Inventor · disambiguated record
Hidekazu Goto
Also filed as: GOTO HIDEKAZU
17 granted patents·8 pending applications·396 citations·filing 1991–2023
95Inventor score
Files withHITACHI LTD13MITSUI MINING & SMELTING CO LTD5ELPIDA MEMORY INC1MICRON TECHNOLOGY INC1UNIV OSAKA1
Top patents by PatentIndex Score
25 records- 0193US6028360ASemiconductor integrated circuit device in which a conductive film is formed over a trap film which in turn is formed over a titanium filmHITACHI LTD·Filed 1998·Granted Feb 22, 2000·101 cites·2 claims
- 0288US6215144B1Semiconductor integrated circuit device, and method of manufacturing the sameHITACHI LTD·Filed 1999·Granted Apr 10, 2001·73 cites·19 claims
- 0387US6399438B2Method of manufacturing semiconductor integrated circuit device having a capacitorHITACHI LTD·Filed 2001·Granted Jun 4, 2002·32 cites·17 claims
- 0479US5175017AMethod of forming metal or metal silicide filmHITACHI LTD·Filed 1991·Granted Dec 29, 1992·43 cites·57 claims
- 0576US6329681B1Semiconductor integrated circuit device and method of manufacturing the sameFiled 1998·Granted Dec 11, 2001·38 cites·18 claims
- 0675US6605530B2Method for fabricating semiconductor integrated circuitHITACHI LTD·Filed 2002·Granted Aug 12, 2003·14 cites·24 claims
- 0775US5177589ARefractory metal thin film having a particular step coverage factor and ratio of surface roughnessHITACHI LTD·Filed 1991·Granted Jan 5, 1993·54 cites·8 claims
- 0871US6853081B2Method for fabricating semiconductor integrated circuitHITACHI LTD·Filed 2003·Granted Feb 8, 2005·11 cites·18 claims
- 0968US6638811B2Method of manufacturing a semiconductor integrated circuit device having a capacitorHITACHI LTD·Filed 2002·Granted Oct 28, 2003·9 cites·8 claims
- 1065US6686619B2Dynamic random access memory with improved contact arrangementsHITACHI LTD·Filed 2002·Granted Feb 3, 2004·7 cites·4 claims
- 1164US2024190881A1Pyrrolidine derivative, production method therefor, mse-type zeolite, and production method thereforMITSUI MINING & SMELTING CO LTD·Filed 2022·Application pending·0 cites
- 1263US2024367145A1Exhaust gas cleaning catalyst and production method thereforMITSUI MINING & SMELTING CO LTD·Filed 2022·Application pending·0 cites
- 1361US12330134B2Hydrocarbon adsorbentMITSUI MINING & SMELTING CO LTD·Filed 2021·Granted Jun 17, 2025·0 cites·17 claims
- 1461US8374827B2Numerical simulation apparatus for time dependent schrödinger equationUNIV OSAKA·Filed 2007·Granted Feb 12, 2013·2 cites·6 claims
- 1559US2024170327A1Semiconductor device including hydrogen introduction layer provided on semiconductor substrate and method of forming the sameMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 1656US6492730B1Method for fabricating semiconductor integrated circuitHITACHI LTD·Filed 2000·Granted Dec 10, 2002·4 cites·10 claims
- 1754US12330133B2Exhaust gas purifying composition and production method thereforMITSUI MINING & SMELTING CO LTD·Filed 2020·Granted Jun 17, 2025·0 cites·9 claims
- 1853US2023271136A1Hydrocarbon adsorption material, exhaust gas cleaning catalyst, and exhaust gas cleaning systemMITSUI MINING & SMELTING CO LTD·Filed 2021·Application pending·0 cites
- 1952US7183170B2Manufacturing method of semiconductor deviceELPIDA MEMORY INC·Filed 2004·Granted Feb 27, 2007·3 cites·21 claims
- 2050US7224016B2Memory with memory cells that include a MIM type capacitor with a lower electrode made for reduced resistance at an interface with a metal filmHITACHI LTD·Filed 2004·Granted May 29, 2007·3 cites·12 claims
- 2150US7119443B2Semiconductor integrated circuit device having a conductive film which contains metal atoms bondable to a halogen elementHITACHI LTD·Filed 2004·Granted Oct 10, 2006·2 cites·5 claims
- 2248US2007148896A1Memory with memory cells that include a mim type capacitor with a lower electrode made for reduced resistance at an interface with a metal filmHITACHI LTD·Filed 2006·Application pending·0 cites
- 2344US2005183963A1Electrode for electrolytic processingFiled 2005·Application pending·0 cites
- 2442US2003211673A1Dynamic random access memory with improved contact arrangementsFiled 2003·Application pending·0 cites
- 2540US2002047153A1Semiconductor integrated circuit device and method of manufacturing the sameFiled 2001·Application pending·0 cites
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