Inventor · disambiguated record
Raashina Humayun
Also filed as: HUMAYUN RAASHINA
70 granted patents·13 pending applications·4,101 citations·filing 2002–2024
99Inventor score
Top patents by PatentIndex Score
83 records- 0199US7888233B1Flowable film dielectric gap fill processNOVELLUS SYSTEMS INC·Filed 2009·Granted Feb 15, 2011·572 cites·30 claims
- 0299US7524735B1Flowable film dielectric gap fill processNOVELLUS SYSTEMS INC·Filed 2006·Granted Apr 28, 2009·166 cites·19 claims
- 0399US7074690B1Selective gap-fill processNOVELLUS SYSTEMS INC·Filed 2004·Granted Jul 11, 2006·471 cites·37 claims
- 0498US10916434B2Feature fill with multi-stage nucleation inhibitionLAM RES CORP·Filed 2020·Granted Feb 9, 2021·9 cites·19 claims
- 0598US10103058B2Tungsten feature fillNOVELLUS SYSTEMS INC·Filed 2017·Granted Oct 16, 2018·23 cites·13 claims
- 0698US9653353B2Tungsten feature fillNOVELLUS SYSTEMS INC·Filed 2013·Granted May 16, 2017·50 cites·16 claims
- 0798US9240347B2Tungsten feature fillNOVELLUS SYSTEMS INC·Filed 2014·Granted Jan 19, 2016·72 cites·20 claims
- 0898US8809161B2Flowable film dielectric gap fill processNOVELLUS SYSTEMS INC·Filed 2013·Granted Aug 19, 2014·21 cites·27 claims
- 0998US8435894B2Depositing tungsten into high aspect ratio featuresCHANDRASHEKAR ANAND·Filed 2012·Granted May 7, 2013·314 cites·13 claims
- 1098US8153520B1Thinning tungsten layer after through silicon via fillingCHANDRASHEKAR ANAND·Filed 2009·Granted Apr 10, 2012·218 cites·22 claims
- 1197US11901227B2Feature fill with nucleation inhibitionLAM RES CORP·Filed 2021·Granted Feb 13, 2024·3 cites·18 claims
- 1297US10170320B2Feature fill with multi-stage nucleation inhibitionLAM RES CORP·Filed 2016·Granted Jan 1, 2019·20 cites·19 claims
- 1397US9997405B2Feature fill with nucleation inhibitionLAM RES CORP·Filed 2015·Granted Jun 12, 2018·22 cites·19 claims
- 1497US9748137B2Method for void-free cobalt gap fillLAM RES CORP·Filed 2015·Granted Aug 29, 2017·26 cites·18 claims
- 1597US9613818B2Deposition of low fluorine tungsten by sequential CVD processLAM RES CORP·Filed 2015·Granted Apr 4, 2017·33 cites·12 claims
- 1697US9595470B2Methods of preparing tungsten and tungsten nitride thin films using tungsten chloride precursorLAM RES CORP·Filed 2015·Granted Mar 14, 2017·27 cites·14 claims
- 1797US9236297B2Low tempature tungsten film deposition for small critical dimension contacts and interconnectsNOVELLUS SYSTEMS INC·Filed 2013·Granted Jan 12, 2016·38 cites·17 claims
- 1897US8835317B2Depositing tungsten into high aspect ratio featuresNOVELLUS SYSTEMS INC·Filed 2013·Granted Sep 16, 2014·33 cites·23 claims
- 1997US8623733B2Methods for depositing ultra thin low resistivity tungsten film for small critical dimension contacts and interconnectsCHEN FENG·Filed 2010·Granted Jan 7, 2014·36 cites·19 claims
- 2097US8367546B2Methods for forming all tungsten contacts and linesNOVELLUS SYSTEMS INC·Filed 2011·Granted Feb 5, 2013·42 cites·20 claims
- 2197US8124531B2Depositing tungsten into high aspect ratio featuresCHANDRASHEKAR ANAND·Filed 2011·Granted Feb 28, 2012·64 cites·20 claims
- 2297US8053365B2Methods for forming all tungsten contacts and linesNOVELLUS SYSTEMS INC·Filed 2007·Granted Nov 8, 2011·66 cites·27 claims
- 2397US7166531B1VLSI fabrication processes for introducing pores into dielectric materialsNOVELLUS SYSTEMS INC·Filed 2005·Granted Jan 23, 2007·160 cites·36 claims
- 2496US11075115B2Tungsten feature fillNOVELLUS SYSTEMS INC·Filed 2018·Granted Jul 27, 2021·11 cites·22 claims
- 2596US10777453B2Low resistivity films containing molybdenumLAM RES CORP·Filed 2019·Granted Sep 15, 2020·18 cites·20 claims
- 2696US10580695B2Feature fill with nucleation inhibitionLAM RES CORP·Filed 2018·Granted Mar 3, 2020·13 cites·13 claims
