Inventor · disambiguated record
Berinder Brar
Also filed as: BRAR BERINDER · BRAR BERINDER P S
35 granted patents·6 pending applications·743 citations·filing 1998–2024
98Inventor score
Files withFLEXTRONICS INT USA INC8COLDWATT INC5ROCKWELL SCIENT LICENSING LLC5TELEDYNE LICENSING LLC5BOEING CO3
Top patents by PatentIndex Score
41 records- 0197US7339208B2Semiconductor device having multiple lateral channels and method of forming the sameCOLDWATT INC·Filed 2005·Granted Mar 4, 2008·76 cites·20 claims
- 0297US7285807B2Semiconductor device having substrate-driven field-effect transistor and Schottky diode and method of forming the sameCOLDWATT INC·Filed 2005·Granted Oct 23, 2007·55 cites·20 claims
- 0396US7663183B2Vertical field-effect transistor and method of forming the sameFLEXTRONICS INT USA INC·Filed 2007·Granted Feb 16, 2010·55 cites·30 claims
- 0496US7655963B2Semiconductor device including a lateral field-effect transistor and Schottky diodeFLEXTRONICS INT USA INC·Filed 2007·Granted Feb 2, 2010·36 cites·20 claims
- 0595US7462891B2Semiconductor device having an interconnect with sloped walls and method of forming the sameCOLDWATT INC·Filed 2005·Granted Dec 9, 2008·48 cites·20 claims
- 0695US7439557B2Semiconductor device having a lateral channel and contacts on opposing surfaces thereofCOLDWATT INC·Filed 2005·Granted Oct 21, 2008·32 cites·44 claims
- 0795US6255150B1Use of crystalline SiOx barriers for Si-based resonant tunneling diodesTEXAS INSTRUMENTS INC·Filed 1998·Granted Jul 3, 2001·141 cites·12 claims
- 0894US7439556B2Substrate driven field-effect transistorCOLDWATT INC·Filed 2005·Granted Oct 21, 2008·32 cites·20 claims
- 0993US7541640B2Vertical field-effect transistor and method of forming the sameFLEXTRONICS INT USA INC·Filed 2007·Granted Jun 2, 2009·27 cites·30 claims
- 1092US7504673B2Semiconductor device including a lateral field-effect transistor and Schottky diodeFLEXTRONICS INT USA INC·Filed 2007·Granted Mar 17, 2009·16 cites·20 claims
- 1191US7339209B2Integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diodeBOEING CO·Filed 2005·Granted Mar 4, 2008·17 cites·14 claims
- 1287US7838905B2Semiconductor device having multiple lateral channels and method of forming the sameFLEXTRONICS INT USA INC·Filed 2008·Granted Nov 23, 2010·11 cites·40 claims
- 1387US7675090B2Semiconductor device having a contact on a buffer layer thereof and method of forming the sameFLEXTRONICS INT USA INC·Filed 2007·Granted Mar 9, 2010·11 cites·20 claims
- 1487US7564074B2Semiconductor device including a lateral field-effect transistor and Schottky diodeFLEXTRONICS INT USA INC·Filed 2007·Granted Jul 21, 2009·14 cites·20 claims
- 1587US7563713B2Semiconductor devices having plated contacts, and methods of manufacturing the sameTELEDYNE SCIENT & IMAGING LLC·Filed 2005·Granted Jul 21, 2009·19 cites·37 claims
- 1686US7642568B2Semiconductor device having substrate-driven field-effect transistor and Schottky diode and method of forming the sameFLEXTRONICS INT USA INC·Filed 2007·Granted Jan 5, 2010·9 cites·30 claims
- 1782US8415737B2Semiconductor device with a pillar region and method of forming the sameBRAR BERINDER P S·Filed 2007·Granted Apr 9, 2013·13 cites·30 claims
- 1878US6605825B1Bipolar transistor characterization apparatus with lateral test probe padsINNOVATIVE TECH LICENSING LLC·Filed 2002·Granted Aug 12, 2003·17 cites·22 claims
- 1975US6958491B1Bipolar transistor test structure with lateral test probe padsROCKWELL SCIENT LICENSING LLC·Filed 2003·Granted Oct 25, 2005·14 cites·15 claims
