Inventor
HO MING-CHOU
TW22 patents
⚠️ This page may combine multiple inventors who share the name “HO MING-CHOU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
11 patentsUS6055183AApr 25, 2000
Erase method of flash EEPROM by using snapback characteristic
TAIWAN SEMICONDUCTOR MFG54 citations96
US5862078AJan 19, 1999
Mixed mode erase method to improve flash eeprom write/erase threshold closure
TAIWAN SEMICONDUCTOR MFG56 citations95
US6110782AAug 29, 2000
Method to combine high voltage device and salicide process
TAIWAN SEMICONDUCTOR MFG32 citations92
US6049484AApr 11, 2000
Erase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate erase
TAIWAN SEMICONDUCTOR MFG43 citations92
US5949717ASep 7, 1999
Method to improve flash EEPROM cell write/erase threshold voltage closure
TAIWAN SEMICONDUCTOR MFG41 citations92
US5903499AMay 11, 1999
Method to erase a flash EEPROM using negative gate source erase followed by a high negative gate erase
TAIWAN SEMICONDUCTOR MFG21 citations92
US5838618ANov 17, 1998
Bi-modal erase method for eliminating cycling-induced flash EEPROM cell write/erase threshold closure
TAIWAN SEMICONDUCTOR MFG23 citations92
US5726933AMar 10, 1998
Clipped sine shaped waveform to reduce the cycling-induced electron trapping in the tunneling oxide of flash EEPROM
TAIWAN SEMICONDUCTOR MFG43 citations92
US6117732ASep 12, 2000
Use of a metal contact structure to increase control gate coupling capacitance for a single polysilicon non-volatile memory cell
TAIWAN SEMICONDUCTOR MFG17 citations83
US6417046B1Jul 9, 2002
Modified nitride spacer for solving charge retention issue in floating gate memory cell
TAIWAN SEMICONDUCTOR MFG12 citations73
US6303454B1Oct 16, 2001
Process for a snap-back flash EEPROM cell
TAIWAN SEMICONDUCTOR MFG14 citations73
EMEMORY TECHNOLOGY INC
10 patentsUS6920067B2Jul 19, 2005
Integrated circuit embedded with single-poly non-volatile memory
EMEMORY TECHNOLOGY INC69 citations98
US6617637B1Sep 9, 2003
Electrically erasable programmable logic device
EMEMORY TECHNOLOGY INC57 citations96
US6914825B2Jul 5, 2005
Semiconductor memory device having improved data retention
EMEMORY TECHNOLOGY INC30 citations92
US6812083B2Nov 2, 2004
Fabrication method for non-volatile memory
EMEMORY TECHNOLOGY INC25 citations92
US7447082B2Nov 4, 2008
Method for operating single-poly non-volatile memory device
EMEMORY TECHNOLOGY INC10 citations84
US6842374B2Jan 11, 2005
Method for operating N-channel electrically erasable programmable logic device
EMEMORY TECHNOLOGY INC13 citations84
US6822286B2Nov 23, 2004
Cmos-compatible read only memory and method for fabricating the same
EMEMORY TECHNOLOGY INC18 citations84
US6740556B1May 25, 2004
Method for forming EPROM with low leakage
EMEMORY TECHNOLOGY INC6 citations74
US7768059B2Aug 3, 2010
Nonvolatile single-poly memory device
EMEMORY TECHNOLOGY INC5 citations63
US7433243B2Oct 7, 2008
Operation method of non-volatile memory
EMEMORY TECHNOLOGY INC1 citations52