Inventor
KONISHI YASUHIRO
JP93 patents
⚠️ This page may combine multiple inventors who share the name “KONISHI YASUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
48 patentsUS5815462ASep 29, 1998
Synchronous semiconductor memory device and synchronous memory module
MITSUBISHI ELECTRIC CORP157 citations99
US5708611AJan 13, 1998
Synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP126 citations99
US5404338AApr 4, 1995
Synchronous type semiconductor memory device operating in synchronization with an external clock signal
MITSUBISHI ELECTRIC CORP242 citations99
US5384745AJan 24, 1995
Synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP430 citations99
US6489819B1Dec 3, 2002
Clock synchronous semiconductor memory device allowing testing by low speed tester
MITSUBISHI ELECTRIC CORP92 citations98
US5796669AAug 18, 1998
Synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP103 citations98
US5594704AJan 14, 1997
Synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP117 citations98
US5880998AMar 9, 1999
Synchronous semiconductor memory device in which current consumed by input buffer circuit is reduced
MITSUBISHI ELECTRIC CORP108 citations97
US6170036B1Jan 2, 2001
Semiconductor memory device and data transfer circuit for transferring data between a DRAM and a SRAM
MITSUBISHI ELECTRIC CORP37 citations96
US5867446AFeb 2, 1999
Synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP85 citations96
US5764584AJun 9, 1998
Multi-bank synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP57 citations96
US5764590AJun 9, 1998
Synchronous semiconductor memory device which allows switching of bit configuration
MITSUBISHI ELECTRIC CORP87 citations96
US5731727AMar 24, 1998
Voltage control type delay circuit and internal clock generation circuit using the same
MITSUBISHI ELECTRIC CORP91 citations96
US5652723AJul 29, 1997
Semiconductor memory device
MITSUBISHI ELECTRIC CORP51 citations96
US5629897AMay 13, 1997
Synchronous semiconductor memory device having a mode requiring an internal clock signal and a mode not requiring the internal clock signal
MITSUBISHI ELECTRIC CORP76 citations96
US5603009AFeb 11, 1997
Semiconductor memory device including a data transfer circuit for transferring data between a DRAM and an SRAM
MITSUBISHI ELECTRIC CORP40 citations96
US5587950ADec 24, 1996
Test circuit in clock synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP82 citations96
US5559750ASep 24, 1996
Semiconductor memory device
MITSUBISHI ELECTRIC CORP28 citations96
US5544121AAug 6, 1996
Semiconductor memory device
MITSUBISHI ELECTRIC CORP33 citations96
US5517462AMay 14, 1996
Synchronous type semiconductor memory device operating in synchronization with an external clock signal
MITSUBISHI ELECTRIC CORP81 citations96
US5511029AApr 23, 1996
Test circuit in clock synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP81 citations96
US5471430ANov 28, 1995
Test circuit for refresh counter of clock synchronous type semiconductor memory device
MITSUBISHI ELECTRIC CORP100 citations96
US4961167AOct 2, 1990
Substrate bias generator in a dynamic random access memory with auto/self refresh functions and a method of generating a substrate bias therein
MITSUBISHI ELECTRIC CORP61 citations96
US4961007AOct 2, 1990
Substrate bias potential generator of a semiconductor integrated circuit device and a generating method therefor
MITSUBISHI ELECTRIC CORP101 citations96
US4954992ASep 4, 1990
Random access memory having separate read out and write in bus lines for reduced access time and operating method therefor
MITSUBISHI ELECTRIC CORP73 citations96
US4943960AJul 24, 1990
Self-refreshing of dynamic random access memory device and operating method therefor
MITSUBISHI ELECTRIC CORP93 citations96
US4933907AJun 12, 1990
Dynamic random access memory device and operating method therefor
MITSUBISHI ELECTRIC CORP104 citations96
US4837747AJun 6, 1989
Redundary circuit with a spare main decoder responsive to an address of a defective cell in a selected cell block
MITSUBISHI ELECTRIC CORP77 citations96
US6356484B2Mar 12, 2002
Semiconductor memory device
MITSUBISHI ELECTRIC CORP42 citations95
US6434661B1Aug 13, 2002
Synchronous semiconductor memory including register for storing data input and output mode information
MITSUBISHI ELECTRIC CORP19 citations93
US6333873B1Dec 25, 2001
Semiconductor memory device with an internal voltage generating circuit
MITSUBISHI ELECTRIC CORP49 citations93
US5844859ADec 1, 1998
Synchronous semiconductor memory device reliably fetching external signal in synchronization with clock signal periodically supplied from the exterior
MITSUBISHI ELECTRIC CORP19 citations93
US5805603ASep 8, 1998
Synchronous semiconductor memory device realizing high speed and accurate operation
MITSUBISHI ELECTRIC CORP30 citations93
US5469099ANov 21, 1995
Power-on reset signal generator and operating method thereof
MITSUBISHI ELECTRIC CORP34 citations93
US5289431AFeb 22, 1994
Semiconductor memory device divided into blocks and operable to read and write data through different data lines and operation method of the same
MITSUBISHI ELECTRIC CORP26 citations93
US5270977ADec 14, 1993
Dynamic random access memory device capable of performing test mode operation and method of operating such memory device
MITSUBISHI ELECTRIC CORP22 citations93
US5208778AMay 4, 1993
Dynamic-type semiconductor memory device operable in test mode and method of testing functions thereof
MITSUBISHI ELECTRIC CORP45 citations93
US5151614ASep 29, 1992
Circuit having charge compensation and an operation method of the same
MITSUBISHI ELECTRIC CORP46 citations93
US5010259AApr 23, 1991
Voltage boosting circuit and operating method thereof
MITSUBISHI ELECTRIC CORP40 citations93
US4907199AMar 6, 1990
Dynamic semiconductor memory device and method for controllig the precharge/refresh and access modes thereof
MITSUBISHI ELECTRIC CORP38 citations93
US4899313AFeb 6, 1990
Semiconductor memory device with an improved multi-bit test mode
MITSUBISHI ELECTRIC CORP28 citations93
US4896297AJan 23, 1990
Circuit for generating a boosted signal for a word line
MITSUBISHI ELECTRIC CORP35 citations93
US6449198B1Sep 10, 2002
Semiconductor memory device
MITSUBISHI ELECTRIC CORP30 citations92
US5592434AJan 7, 1997
Synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP34 citations92
US6157992ADec 5, 2000
Synchronous semiconductor memory having read data mask controlled output circuit
MITSUBISHI ELECTRIC CORP18 citations84
US6026029AFeb 15, 2000
Semiconductor memory device
MITSUBISHI ELECTRIC CORP15 citations82
US5848004ADec 8, 1998
Semiconductor memory device
MITSUBISHI ELECTRIC CORP8 citations82
US5650968AJul 22, 1997
Semiconductor memory device
MITSUBISHI ELECTRIC CORP15 citations82
HONDA MOTOR CO LTD
1 patentOHSHIMA KENICHI
1 patentShowing the top 50 of 93 patents by PatentIndex Score.