Inventor

SANDOW CHRISTIAN PHILIPP

DE48 patents

⚠️ This page may combine multiple inventors who share the name “SANDOW CHRISTIAN PHILIPP”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SANDOW CHRISTIAN PHILIPP

INFINEON TECHNOLOGIES AG

Power semiconductor transistor having fully depleted channel region

Power semiconductor device having fully depleted channel region

Power semiconductor transistor having fully depleted channel region

IGBT with reduced feedback capacitance

Power semiconductor transistor

Power semiconductor device having fully depleted channel regions

Power semiconductor device having fully depleted channel regions

Insulated gate bipolar transistor device, semiconductor device and method for forming said devices

Power semiconductor device having nanometer-scale structure

Semiconductor device including a plurality of trenches

IGBT with dV/dt controllability

Power semiconductor device

Power semiconductor device having fully depleted channel regions

IGBT with dV/dt controllability

Insulated gate bipolar transistor device having a fin structure

Insulated gate bipolar transistor having first and second field stop zone portions and manufacturing method

Diode with structured barrier region

RC IGBT with an IGBT section and a diode section

Power semiconductor device

Power semiconductor device having different channel regions

Power semiconductor device having cells with channel regions of different conductivity types

Power semiconductor device having different channel regions

Power semiconductor device having fully depleted channel regions

Power semiconductor device having fully depleted channel regions

Semiconductor devices

IGBT having at least one first type transistor cell and reduced feedback capacitance

Vertical power semiconductor device and manufacturing method

Insulated gate bipolar Transistor device having a fin structure

Insulated gate bipolar transistor device having a fin structure

Semiconductor device with a reduced band gap zone

Insulated gate bipolar transistor device having a fin structure

Power semiconductor device having fully depleted channel regions

Cell design for MOS-controlled power semiconductor device

INFINEON TECHNOLOGIES AUSTRIA AG

Method for self adaption of gate current controls by capacitance measurement of a power transistor

Semiconductor device including a transistor with one or more barrier regions

Semiconductor device including insulated gate bipolar transistor

Semiconductor device including an anode contact region having a varied doping concentration

Semiconductor device comprising a barrier region

Power semiconductor device with dV/dt controllability

Insulated gate bipolar transistor

Semiconductor device having a transistor with trenches and mesas

Diode including a plurality of trenches

Reverse-conducting igbt having a reduced forward recovery voltage

Rc igbt

INFINEON TECH DRESDEN GMBH & CO KG

Voltage-controlled switching device with resistive path

Power semiconductor switch with improved controllability

IGBT with fully depletable n- and p-channel regions

INFINEON TECH AUSTRIA AG

Diode including a trench electrode subdivided into at least first and second parts