Inventor · disambiguated record
Robert Benjamin Laibowitz
Also filed as: LAIBOWITZ ROBERT · LAIBOWITZ ROBERT B · LAIBOWITZ ROBERT BENJAMIN
33 granted patents·8 pending applications·1,844 citations·filing 1979–2004
98Inventor score
Top patents by PatentIndex Score
41 records- 0198US6090659ALead silicate based capacitor structuresIBM·Filed 1999·Granted Jul 18, 2000·397 cites·3 claims
- 0297US5981970AThin-film field-effect transistor with organic semiconductor requiring low operating voltagesIBM·Filed 1997·Granted Nov 9, 1999·232 cites·20 claims
- 0397US5946551AFabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectricFiled 1997·Granted Aug 31, 1999·275 cites·31 claims
- 0495US6888714B2Tuneable ferroelectric decoupling capacitorIBM·Filed 2002·Granted May 3, 2005·106 cites·13 claims
- 0594US6172385B1Multilayer ferroelectric capacitor structureIBM·Filed 1998·Granted Jan 9, 2001·155 cites·15 claims
- 0693US5026682ADevices using high Tc superconductorsIBM·Filed 1987·Granted Jun 25, 1991·100 cites·22 claims
- 0792US6344660B1Thin-film field-effect transistor with organic semiconductor requiring low operating voltagesIBM·Filed 1999·Granted Feb 5, 2002·108 cites·23 claims
- 0887US6774463B1Superconductor gate semiconductor channel field effect transistorIBM·Filed 1992·Granted Aug 10, 2004·70 cites·1 claims
- 0985US6255122B1Amorphous dielectric capacitors on siliconIBM·Filed 1999·Granted Jul 3, 2001·45 cites·26 claims
- 1082US6088216ALead silicate based capacitor structuresIBM·Filed 1995·Granted Jul 11, 2000·50 cites·7 claims
- 1180US6207584B1High dielectric constant material deposition to achieve high capacitanceIBM·Filed 2000·Granted Mar 27, 2001·24 cites·31 claims
- 1275US6525427B2BEOL decoupling capacitorIBM·Filed 2002·Granted Feb 25, 2003·11 cites·5 claims
- 1372US4557995AMethod of making submicron circuit structuresIBM·Filed 1981·Granted Dec 10, 1985·35 cites·29 claims
- 1469US6777809B2BEOL decoupling capacitorIBM·Filed 2002·Granted Aug 17, 2004·7 cites·5 claims
- 1568US5298875AControllable levitation deviceIBM·Filed 1991·Granted Mar 29, 1994·36 cites·26 claims
- 1668US4962086AHigh Tc superconductor - gallate crystal structuresIBM·Filed 1988·Granted Oct 9, 1990·18 cites·29 claims
- 1767US6717199B2Tailored insulator properties for devicesIBM·Filed 2003·Granted Apr 6, 2004·9 cites·11 claims
- 1866US4751563AMicrominiaturized electrical interconnection device and its method of fabricationIBM·Filed 1984·Granted Jun 14, 1988·27 cites·35 claims
- 1962US5926360AMetallized oxide structure and fabricationIBM·Filed 1997·Granted Jul 20, 1999·25 cites·29 claims
- 2061US6507476B1Tuneable ferroelectric decoupling capacitorIBM·Filed 1999·Granted Jan 14, 2003·17 cites·11 claims
- 2160US4197332ASub 100A range line width pattern fabricationIBM·Filed 1979·Granted Apr 8, 1980·17 cites·14 claims
- 2259US4316093ASub-100A range line width pattern fabricationIBM·Filed 1979·Granted Feb 16, 1982·17 cites·3 claims
- 2352US6211543B1Lead silicate based capacitor structuresIBM·Filed 2000·Granted Apr 3, 2001·2 cites·4 claims
- 2450US7022626B2Dielectrics with improved leakage characteristicsIBM·Filed 2003·Granted Apr 4, 2006·2 cites·31 claims
- 2549US6271076B1Method for fabricating a novel metallized oxide structureIBM·Filed 1999·Granted Aug 7, 2001·13 cites·8 claims
- 2648US5650377ASelective epitaxial growth of high-TC superconductive materialIBM·Filed 1993·Granted Jul 22, 1997·12 cites·8 claims
- 2747US6593181B2Tailored insulator properties for devicesIBM·Filed 2001·Granted Jul 15, 2003·1 cites·53 claims
- 2845US4982248AGated structure for controlling fluctuations in mesoscopic structuresIBM·Filed 1989·Granted Jan 1, 1991·10 cites·38 claims
- 2945US2004195694A1BEOL decoupling capacitorIBM·Filed 2004·Application pending·0 cites
- 3044US5863869AThin film high Tc oxide superconductors and method for making the sameIBM·Filed 1995·Granted Jan 26, 1999·10 cites·49 claims
- 3143US2003085447A1Beol decoupling capacitorIBM·Filed 2002·Application pending·0 cites
- 3242US6815343B2Gas treatment of thin film structures with catalytic actionIBM·Filed 2002·Granted Nov 9, 2004·0 cites·11 claims
- 3341US6982240B1Method for making a superconductor deviceIBM·Filed 1991·Granted Jan 3, 2006·7 cites·15 claims
- 3441US2001040271A1BEOL decoupling capacitorFiled 2001·Application pending·0 cites
- 3538US2004121566A1Method to produce low leakage high K materials in thin film formINFINEON TECHNOLOGIES CORP·Filed 2002·Application pending·0 cites
- 3637US2001014505A1Amorphous dielectric capacitors on siliconIBM·Filed 2001·Application pending·0 cites
- 3736US2001016226A1Method for preparing the surface of a dielectricIBM·Filed 2001·Application pending·0 cites
- 3835US2005196917A1Method for forming a (111) oriented BSTO thin film layer for high dielectric constant capacitorsFiled 2004·Application pending·0 cites
- 3934US5447906AThin film high TC oxide superconductors and vapor deposition methods for making the sameIBM·Filed 1994·Granted Sep 5, 1995·3 cites·49 claims
- 4033US6054328AMethod for cleaning the surface of a dielectricIBM·Filed 1996·Granted Apr 25, 2000·3 cites·22 claims
- 4130US2001013660A1Beol decoupling capacitorFiled 1999·Application pending·0 cites
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