- 2074US7989842B2Method and apparatus for heterojunction barrier diode detector for ultrahigh sensitivityTELEDYNE SCIENT & IMAGING LLC·Filed 2009·Granted Aug 2, 2011·3 cites·22 claims
- 2171US6949776B2Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricatingROCKWELL SCIENT LICENSING LLC·Filed 2002·Granted Sep 27, 2005·14 cites·25 claims
- 2271US6858887B1BJT device configuration and fabrication method with reduced emitter widthINNOVATIVE TECH LICENSING LLC·Filed 2003·Granted Feb 22, 2005·16 cites·18 claims
- 2371US6800531B2Method of fabricating a bipolar transistorROCKWELL SCIENT LICENSING LLC·Filed 2003·Granted Oct 5, 2004·14 cites·6 claims
- 2471US6797995B2Heterojunction bipolar transistor with InGaAs contact and etch stop layer for InP sub-collectorROCKWELL SCIENT LICENSING LLC·Filed 2002·Granted Sep 28, 2004·14 cites·28 claims
- 2568US6706574B2Field effect transistor and method for making the sameRAYTHEON CO·Filed 2002·Granted Mar 16, 2004·11 cites·4 claims
- 2662US8043910B2Integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diodeBOEING CO·Filed 2010·Granted Oct 25, 2011·1 cites·17 claims
- 2760US7755106B2Integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diodeBOEING CO·Filed 2008·Granted Jul 13, 2010·1 cites·7 claims
- 2860US2024379834A1Recessed-gate high-electron-mobility transistors with doped barriers and round gate foot cornersTELEDYNE SCIENT & IMAGING LLC·Filed 2024·Application pending·0 cites
- 2959US6414340B1Field effect transistor and method for making the sameRAYTHEON CO·Filed 1999·Granted Jul 2, 2002·15 cites·15 claims
- 3058US7518165B2Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTsTELEDYNE LICENSING LLC·Filed 2006·Granted Apr 14, 2009·1 cites·12 claims
- 3155US7808016B2Heterogeneous integration of low noise amplifiers with power amplifiers or switchesTELEDYNE LICENSING LLC·Filed 2006·Granted Oct 5, 2010·1 cites·19 claims
- 3253US6870184B2Mechanically-stable BJT with reduced base-collector capacitanceINNOVATIVE TECH LICENSING LLC·Filed 2003·Granted Mar 22, 2005·5 cites·21 claims
- 3350US7820541B2Process for forming low defect density heterojunctionsTELEDYNE LICENSING LLC·Filed 2006·Granted Oct 26, 2010·0 cites·18 claims
- 3450US6815237B1Testing apparatus and method for determining an etch bias associated with a semiconductor-processing stepROCKWELL SCIENT LICENSING LLC·Filed 2003·Granted Nov 9, 2004·2 cites·4 claims
- 3546US7354820B2Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricatingTELEDYNE LICENSING LLC·Filed 2005·Granted Apr 8, 2008·0 cites·7 claims
- 3646US2011220967A1Process for forming low defect density heterojunctionsTELEDYNE LICENSING LLC·Filed 2011·Application pending·0 cites
- 3743US2007145417A1High voltage semiconductor device having a lateral channel and enhanced gate-to-drain separationBRAR BERINDER P S·Filed 2007·Application pending·0 cites
- 3843US2011031531A1Process for forming low defect density heterojunctionsSULLIVAN GERARD J·Filed 2010·Application pending·0 cites
- 3941US2011143518A1Heterogeneous integration of low noise amplifiers with power amplifiers or switchesBRAR BERINDER·Filed 2011·Application pending·0 cites
- 4041US2011018034A1Heterogeneous integration of low noise amplifiers with power amplifiers or switchesBRAR BERINDER·Filed 2010·Application pending·0 cites
- 4132US7030038B1Low temperature method for forming a thin, uniform oxideTEXAS INSTRUMENTS INC·Filed 1998·Granted Apr 18, 2006·2 cites·25 claims
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