Inventor
CHEN HSIN-MING
TW87 patents
⚠️ This page may combine multiple inventors who share the name “CHEN HSIN-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
EMEMORY TECHNOLOGY INC
28 patentsUS9613714B1Apr 4, 2017
One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method
EMEMORY TECHNOLOGY INC101 citations99
US9935113B2Apr 3, 2018
Non-volatile memory and method for programming and reading a memory array having the same
EMEMORY TECHNOLOGY INC61 citations98
US7903472B2Mar 8, 2011
Operating method of non-volatile memory
EMEMORY TECHNOLOGY INC40 citations96
US7262457B2Aug 28, 2007
Non-volatile memory cell
EMEMORY TECHNOLOGY INC33 citations92
US7250654B2Jul 31, 2007
Non-volatile memory device
EMEMORY TECHNOLOGY INC48 citations92
US7209392B2Apr 24, 2007
Single poly non-volatile memory
EMEMORY TECHNOLOGY INC40 citations92
US7172940B1Feb 6, 2007
Method of fabricating an embedded non-volatile memory device
EMEMORY TECHNOLOGY INC39 citations92
US6812083B2Nov 2, 2004
Fabrication method for non-volatile memory
EMEMORY TECHNOLOGY INC25 citations92
US10649735B2May 12, 2020
Security system with entropy bits
EMEMORY TECHNOLOGY INC11 citations86
US10915464B2Feb 9, 2021
Security system using random number bit string
EMEMORY TECHNOLOGY INC8 citations84
US10691414B2Jun 23, 2020
Random code generator and associated random code generating method
EMEMORY TECHNOLOGY INC4 citations84
US10177924B1Jan 8, 2019
Physically unclonable function unit with one single anti-fuse transistor
EMEMORY TECHNOLOGY INC8 citations84
US9620176B2Apr 11, 2017
One-time programmable memory array having small chip area
EMEMORY TECHNOLOGY INC13 citations84
US9324381B2Apr 26, 2016
Antifuse OTP memory cell with performance improvement, and manufacturing method and operating method of memory
EMEMORY TECHNOLOGY INC8 citations84
US9281074B2Mar 8, 2016
One time programmable memory cell capable of reducing leakage current and preventing slow bit response
EMEMORY TECHNOLOGY INC13 citations84
US8384155B2Feb 26, 2013
Semiconductor capacitor
EMEMORY TECHNOLOGY INC8 citations84
US8344445B2Jan 1, 2013
Non-volatile semiconductor memory cell with dual functions
EMEMORY TECHNOLOGY INC18 citations84
US7706114B2Apr 27, 2010
ESD avoiding circuits based on the ESD detectors in a feedback loop
EMEMORY TECHNOLOGY INC12 citations84
US7660087B2Feb 9, 2010
Electrostatic discharge avoiding circuit
EMEMORY TECHNOLOGY INC17 citations84
US7447082B2Nov 4, 2008
Method for operating single-poly non-volatile memory device
EMEMORY TECHNOLOGY INC10 citations84
US7190623B2Mar 13, 2007
Non-volatile memory cell and method of operating the same
EMEMORY TECHNOLOGY INC16 citations84
US6922363B2Jul 26, 2005
Method for operating a NOR-array memory module composed of P-type memory cells
EMEMORY TECHNOLOGY INC13 citations84
US6822286B2Nov 23, 2004
Cmos-compatible read only memory and method for fabricating the same
EMEMORY TECHNOLOGY INC18 citations84
US9013910B2Apr 21, 2015
Antifuse OTP memory cell with performance improvement prevention and operating method of memory
EMEMORY TECHNOLOGY INC11 citations81
US7417897B2Aug 26, 2008
Method for reading a single-poly single-transistor non-volatile memory cell
EMEMORY TECHNOLOGY INC7 citations74
US10122538B2Nov 6, 2018
Antifuse physically unclonable function unit and associated control method
EMEMORY TECHNOLOGY INC3 citations73
US9601499B2Mar 21, 2017
One-time programmable memory cell capable of reducing leakage current and preventing slow bit response, and method for programming a memory array comprising the same
EMEMORY TECHNOLOGY INC6 citations73
US9099392B2Aug 4, 2015
Method of fabricating erasable programmable single-poly nonvolatile memory
EMEMORY TECHNOLOGY INC4 citations73
TAIWAN SEMICONDUCTOR MFG
8 patentsUS6576558B1Jun 10, 2003
High aspect ratio shallow trench using silicon implanted oxide
TAIWAN SEMICONDUCTOR MFG113 citations98
US6586765B2Jul 1, 2003
Wafer-level antenna effect detection pattern for VLSI
TAIWAN SEMICONDUCTOR MFG20 citations93
US6372525B1Apr 16, 2002
Wafer-level antenna effect detection pattern for VLSI
TAIWAN SEMICONDUCTOR MFG21 citations93
US6818936B2Nov 16, 2004
Scaled EEPROM cell by metal-insulator-metal (MIM) coupling
TAIWAN SEMICONDUCTOR MFG26 citations89
US7122857B2Oct 17, 2006
Multi-level (4state/2-bit) stacked gate flash memory cell
TAIWAN SEMICONDUCTOR MFG6 citations74
US6245657B1Jun 12, 2001
Self-aligned, low contact resistance, via fabrication process
TAIWAN SEMICONDUCTOR MFG14 citations74
US6108242AAug 22, 2000
Flash memory with split gate structure and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG10 citations74
US6417046B1Jul 9, 2002
Modified nitride spacer for solving charge retention issue in floating gate memory cell
TAIWAN SEMICONDUCTOR MFG12 citations73
TOPPOLY OPTOELECTRONICS CORP
4 patentsUS6787405B2Sep 7, 2004
Method of fabricating liquid crystal display devices integrated with driving circuit
TOPPOLY OPTOELECTRONICS CORP45 citations93
US6816210B2Nov 9, 2004
Method for forming a self-aligned pixel electrode of an LCD
TOPPOLY OPTOELECTRONICS CORP15 citations84
US6818922B2Nov 16, 2004
Thin film transistor array and driving circuit structure
TOPPOLY OPTOELECTRONICS CORP8 citations74
US6703266B1Mar 9, 2004
Method for fabricating thin film transistor array and driving circuit
TOPPOLY OPTOELECTRONICS CORP11 citations73
LU HAU-YAN
2 patentsUBIQUITI NETWORKS INC
2 patentsHSU TE-HSUN
1 patentCHEN WEI-REN
1 patentTAIWAN SEMICONDUCTOR MANUFACTO
1 patentWU MENG-YI
1 patentAU OPTRONICS CORP
1 patentUBIQUITI INC
1 patentShowing the top 50 of 87 patents by PatentIndex Score.