Inventor · disambiguated record
Dae-Kwon Joo
Also filed as: JOO DAE K · JOO DAE-KWON
12 granted patents·2 pending applications·55 citations·filing 1992–2014
87Inventor score
Top patents by PatentIndex Score
14 records- 0185US8652908B2Semiconductor devices employing high-K dielectric layers as a gate insulating layer and methods of fabricating the sameKIM WEONHONG·Filed 2011·Granted Feb 18, 2014·9 cites·11 claims
- 0281US8673711B2Methods of fabricating a semiconductor device having a high-K gate dielectric layer and semiconductor devices fabricated therebyKIM WEONHONG·Filed 2011·Granted Mar 18, 2014·7 cites·18 claims
- 0376US8563411B2Semiconductor devices having a diffusion barrier layer and methods of manufacturing the sameLIM HA-JIN·Filed 2011·Granted Oct 22, 2013·4 cites·20 claims
- 0469US5418146AProcess for preparing dipeptidesMIWON CO LTD·Filed 1992·Granted May 23, 1995·30 cites·6 claims
- 0568US8963227B2Semiconductor devices having a diffusion barrier layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 24, 2015·2 cites·17 claims
- 0667US8912611B2Semiconductor device having a high-K gate dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 16, 2014·2 cites·7 claims
- 0755US9023718B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 5, 2015·0 cites·4 claims
- 0848US2014124872A1Semiconductor devices employing high-k dielectric layers as a gate insulating layerSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 0946US8673747B2Method of fabricating semiconductor deviceDO JIN-HO·Filed 2011·Granted Mar 18, 2014·0 cites·4 claims
- 1044US8455345B2Methods of forming gate structure and methods of manufacturing semiconductor device including the sameLIM HA-JIN·Filed 2011·Granted Jun 4, 2013·0 cites·20 claims
- 1138US8664111B2Method of patterning a semiconductor device with hard maskLIM HA-JIN·Filed 2011·Granted Mar 4, 2014·0 cites·8 claims
- 1235US2011306171A1Methods of fabricating semiconductor devices with differentially nitrided gate insulatorsLIM HA-JIN·Filed 2011·Application pending·0 cites
- 1333US8575705B2Semiconductor devices including MOS transistors having an optimized channel region and methods of fabricating the sameLIM HAJIN·Filed 2010·Granted Nov 5, 2013·0 cites·20 claims
- 1432US5334746AProcess for producing α-L-aspartyl-L-phenylalanine methyl esterMIWON CO LTD·Filed 1993·Granted Aug 2, 1994·1 cites·26 claims
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