Inventor
IWAMOTO HISASHI
JP55 patents
⚠️ This page may combine multiple inventors who share the name “IWAMOTO HISASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
44 patentsUS6338113B1Jan 8, 2002
Memory module system having multiple memory modules
MITSUBISHI ELECTRIC CORP263 citations99
US5815462ASep 29, 1998
Synchronous semiconductor memory device and synchronous memory module
MITSUBISHI ELECTRIC CORP157 citations99
US5708611AJan 13, 1998
Synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP126 citations99
US5404338AApr 4, 1995
Synchronous type semiconductor memory device operating in synchronization with an external clock signal
MITSUBISHI ELECTRIC CORP242 citations99
US5384745AJan 24, 1995
Synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP430 citations99
US6489823B2Dec 3, 2002
Semiconductor device capable of generating highly precise internal clock
MITSUBISHI ELECTRIC CORP103 citations98
US6292040B1Sep 18, 2001
Internal clock signal generating circuit having function of generating internal clock signals which are multiplication of an external clock signal
MITSUBISHI ELECTRIC CORP90 citations98
US5796669AAug 18, 1998
Synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP103 citations98
US5594704AJan 14, 1997
Synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP117 citations98
US6170036B1Jan 2, 2001
Semiconductor memory device and data transfer circuit for transferring data between a DRAM and a SRAM
MITSUBISHI ELECTRIC CORP37 citations96
US6163491ADec 19, 2000
Synchronous semiconductor memory device which can be inspected even with low speed tester
MITSUBISHI ELECTRIC CORP55 citations96
US5946268AAug 31, 1999
Internal clock signal generation circuit including delay line, and synchronous type semiconductor memory device including internal clock signal
MITSUBISHI ELECTRIC CORP61 citations96
US5892730AApr 6, 1999
Synchronous semiconductor memory device operable in a plurality of data write operation modes
MITSUBISHI ELECTRIC CORP87 citations96
US5867446AFeb 2, 1999
Synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP85 citations96
US5764590AJun 9, 1998
Synchronous semiconductor memory device which allows switching of bit configuration
MITSUBISHI ELECTRIC CORP87 citations96
US5731727AMar 24, 1998
Voltage control type delay circuit and internal clock generation circuit using the same
MITSUBISHI ELECTRIC CORP91 citations96
US5652723AJul 29, 1997
Semiconductor memory device
MITSUBISHI ELECTRIC CORP51 citations96
US5629897AMay 13, 1997
Synchronous semiconductor memory device having a mode requiring an internal clock signal and a mode not requiring the internal clock signal
MITSUBISHI ELECTRIC CORP76 citations96
US5603009AFeb 11, 1997
Semiconductor memory device including a data transfer circuit for transferring data between a DRAM and an SRAM
MITSUBISHI ELECTRIC CORP40 citations96
US5559750ASep 24, 1996
Semiconductor memory device
MITSUBISHI ELECTRIC CORP28 citations96
US5544121AAug 6, 1996
Semiconductor memory device
MITSUBISHI ELECTRIC CORP33 citations96
US5517462AMay 14, 1996
Synchronous type semiconductor memory device operating in synchronization with an external clock signal
MITSUBISHI ELECTRIC CORP81 citations96
US6356484B2Mar 12, 2002
Semiconductor memory device
MITSUBISHI ELECTRIC CORP42 citations95
US6052329AApr 18, 2000
Output circuit and synchronous semiconductor memory device having a function of preventing output of invalid data
MITSUBISHI ELECTRIC CORP66 citations95
US6452849B1Sep 17, 2002
Semiconductor device with test mode for performing efficient calibration of measuring apparatus
MITSUBISHI ELECTRIC CORP25 citations93
US6434661B1Aug 13, 2002
Synchronous semiconductor memory including register for storing data input and output mode information
MITSUBISHI ELECTRIC CORP19 citations93
US6333873B1Dec 25, 2001
Semiconductor memory device with an internal voltage generating circuit
MITSUBISHI ELECTRIC CORP49 citations93
US6151273ANov 21, 2000
Synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP30 citations93
US5881017AMar 9, 1999
Synchronous semiconductor memory device allowing fast operation in either of prefetch operation and full page mode operation
MITSUBISHI ELECTRIC CORP49 citations93
US5844859ADec 1, 1998
Synchronous semiconductor memory device reliably fetching external signal in synchronization with clock signal periodically supplied from the exterior
MITSUBISHI ELECTRIC CORP19 citations93
US5805603ASep 8, 1998
Synchronous semiconductor memory device realizing high speed and accurate operation
MITSUBISHI ELECTRIC CORP30 citations93
US5270977ADec 14, 1993
Dynamic random access memory device capable of performing test mode operation and method of operating such memory device
MITSUBISHI ELECTRIC CORP22 citations93
US5592434AJan 7, 1997
Synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP34 citations92
US5940344AAug 17, 1999
Synchronous semiconductor memory device including internal clock signal generation circuit that generates an internal clock signal synchronizing in phase with external clock signal at high precision
MITSUBISHI ELECTRIC CORP17 citations84
US6184738B1Feb 6, 2001
Input buffer for supplying semiconductor device with internal signal based on comparison of external signal with reference potential
MITSUBISHI ELECTRIC CORP15 citations83
US6026029AFeb 15, 2000
Semiconductor memory device
MITSUBISHI ELECTRIC CORP15 citations82
US5848004ADec 8, 1998
Semiconductor memory device
MITSUBISHI ELECTRIC CORP8 citations82
US5650968AJul 22, 1997
Semiconductor memory device
MITSUBISHI ELECTRIC CORP15 citations82
US5623454AApr 22, 1997
Semiconductor memory device
MITSUBISHI ELECTRIC CORP9 citations82
US5583813ADec 10, 1996
Semiconductor memory device
MITSUBISHI ELECTRIC CORP12 citations82
US6118730ASep 12, 2000
Phase comparator with improved comparison precision and synchronous semiconductor memory device employing the same
MITSUBISHI ELECTRIC CORP11 citations74
US5946266AAug 31, 1999
Synchronous semiconductor memory device capable of reducing delay time at data input/output line upon data input
MITSUBISHI ELECTRIC CORP12 citations74
US5940328AAug 17, 1999
Synchronous semiconductor device with memory chips in a module for controlling output of strobe signal for trigger in reading data
MITSUBISHI ELECTRIC CORP15 citations74
US5530379AJun 25, 1996
Output buffer circuit that can be shared by a plurality of interfaces and a semiconductor device using the same
MITSUBISHI ELECTRIC CORP14 citations74
RENESAS TECH CORP
3 patentsUS6763079B1Jul 13, 2004
Semiconductor device allowing easy confirmation of operation of built in clock generation circuit
RENESAS TECH CORP21 citations93
US6720807B1Apr 13, 2004
Semiconductor device with clock generation circuit
RENESAS TECH CORP22 citations93
US6741507B2May 25, 2004
Semiconductor device outputting data at a timing with reduced jitter
RENESAS TECH CORP17 citations84
IWAMOTO HISASHI
1 patentMITSUBISHI ELECTRIC ENG
1 patentSONY CORP
1 patentShowing the top 50 of 55 patents by PatentIndex Score.