- 2796US10580654B2Feature fill with multi-stage nucleation inhibitionLAM RES CORP·Filed 2018·Granted Mar 3, 2020·12 cites·14 claims
- 2896US10510590B2Low resistivity films containing molybdenumLAM RES CORP·Filed 2018·Granted Dec 17, 2019·26 cites·20 claims
- 2996US10256142B2Tungsten feature fill with nucleation inhibitionNOVELLUS SYSTEMS INC·Filed 2013·Granted Apr 9, 2019·25 cites·23 claims
- 3096US10242879B2Methods and apparatus for forming smooth and conformal cobalt film by atomic layer depositionLAM RES CORP·Filed 2017·Granted Mar 26, 2019·18 cites·19 claims
- 3196US9978605B2Method of forming low resistivity fluorine free tungsten film without nucleationLAM RES CORP·Filed 2017·Granted May 22, 2018·23 cites·23 claims
- 3296US9953984B2Tungsten for wordline applicationsLAM RES CORP·Filed 2016·Granted Apr 24, 2018·12 cites·20 claims
- 3396US9673146B2Low temperature tungsten film deposition for small critical dimension contacts and interconnectsNOVELLUS SYSTEMS INC·Filed 2016·Granted Jun 6, 2017·12 cites·15 claims
- 3496US9082826B2Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor featuresLAM RES CORP·Filed 2014·Granted Jul 14, 2015·37 cites·27 claims
- 3596US9034768B2Depositing tungsten into high aspect ratio featuresCHANDRASHEKAR ANAND·Filed 2010·Granted May 19, 2015·32 cites·21 claims
- 3696US8409987B2Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristicsCHANDRASHEKAR ANAND·Filed 2011·Granted Apr 2, 2013·34 cites·19 claims
- 3796US8129270B1Method for depositing tungsten film having low resistivity, low roughness and high reflectivityCHANDRASHEKAR ANAND·Filed 2008·Granted Mar 6, 2012·37 cites·17 claims
- 3896US8058170B2Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristicsCHANDRASHEKAR ANAND·Filed 2009·Granted Nov 15, 2011·83 cites·21 claims
- 3995US10731250B2Depositing ruthenium layers in interconnect metallizationLAM RES CORP·Filed 2018·Granted Aug 4, 2020·12 cites·25 claims
- 4095US9548228B2Void free tungsten fill in different sized featuresLAM RES CORP·Filed 2014·Granted Jan 17, 2017·23 cites·12 claims
- 4195US9034760B2Methods of forming tensile tungsten films and compressive tungsten filmsNOVELLUS SYSTEMS INC·Filed 2013·Granted May 19, 2015·25 cites·21 claims
- 4295US8551885B2Method for reducing tungsten roughness and improving reflectivityCHEN FENG·Filed 2008·Granted Oct 8, 2013·68 cites·21 claims
- 4395US8501620B2Method for depositing tungsten film having low resistivity, low roughness and high reflectivityCHANDRASHEKAR ANAND·Filed 2012·Granted Aug 6, 2013·16 cites·20 claims
- 4495US8481403B1Flowable film dielectric gap fill processGAURI VISHAL·Filed 2011·Granted Jul 9, 2013·30 cites·25 claims
- 4595US8119527B1Depositing tungsten into high aspect ratio featuresCHADRASHEKAR ANAND·Filed 2009·Granted Feb 21, 2012·452 cites·19 claims
- 4695US7176144B1Plasma detemplating and silanol capping of porous dielectric filmsNOVELLUS SYSTEMS INC·Filed 2004·Granted Feb 13, 2007·128 cites·41 claims
- 4794US9589808B2Method for depositing extremely low resistivity tungstenLAM RES CORP·Filed 2013·Granted Mar 7, 2017·17 cites·14 claims
- 4894US6805801B1Method and apparatus to remove additives and contaminants from a supercritical processing solutionNOVELLUS SYSTEMS INC·Filed 2002·Granted Oct 19, 2004·83 cites·32 claims
- 4993US10283404B2Selective deposition of WCN barrier/adhesion layer for interconnectLAM RES CORP·Filed 2017·Granted May 7, 2019·19 cites·20 claims
- 5093US9257302B1CVD flowable gap fillWANG FENG·Filed 2012·Granted Feb 9, 2016·16 cites·17 claims
Showing the top 50 of 83 patent records by PatentIndex Score.
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