Inventor
FAUL JUERGEN
DE38 patents
⚠️ This page may combine multiple inventors who share the name “FAUL JUERGEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
20 patentsUS9837439B1Dec 5, 2017
Compensation of temperature effects in semiconductor device structures
GLOBALFOUNDRIES INC8 citations84
US9299616B1Mar 29, 2016
Integrated circuits with separate workfunction material layers and methods for fabricating the same
GLOBALFOUNDRIES INC10 citations84
US8823149B2Sep 2, 2014
Contact landing pads for a semiconductor device and methods of making same
GLOBALFOUNDRIES INC6 citations84
US10026753B2Jul 17, 2018
Method for compensating for temperature effects in semiconductor device structures using a diode structure and a tunable resistor
GLOBALFOUNDRIES INC2 citations73
US9905707B1Feb 27, 2018
MOS capacitive structure of reduced capacitance variability
GLOBALFOUNDRIES INC6 citations69
US8956928B2Feb 17, 2015
Contact structure for a semiconductor device and methods of making same
GLOBALFOUNDRIES INC3 citations63
US10535674B2Jan 14, 2020
Method of forming a semiconductor device structure and semiconductor device structure
GLOBALFOUNDRIES INC0 citations52
US10466126B2Nov 5, 2019
MEMS capacitive pressure sensors in fully depleted semiconductor on insulator (FDSOI)
GLOBALFOUNDRIES INC0 citations52
US10224342B2Mar 5, 2019
Tunable capacitor for FDSOI applications
GLOBALFOUNDRIES INC0 citations52
US10032891B2Jul 24, 2018
FinFET based flash memory cell
GLOBALFOUNDRIES INC1 citations52
US9748270B2Aug 29, 2017
Tunable capacitor for FDSOI applications
GLOBALFOUNDRIES INC1 citations52
US9748259B1Aug 29, 2017
Method of forming a semiconductor device structure and semiconductor device structure
GLOBALFOUNDRIES INC0 citations52
US9666589B1May 30, 2017
FinFET based flash memory cell
GLOBALFOUNDRIES INC1 citations52
US9177803B2Nov 3, 2015
HK/MG process flows for P-type semiconductor devices
GLOBALFOUNDRIES INC1 citations52
US9064733B2Jun 23, 2015
Contact structure for a semiconductor device and methods of making same
GLOBALFOUNDRIES INC1 citations52
US8962414B1Feb 24, 2015
Reduced spacer thickness in semiconductor device fabrication
GLOBALFOUNDRIES INC1 citations52
US8951920B2Feb 10, 2015
Contact landing pads for a semiconductor device and methods of making same
GLOBALFOUNDRIES INC0 citations52
US9093526B2Jul 28, 2015
Methods of forming a sidewall spacer having a generally triangular shape and a semiconductor device having such a spacer
GLOBALFOUNDRIES INC0 citations50
US9876111B2Jan 23, 2018
Method of forming a semiconductor device structure using differing spacer widths and the resulting semiconductor device structure
GLOBALFOUNDRIES INC0 citations36
US9917087B2Mar 13, 2018
Integrated circuits with a partially-depleted region formed over a bulk silicon substrate and methods for fabricating the same
GLOBALFOUNDRIES INC0 citations34
INFINEON TECHNOLOGIES AG
7 patentsUS7078325B2Jul 18, 2006
Process for producing a doped semiconductor substrate
INFINEON TECHNOLOGIES AG135 citations97
US6943116B2Sep 13, 2005
Method for fabricating a p-channel field-effect transistor on a semiconductor substrate
INFINEON TECHNOLOGIES AG12 citations84
US6664167B2Dec 16, 2003
Memory with trench capacitor and selection transistor and method for fabricating it
INFINEON TECHNOLOGIES AG9 citations72
US6326262B1Dec 4, 2001
Method for fabricating epitaxy layer
INFINEON TECHNOLOGIES AG8 citations72
US7259060B2Aug 21, 2007
Method for fabricating a semiconductor structure
INFINEON TECHNOLOGIES AG3 citations62
US6967133B2Nov 22, 2005
Method for fabricating a semiconductor structure
INFINEON TECHNOLOGIES AG4 citations62
US12176339B2Dec 24, 2024
Electronic device and charge pump circuit
INFINEON TECHNOLOGIES AG0 citations57
IBM
3 patentsSIEMENS AG
3 patentsUS6174741B1Jan 16, 2001
Method for quantifying proximity effect by measuring device performance
SIEMENS AG32 citations92
US6828191B1Dec 7, 2004
Trench capacitor with an insulation collar and method for producing a trench capacitor
SIEMENS AG53 citations90
US6509599B1Jan 21, 2003
Trench capacitor with insulation collar and method for producing the trench capacitor
SIEMENS AG41 citations90