P

Inventor

HO MING-CHOU

TW22 patents
⚠️ This page may combine multiple inventors who share the name “HO MING-CHOU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

11 patents
US6055183AApr 25, 2000

Erase method of flash EEPROM by using snapback characteristic

TAIWAN SEMICONDUCTOR MFG54 citations96
US5862078AJan 19, 1999

Mixed mode erase method to improve flash eeprom write/erase threshold closure

TAIWAN SEMICONDUCTOR MFG56 citations95
US6110782AAug 29, 2000

Method to combine high voltage device and salicide process

TAIWAN SEMICONDUCTOR MFG32 citations92
US6049484AApr 11, 2000

Erase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate erase

TAIWAN SEMICONDUCTOR MFG43 citations92
US5949717ASep 7, 1999

Method to improve flash EEPROM cell write/erase threshold voltage closure

TAIWAN SEMICONDUCTOR MFG41 citations92
US5903499AMay 11, 1999

Method to erase a flash EEPROM using negative gate source erase followed by a high negative gate erase

TAIWAN SEMICONDUCTOR MFG21 citations92
US5838618ANov 17, 1998

Bi-modal erase method for eliminating cycling-induced flash EEPROM cell write/erase threshold closure

TAIWAN SEMICONDUCTOR MFG23 citations92
US5726933AMar 10, 1998

Clipped sine shaped waveform to reduce the cycling-induced electron trapping in the tunneling oxide of flash EEPROM

TAIWAN SEMICONDUCTOR MFG43 citations92
US6117732ASep 12, 2000

Use of a metal contact structure to increase control gate coupling capacitance for a single polysilicon non-volatile memory cell

TAIWAN SEMICONDUCTOR MFG17 citations83
US6417046B1Jul 9, 2002

Modified nitride spacer for solving charge retention issue in floating gate memory cell

TAIWAN SEMICONDUCTOR MFG12 citations73
US6303454B1Oct 16, 2001

Process for a snap-back flash EEPROM cell

TAIWAN SEMICONDUCTOR MFG14 citations73

EMEMORY TECHNOLOGY INC

10 patents

LAI TSUNG-MU

1 patent