548B2Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 15, 2006·35 cites·19 claims
- 0588US6667209B2Methods for forming semiconductor device capacitors that include an adhesive spacer that ensures stable operationSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 23, 2003·46 cites·20 claims
- 0681US8361852B2Methods of manufacturing CMOS transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 29, 2013·6 cites·20 claims
- 0780US7867867B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 11, 2011·7 cites·36 claims
- 0879US7316961B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 8, 2008·6 cites·28 claims
- 0978US7508649B2Multi-layered dielectric film of microelectronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 24, 2009·7 cites·14 claims
- 1078US6815221B2Method for manufacturing capacitor of semiconductor memory device controlling thermal budgetSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 9, 2004·23 cites·67 claims
- 1177US7297591B2Method for manufacturing capacitor of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 20, 2007·18 cites·14 claims
- 1275US7435654B2Analog capacitor having at least three high-k dielectric layers, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 14, 2008·4 cites·18 claims
- 1374US7863201B2Methods of forming field effect transistors having silicided source/drain contacts with low contact resistanceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 4, 2011·4 cites·12 claims
- 1473US7868421B2Analog capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 11, 2011·4 cites·16 claims
- 1570US7476922B2Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 13, 2009·16 cites·7 claims
- 1669US8648408B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 11, 2014·2 cites·20 claims
- 1766US8237202B2Semiconductor devices including dehydrogenated interlayer dielectric layersJEONG YONG-KUK·Filed 2011·Granted Aug 7, 2012·2 cites·17 claims
- 1864US7732296B2Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the methodSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 8, 2010·4 cites·19 claims
- 1963US7294546B2Capacitor for a semiconductor device and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 13, 2007·2 cites·9 claims
- 2062US7679124B2Analog capacitor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 16, 2010·1 cites·4 claims
- 2161US7407897B2Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 5, 2008·2 cites·9 claims
- 2261US7008837B2Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 7, 2006·7 cites·26 claims
- 2358US8790972B2Methods of forming CMOS transistors using tensile stress layers and hydrogen plasma treatmentJEONG YONG-KUK·Filed 2010·Granted Jul 29, 2014·2 cites·17 claims
- 2458US7709927B2Shallow trench isolation structures for semiconductor devices including wet etch barriersSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 4, 2010·1 cites·11 claims
- 2557US6884673B2Methods of forming integrated circuit devices having metal-insulator-metal (MIM) capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 26, 2005·6 cites·15 claims
- 2654US8951853B1Method of forming semiconductor device using Si-H rich silicon nitride layerPARK PAN-KWI·Filed 2010·Granted Feb 10, 2015·1 cites·18 claims
- 2754US7833580B2Method of forming a carbon nano-material layer using a cyclic deposition techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 16, 2010·1 cites·31 claims
- 2854US7608519B2Method of fabricating trench isolation of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 27, 2009·0 cites·29 claims
- 2952US7199003B2Method of manufacturing capacitor of semiconductor device by simplifying process of forming dielectric layer and apparatus thereforSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 3, 2007·3 cites·18 claims
- 3051US2006078678A1Method of forming a thin film by atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3150US7888749B2Semiconductor devices having selectively tensile stressed gate electrodes and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 15, 2011·0 cites·20 claims
- 3250US2007169697A1Method of manufacturing capacitor of semiconductor device by simplifying process of forming dielectric layer and apparatus thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3349US2007178644A1Semiconductor device having an insulating layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3448US2006124987A1Capacitor of semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3547US2010197124A1Methods of Forming Semiconductor Devices Using Plasma Dehydrogenation and Devices Formed TherebySAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 3645US6649502B2Methods of forming multilayer dielectric regions using varied deposition parametersSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 18, 2003·1 cites·44 claims
- 3744US7808043B2Semiconductor device and methods of fabricating the same including forming spacers and etch stop layers with stress propertiesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 5, 2010·0 cites·24 claims
- 3844US2005161727A1Integrated circuit devices having a metal-insulator-metal (MIM) capacitorFiled 2005·Application pending·0 cites
- 3944US2005173778A1Analog capacitor and method of fabricating the sameFiled 2005·Application pending·0 cites
- 4043US7166541B2Method of forming dielectric layer using plasma enhanced atomic layer deposition techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 23, 2007·0 cites·15 claims
- 4140US2004175905A1Method of forming thin film using atomic layer depositionFiled 2004·Application pending·0 cites
- 4240US2007059898A1Semiconductor devices including trench isolation structures and methods of forming the sameSHIN DONG-SUK·Filed 2006·Application pending·0 cites
- 4339US2006006449A1Semiconductor integrated circuit devices having a hybrid dielectric layer and methods of fabricating the sameJEONG YONG-KUK·Filed 2005·Application pending·0 cites
- 4438US2004084709A1Capacitor for a semiconductor device and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Application pending·0 cites
- 4534US2011306198A1Method of fabricating semiconductor integrated circuit deviceJEONG YONG-KUK·Filed 2011·Application pending·0 cites
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