Inventor · disambiguated record
Christopher C. Parks
Also filed as: PARKS CHRISTOPHER · PARKS CHRISTOPHER C · PARKS CHRISTOPHER CARR
32 granted patents·3 pending applications·627 citations·filing 1991–2018
97Inventor score
Top patents by PatentIndex Score
35 records- 0194US6268291B1Method for forming electromigration-resistant structures by dopingIBM·Filed 1998·Granted Jul 31, 2001·183 cites·32 claims
- 0290US6589874B2Method for forming electromigration-resistant structures by dopingIBM·Filed 2001·Granted Jul 8, 2003·52 cites·13 claims
- 0389US7276796B1Formation of oxidation-resistant seed layer for interconnect applicationsIBM·Filed 2006·Granted Oct 2, 2007·17 cites·15 claims
- 0488US6123825AElectromigration-resistant copper microstructure and process of makingIBM·Filed 1998·Granted Sep 26, 2000·85 cites·25 claims
- 0587US7585765B2Formation of oxidation-resistant seed layer for interconnect applicationsIBM·Filed 2007·Granted Sep 8, 2009·14 cites·16 claims
- 0686US8969197B2Copper interconnect structure and its formationEDELSTEIN DANIEL C·Filed 2012·Granted Mar 3, 2015·7 cites·7 claims
- 0784US8415772B2Method to prevent surface decomposition of III-V compound semiconductorsDE SOUZA JOEL P·Filed 2012·Granted Apr 9, 2013·5 cites·12 claims
- 0880US6358855B1Clean method for recessed conductive barriersINFINEON TECHNOLOGIES AG·Filed 2000·Granted Mar 19, 2002·24 cites·15 claims
- 0977US6890833B2Trench isolation employing a doped oxide trench fillIBM·Filed 2003·Granted May 10, 2005·25 cites·15 claims
- 1076US5998253AMethod of forming a dopant outdiffusion control structure including selectively grown silicon nitride in a trench capacitor of a DRAM cellSIEMENS AG·Filed 1997·Granted Dec 7, 1999·40 cites·14 claims
- 1175US6057220ATitanium polycide stabilization with a porous barrierIBM·Filed 1997·Granted May 2, 2000·36 cites·11 claims
- 1274US6572982B1Electromigration-resistant copper microstructureIBM·Filed 2000·Granted Jun 3, 2003·15 cites·6 claims
- 1368US5192708ASub-layer contact technique using in situ doped amorphous silicon and solid phase recrystallizationIBM·Filed 1991·Granted Mar 9, 1993·44 cites·12 claims
- 1466US5793075ADeep trench cell capacitor with inverting counter electrodeIBM·Filed 1996·Granted Aug 11, 1998·18 cites·29 claims
- 1564US8431476B2Method to prevent surface decomposition of III-V compound semiconductorsDE SOUZA JOEL P·Filed 2012·Granted Apr 30, 2013·1 cites·20 claims
- 1663US9960118B2Contact using multilayer linerGLOBALFOUNDRIES INC·Filed 2016·Granted May 1, 2018·1 cites·14 claims
- 1761US7843067B2Method and structure of integrated rhodium contacts with copper interconnectsIBM·Filed 2008·Granted Nov 30, 2010·1 cites·20 claims
- 1861US5907777AMethod for forming field effect transistors having different threshold voltages and devices formed therebyIBM·Filed 1997·Granted May 25, 1999·22 cites·21 claims
- 1955US9589894B2Copper interconnect structure and its formationIBM·Filed 2014·Granted Mar 7, 2017·0 cites·18 claims
- 2054US8273649B2Method to prevent surface decomposition of III-V compound semiconductorsDE SOUZA JOEL P·Filed 2008·Granted Sep 25, 2012·0 cites·15 claims
- 2154US6764551B2Process for removing dopant ions from a substrateIBM·Filed 2001·Granted Jul 20, 2004·5 cites·12 claims
- 2254US6265278B1Deep trench cell capacitor with inverting counter electrodeIBM·Filed 1998·Granted Jul 24, 2001·10 cites·18 claims
- 2352US8901674B2Scaling of metal gate with aluminum containing metal layer for threshold voltage shiftIBM·Filed 2013·Granted Dec 2, 2014·0 cites·8 claims
- 2451US10483205B2Contact using multilayer linerGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 19, 2019·0 cites·17 claims
- 2550US6797582B2Vertical thermal nitride mask (anti-collar) and processing thereofIBM·Filed 2003·Granted Sep 28, 2004·2 cites·10 claims
- 2646US6399434B1Doped structures containing diffusion barriersIBM·Filed 2000·Granted Jun 4, 2002·3 cites·7 claims
- 2744US7227265B2Electroplated copper interconnection structure, process for making and electroplating bathIBM·Filed 2004·Granted Jun 5, 2007·1 cites·21 claims
- 2843US8563446B2Technique to create a buried plate in embedded dynamic random access memory deviceCHAKRAVARTI ASHIMA B·Filed 2012·Granted Oct 22, 2013·0 cites·15 claims
- 2943US2007210448A1Electroless cobalt-containing liner for middle-of-the-line (mol) applicationsIBM·Filed 2006·Application pending·0 cites
- 3042US8236710B2Technique to create a buried plate in embedded dynamic random access memory deviceCHAKRAVARTI ASHIMA B·Filed 2010·Granted Aug 7, 2012·0 cites·17 claims
- 3142US6815343B2Gas treatment of thin film structures with catalytic actionIBM·Filed 2002·Granted Nov 9, 2004·0 cites·11 claims
- 3240US6194736B1Quantum conductive recrystallization barrier layersIBM·Filed 1998·Granted Feb 27, 2001·8 cites·31 claims
- 3340US2003107111A1A 3-d microelectronic structure including a vertical thermal nitride maskIBM·Filed 2001·Application pending·0 cites
- 3437US2004194813A1Process for removing dopant ions from a substrateRIGGS DAVID B·Filed 2004·Application pending·0 cites
- 3533US5374481APolyemitter structure with improved interface controlIBM·Filed 1993·Granted Dec 20, 1994·8 cites·2 claims
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