Inventor · disambiguated record
Tai-Ju Chen
Also filed as: CHEN TAI Y · CHEN TAI-JU
10 granted patents·7 pending applications·234 citations·filing 1996–2022
88Inventor score
Top patents by PatentIndex Score
17 records- 0196US6368941B1Fabrication of a shallow trench isolation by plasma oxidationUNITED MICROELECTRONICS CORP·Filed 2000·Granted Apr 9, 2002·170 cites·13 claims
- 0290US11380777B2Method for forming a high-voltage metal-oxide-semiconductor transistor deviceUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jul 5, 2022·2 cites·8 claims
- 0388US9337339B1Metal oxide semiconductor device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted May 10, 2016·11 cites·10 claims
- 0486US9640663B2High-voltage FinFET device having LDMOS structure and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted May 2, 2017·7 cites·10 claims
- 0583US6489206B2Method for forming self-aligned local-halo metal-oxide-semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2001·Granted Dec 3, 2002·30 cites·3 claims
- 0675US8043919B2Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted Oct 25, 2011·7 cites·18 claims
- 0769US10103248B2Method for manufacturing a high-voltage FinFET device having LDMOS structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Oct 16, 2018·1 cites·11 claims
- 0865US11715784B2Method for forming a high-voltage metal-oxide-semiconductor transistor deviceUNITED MICROELECTRONICS CORP·Filed 2022·Granted Aug 1, 2023·0 cites·10 claims
- 0949US9741830B2Method for forming metal oxide semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 22, 2017·0 cites·11 claims
- 1036US6087276AMethod of making a TFT having an ion plated silicon dioxide capping layerNAT SCIENCE COUNCIL·Filed 1996·Granted Jul 11, 2000·6 cites·4 claims
- 1136US2002137293A1Method for forming self-aligned local-halo metal-oxide-semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2002·Application pending·0 cites
- 1234US2002106865A1Method of forming shallow trench isolationFiled 2001·Application pending·0 cites
- 1334US2002106864A1Method for filling of a shallow trench isolationFiled 2001·Application pending·0 cites
- 1434US2006091478A1Semiconductor gate structure and method for preparing the samePROMOS TECHNOLOGIES INC·Filed 2004·Application pending·0 cites
- 1533US2002155700A1Method of forming a damascene structureFiled 2001·Application pending·0 cites
- 1633US2002137306A1Method for forming polysilicon-filled trench isolationsFiled 2001·Application pending·0 cites
- 1732US2003008515A1Method of fabricating a vertical MOS transistorFiled 2001·Application pending·0 cites
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