Inventor · disambiguated record
Liyang Song
Also filed as: SONG LIYANG
10 granted patents·5 pending applications·16 citations·filing 2011–2017
83Inventor score
Top patents by PatentIndex Score
15 records- 0188US9059244B2Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusionIBM·Filed 2013·Granted Jun 16, 2015·8 cites·15 claims
- 0281US9397158B2Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusionGLOBALFOUNDRIES US 2 LLC·Filed 2015·Granted Jul 19, 2016·3 cites·20 claims
- 0371US9040399B2Threshold voltage adjustment for thin body MOSFETsBRODSKY MARYJANE·Filed 2011·Granted May 26, 2015·3 cites·5 claims
- 0459US10817779B2Bayesian network based hybrid machine learningIBM·Filed 2017·Granted Oct 27, 2020·2 cites·20 claims
- 0555US8957464B2Transistors with uniaxial stress channelsIBM·Filed 2014·Granted Feb 17, 2015·0 cites·20 claims
- 0653US10256150B2Fabricating Fin-based split-gate high-drain-voltage transistor by work function tuningIBM·Filed 2017·Granted Apr 9, 2019·0 cites·5 claims
- 0753US2015001625A1Structure and method of high-performance extremely thin silicon on insulator complementary metal-oxide-semiconductor transistors with dual stress buried insulatorsIBM·Filed 2014·Application pending·0 cites
- 0852US10170368B2Fabricating fin-based split-gate high-drain-voltage transistor by work function tuningIBM·Filed 2017·Granted Jan 1, 2019·0 cites·10 claims
- 0951US9484402B2Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusionGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 1, 2016·0 cites·20 claims
- 1051US8633077B2Transistors with uniaxial stress channelsCAI MING·Filed 2012·Granted Jan 21, 2014·0 cites·18 claims
- 1149US8927364B2Structure and method of high-performance extremely thin silicon on insulator complementary metal—oxide—semiconductor transistors with dual stress buried insulatorsCAI MING·Filed 2012·Granted Jan 6, 2015·0 cites·3 claims
- 1245US2013105896A1Threshold Voltage Adjustment For Thin Body MosfetsBRODSKY MARYJANE·Filed 2012·Application pending·0 cites
- 1345US2013328135A1Preventing fully silicided formation in high-k metal gate processingBU HUIMING·Filed 2012·Application pending·0 cites
- 1445US2013330899A1Preventing fully silicided formation in high-k metal gate processingBU HUIMING·Filed 2012·Application pending·0 cites
- 1537US2013175632A1Reduction of contact resistance and junction leakageCAI MING·Filed 2012·Application pending·0 cites
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