Inventor · disambiguated record
Martin Vielemeyer
Also filed as: VIELEMEYER MARTIN · VIELEMEYER MARTIN HENNING · VIELEMEYER MARTIN HENNING ALBRECHT
39 granted patents·3 pending applications·211 citations·filing 2009–2022
96Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG23INFINEON TECHNOLOGIES AG9INFINEON TECHNOLOGIES AUSTRIA6HAEBERLEN OLIVER2SIEMIENIEC RALF1
Top patents by PatentIndex Score
42 records- 0198US8350273B2Semiconductor structure and a method of forming the sameINFINEON TECHNOLOGIES AG·Filed 2009·Granted Jan 8, 2013·125 cites·23 claims
- 0293US8193559B2Monolithic semiconductor switches and method for manufacturingHAEBERLEN OLIVER·Filed 2011·Granted Jun 5, 2012·26 cites·17 claims
- 0390US9812535B1Method for manufacturing a semiconductor device and power semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Nov 7, 2017·7 cites·16 claims
- 0488US9543386B2Semiconductor device with field electrode structures, gate structures and auxiliary diode structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jan 10, 2017·5 cites·28 claims
- 0588US9252263B1Multiple semiconductor device trenches per cell pitchINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Feb 2, 2016·9 cites·26 claims
- 0685US9443973B2Semiconductor device with charge compensation region underneath gate trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Sep 13, 2016·6 cites·9 claims
- 0783US9735243B2Semiconductor device, integrated circuit and method of forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 15, 2017·5 cites·16 claims
- 0882US10438945B2Method of manufacturing a semiconductor dieINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Oct 8, 2019·3 cites·15 claims
- 0982US9502401B2Integrated circuit with first and second switching devices, half bridge circuit and method of manufacturingINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Nov 22, 2016·4 cites·15 claims
- 1080US9356141B2Semiconductor device having peripheral trench structuresINFINEON TECHNOLOGIES AG·Filed 2014·Granted May 31, 2016·4 cites·17 claims
- 1179US8088660B1Method for producing a plug in a semiconductor bodySIEMIENIEC RALF·Filed 2010·Granted Jan 3, 2012·5 cites·21 claims
- 1278US9306058B2Integrated circuit and method of manufacturing an integrated circuitINFINEON TECHNOLOGIES AG·Filed 2013·Granted Apr 5, 2016·3 cites·7 claims
- 1378US8779440B2Semiconductor structure and a method of forming the sameINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jul 15, 2014·3 cites·20 claims
- 1472US9171738B2Systems and methods for integrating bootstrap circuit elements in power transistors and other devicesINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Oct 27, 2015·2 cites·20 claims
- 1571US11133391B2Transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Sep 28, 2021·1 cites·21 claims
- 1667US8946767B2Monolithic semiconductor switches and method for manufacturingHAEBERLEN OLIVER·Filed 2012·Granted Feb 3, 2015·2 cites·4 claims
- 1766US12119400B2Semiconductor transistor device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Oct 15, 2024·0 cites·10 claims
- 1859US11316043B2Semiconductor transistor device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Apr 26, 2022·0 cites·14 claims
- 1959US9431392B2Electronic circuit having adjustable transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Aug 30, 2016·1 cites·20 claims
- 2057US10263086B2Semiconductor device with first and second field electrode structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 16, 2019·0 cites·18 claims
- 2155US9799729B2Method of manufacturing a semiconductor device with field electrode structures, gate structures and auxiliary diode structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Oct 24, 2017·0 cites·20 claims
- 2255US9048091B2Method and substrate for thick III-N epitaxyINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Jun 2, 2015·0 cites·15 claims
- 2354US10236352B2Method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Mar 19, 2019·0 cites·28 claims
- 2453US9899488B2Semiconductor device having a trench with different electrode materialsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Feb 20, 2018·0 cites·6 claims
- 2553US9324802B2Spacer supported lateral channel FETINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Apr 26, 2016·0 cites·10 claims
- 2652US10439030B2Semiconductor device having a channel region patterned into a ridge by adjacent gate trenchesINFINEON TECHNOLOGIES AG·Filed 2017·Granted Oct 8, 2019·0 cites·20 claims
- 2752US9917160B2Semiconductor device having a polycrystalline silicon IGFETINFINEON TECHNOLOGIES AG·Filed 2016·Granted Mar 13, 2018·0 cites·11 claims
- 2852US9842901B2Semiconductor device with first and second field electrode structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Dec 12, 2017·0 cites·22 claims
- 2952US9735141B2Compound semiconductor transistor with gate overvoltage protectionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Aug 15, 2017·0 cites·23 claims
- 3052US9530773B2Systems and methods for integrating bootstrap circuit elements in power transistors and other devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Dec 27, 2016·0 cites·19 claims
- 3152US9525044B2Method of manufacturing a spacer supported lateral channel FETINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Dec 20, 2016·0 cites·14 claims
- 3250US10355087B2Semiconductor device including a transistor with a gate dielectric having a variable thicknessINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jul 16, 2019·0 cites·10 claims
- 3350US9590062B2Insulating block in a semiconductor trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Mar 7, 2017·0 cites·10 claims
- 3449US10199456B2Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Feb 5, 2019·0 cites·12 claims
- 3549US2017047324A1Method of Manufacturing an Integrated CircuitINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
- 3647US8946902B2Device and method for manufacturing a deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Feb 3, 2015·0 cites·19 claims
- 3746US12315835B2Pre-packaged chip, method of manufacturing a pre-packaged chip, semiconductor package and method of manufacturing a semiconductor packageINFINEON TECHNOLOGIES AG·Filed 2022·Granted May 27, 2025·0 cites·11 claims
- 3846US9799643B2Gate voltage control for III-nitride transistorsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Oct 24, 2017·0 cites·15 claims
- 3946US2015236102A1Semiconductor wafer structure having si material and iii-n material on the (111) surface of the si materialINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Application pending·0 cites
- 4042US9276097B2Gate overvoltage protection for compound semiconductor transistorsVIELEMEYER MARTIN·Filed 2012·Granted Mar 1, 2016·0 cites·22 claims
- 4141US9978862B2Power transistor with at least partially integrated driver stageINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted May 22, 2018·0 cites·24 claims
- 4238US2017092777A1Semiconductor Device and MethodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →