P

Inventor

FAUL JUERGEN

DE38 patents
⚠️ This page may combine multiple inventors who share the name “FAUL JUERGEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

20 patents
US9837439B1Dec 5, 2017

Compensation of temperature effects in semiconductor device structures

GLOBALFOUNDRIES INC8 citations84
US9299616B1Mar 29, 2016

Integrated circuits with separate workfunction material layers and methods for fabricating the same

GLOBALFOUNDRIES INC10 citations84
US8823149B2Sep 2, 2014

Contact landing pads for a semiconductor device and methods of making same

GLOBALFOUNDRIES INC6 citations84
US10026753B2Jul 17, 2018

Method for compensating for temperature effects in semiconductor device structures using a diode structure and a tunable resistor

GLOBALFOUNDRIES INC2 citations73
US9905707B1Feb 27, 2018

MOS capacitive structure of reduced capacitance variability

GLOBALFOUNDRIES INC6 citations69
US8956928B2Feb 17, 2015

Contact structure for a semiconductor device and methods of making same

GLOBALFOUNDRIES INC3 citations63
US10535674B2Jan 14, 2020

Method of forming a semiconductor device structure and semiconductor device structure

GLOBALFOUNDRIES INC0 citations52
US10466126B2Nov 5, 2019

MEMS capacitive pressure sensors in fully depleted semiconductor on insulator (FDSOI)

GLOBALFOUNDRIES INC0 citations52
US10224342B2Mar 5, 2019

Tunable capacitor for FDSOI applications

GLOBALFOUNDRIES INC0 citations52
US10032891B2Jul 24, 2018

FinFET based flash memory cell

GLOBALFOUNDRIES INC1 citations52
US9748270B2Aug 29, 2017

Tunable capacitor for FDSOI applications

GLOBALFOUNDRIES INC1 citations52
US9748259B1Aug 29, 2017

Method of forming a semiconductor device structure and semiconductor device structure

GLOBALFOUNDRIES INC0 citations52
US9666589B1May 30, 2017

FinFET based flash memory cell

GLOBALFOUNDRIES INC1 citations52
US9177803B2Nov 3, 2015

HK/MG process flows for P-type semiconductor devices

GLOBALFOUNDRIES INC1 citations52
US9064733B2Jun 23, 2015

Contact structure for a semiconductor device and methods of making same

GLOBALFOUNDRIES INC1 citations52
US8962414B1Feb 24, 2015

Reduced spacer thickness in semiconductor device fabrication

GLOBALFOUNDRIES INC1 citations52
US8951920B2Feb 10, 2015

Contact landing pads for a semiconductor device and methods of making same

GLOBALFOUNDRIES INC0 citations52
US9093526B2Jul 28, 2015

Methods of forming a sidewall spacer having a generally triangular shape and a semiconductor device having such a spacer

GLOBALFOUNDRIES INC0 citations50
US9876111B2Jan 23, 2018

Method of forming a semiconductor device structure using differing spacer widths and the resulting semiconductor device structure

GLOBALFOUNDRIES INC0 citations36
US9917087B2Mar 13, 2018

Integrated circuits with a partially-depleted region formed over a bulk silicon substrate and methods for fabricating the same

GLOBALFOUNDRIES INC0 citations34

INFINEON TECHNOLOGIES AG

7 patents

IBM

3 patents

SIEMENS AG

3 patents

QIMONDA AG

2 patents

FAUL JUERGEN

1 patent

INFINEON TECH DRESDEN GMBH & CO KG

1 patent

GERHARDT MARTIN

1 patent