P

Inventor

IWAMOTO HISASHI

JP55 patents
⚠️ This page may combine multiple inventors who share the name “IWAMOTO HISASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

44 patents
US6338113B1Jan 8, 2002

Memory module system having multiple memory modules

MITSUBISHI ELECTRIC CORP263 citations99
US5815462ASep 29, 1998

Synchronous semiconductor memory device and synchronous memory module

MITSUBISHI ELECTRIC CORP157 citations99
US5708611AJan 13, 1998

Synchronous semiconductor memory device

MITSUBISHI ELECTRIC CORP126 citations99
US5404338AApr 4, 1995

Synchronous type semiconductor memory device operating in synchronization with an external clock signal

MITSUBISHI ELECTRIC CORP242 citations99
US5384745AJan 24, 1995

Synchronous semiconductor memory device

MITSUBISHI ELECTRIC CORP430 citations99
US6489823B2Dec 3, 2002

Semiconductor device capable of generating highly precise internal clock

MITSUBISHI ELECTRIC CORP103 citations98
US6292040B1Sep 18, 2001

Internal clock signal generating circuit having function of generating internal clock signals which are multiplication of an external clock signal

MITSUBISHI ELECTRIC CORP90 citations98
US5796669AAug 18, 1998

Synchronous semiconductor memory device

MITSUBISHI ELECTRIC CORP103 citations98
US5594704AJan 14, 1997

Synchronous semiconductor memory device

MITSUBISHI ELECTRIC CORP117 citations98
US6170036B1Jan 2, 2001

Semiconductor memory device and data transfer circuit for transferring data between a DRAM and a SRAM

MITSUBISHI ELECTRIC CORP37 citations96
US6163491ADec 19, 2000

Synchronous semiconductor memory device which can be inspected even with low speed tester

MITSUBISHI ELECTRIC CORP55 citations96
US5946268AAug 31, 1999

Internal clock signal generation circuit including delay line, and synchronous type semiconductor memory device including internal clock signal

MITSUBISHI ELECTRIC CORP61 citations96
US5892730AApr 6, 1999

Synchronous semiconductor memory device operable in a plurality of data write operation modes

MITSUBISHI ELECTRIC CORP87 citations96
US5867446AFeb 2, 1999

Synchronous semiconductor memory device

MITSUBISHI ELECTRIC CORP85 citations96
US5764590AJun 9, 1998

Synchronous semiconductor memory device which allows switching of bit configuration

MITSUBISHI ELECTRIC CORP87 citations96
US5731727AMar 24, 1998

Voltage control type delay circuit and internal clock generation circuit using the same

MITSUBISHI ELECTRIC CORP91 citations96
US5652723AJul 29, 1997

Semiconductor memory device

MITSUBISHI ELECTRIC CORP51 citations96
US5629897AMay 13, 1997

Synchronous semiconductor memory device having a mode requiring an internal clock signal and a mode not requiring the internal clock signal

MITSUBISHI ELECTRIC CORP76 citations96
US5603009AFeb 11, 1997

Semiconductor memory device including a data transfer circuit for transferring data between a DRAM and an SRAM

MITSUBISHI ELECTRIC CORP40 citations96
US5559750ASep 24, 1996

Semiconductor memory device

MITSUBISHI ELECTRIC CORP28 citations96
US5544121AAug 6, 1996

Semiconductor memory device

MITSUBISHI ELECTRIC CORP33 citations96
US5517462AMay 14, 1996

Synchronous type semiconductor memory device operating in synchronization with an external clock signal

MITSUBISHI ELECTRIC CORP81 citations96
US6356484B2Mar 12, 2002

Semiconductor memory device

MITSUBISHI ELECTRIC CORP42 citations95
US6052329AApr 18, 2000

Output circuit and synchronous semiconductor memory device having a function of preventing output of invalid data

MITSUBISHI ELECTRIC CORP66 citations95
US6452849B1Sep 17, 2002

Semiconductor device with test mode for performing efficient calibration of measuring apparatus

MITSUBISHI ELECTRIC CORP25 citations93
US6434661B1Aug 13, 2002

Synchronous semiconductor memory including register for storing data input and output mode information

MITSUBISHI ELECTRIC CORP19 citations93
US6333873B1Dec 25, 2001

Semiconductor memory device with an internal voltage generating circuit

MITSUBISHI ELECTRIC CORP49 citations93
US6151273ANov 21, 2000

Synchronous semiconductor memory device

MITSUBISHI ELECTRIC CORP30 citations93
US5881017AMar 9, 1999

Synchronous semiconductor memory device allowing fast operation in either of prefetch operation and full page mode operation

MITSUBISHI ELECTRIC CORP49 citations93
US5844859ADec 1, 1998

Synchronous semiconductor memory device reliably fetching external signal in synchronization with clock signal periodically supplied from the exterior

MITSUBISHI ELECTRIC CORP19 citations93
US5805603ASep 8, 1998

Synchronous semiconductor memory device realizing high speed and accurate operation

MITSUBISHI ELECTRIC CORP30 citations93
US5270977ADec 14, 1993

Dynamic random access memory device capable of performing test mode operation and method of operating such memory device

MITSUBISHI ELECTRIC CORP22 citations93
US5592434AJan 7, 1997

Synchronous semiconductor memory device

MITSUBISHI ELECTRIC CORP34 citations92
US5940344AAug 17, 1999

Synchronous semiconductor memory device including internal clock signal generation circuit that generates an internal clock signal synchronizing in phase with external clock signal at high precision

MITSUBISHI ELECTRIC CORP17 citations84
US6184738B1Feb 6, 2001

Input buffer for supplying semiconductor device with internal signal based on comparison of external signal with reference potential

MITSUBISHI ELECTRIC CORP15 citations83
US6026029AFeb 15, 2000

Semiconductor memory device

MITSUBISHI ELECTRIC CORP15 citations82
US5848004ADec 8, 1998

Semiconductor memory device

MITSUBISHI ELECTRIC CORP8 citations82
US5650968AJul 22, 1997

Semiconductor memory device

MITSUBISHI ELECTRIC CORP15 citations82
US5623454AApr 22, 1997

Semiconductor memory device

MITSUBISHI ELECTRIC CORP9 citations82
US5583813ADec 10, 1996

Semiconductor memory device

MITSUBISHI ELECTRIC CORP12 citations82
US6118730ASep 12, 2000

Phase comparator with improved comparison precision and synchronous semiconductor memory device employing the same

MITSUBISHI ELECTRIC CORP11 citations74
US5946266AAug 31, 1999

Synchronous semiconductor memory device capable of reducing delay time at data input/output line upon data input

MITSUBISHI ELECTRIC CORP12 citations74
US5940328AAug 17, 1999

Synchronous semiconductor device with memory chips in a module for controlling output of strobe signal for trigger in reading data

MITSUBISHI ELECTRIC CORP15 citations74
US5530379AJun 25, 1996

Output buffer circuit that can be shared by a plurality of interfaces and a semiconductor device using the same

MITSUBISHI ELECTRIC CORP14 citations74

RENESAS TECH CORP

3 patents

IWAMOTO HISASHI

1 patent

MITSUBISHI ELECTRIC ENG

1 patent

SONY CORP

1 patent

Showing the top 50 of 55 patents by PatentIndex Score.