Inventor · disambiguated record
Hui Nie
Also filed as: NIE HUI · NIE HUI-LING
71 granted patents·27 pending applications·169 citations·filing 2001–2024
98Inventor score
Top patents by PatentIndex Score
98 records- 0196US8502234B2Monolithically integrated vertical JFET and Schottky diodeKIZILYALLI ISIK C·Filed 2011·Granted Aug 6, 2013·19 cites·6 claims
- 0294US9136418B2Optoelectronic devices including heterojunction and intermediate layerNIE HUI·Filed 2012·Granted Sep 15, 2015·11 cites·12 claims
- 0392US9178099B2Methods for forming optoelectronic devices including heterojunctionNIE HUI·Filed 2012·Granted Nov 3, 2015·7 cites·14 claims
- 0491US8716078B2Method and system for a gallium nitride vertical JFET with self-aligned gate metallizationDISNEY DONALD R·Filed 2012·Granted May 6, 2014·11 cites·26 claims
- 0588US11641207B2Fast lock phase-locked loop circuit for avoiding cycle slipUNIV ZHEJIANG·Filed 2022·Granted May 2, 2023·4 cites·2 claims
- 0688US8569153B2Method and system for carbon doping control in gallium nitride based devicesBOUR DAVID P·Filed 2011·Granted Oct 29, 2013·7 cites·21 claims
- 0787US8823140B2GaN vertical bipolar transistorAVOGY INC·Filed 2012·Granted Sep 2, 2014·8 cites·21 claims
- 0886US8749015B2Method and system for fabricating floating guard rings in GaN materialsDISNEY DONALD R·Filed 2011·Granted Jun 10, 2014·6 cites·11 claims
- 0984US8698164B2Vertical GaN JFET with gate source electrodes on regrown gateDISNEY DONALD R·Filed 2011·Granted Apr 15, 2014·5 cites·20 claims
- 1081US9691921B2Textured metallic back reflectorATWATER HARRY·Filed 2010·Granted Jun 27, 2017·6 cites·40 claims
- 1181US9159784B2Aluminum gallium nitride etch stop layer for gallium nitride based devicesROMANO LINDA·Filed 2011·Granted Oct 13, 2015·4 cites·11 claims
- 1281US8716716B2Method and system for junction termination in GaN materials using conductivity modulationNIE HUI·Filed 2011·Granted May 6, 2014·4 cites·10 claims
- 1379US9716196B2Self-bypass diode function for gallium arsenide photovoltaic devicesNIE HUI·Filed 2011·Granted Jul 25, 2017·2 cites·15 claims
- 1479US9224828B2Method and system for floating guard rings in gallium nitride materialsEDWARDS ANDREW·Filed 2011·Granted Dec 29, 2015·3 cites·16 claims
- 1579US8969180B2Method and system for junction termination in GaN materials using conductivity modulationAVOGY INC·Filed 2014·Granted Mar 3, 2015·3 cites·15 claims
- 1679US8927999B2Edge termination by ion implantation in GaNKIZILYALLI ISIK C·Filed 2011·Granted Jan 6, 2015·3 cites·18 claims
- 1778US11463096B2Zero-delay phase-locked loop frequency synthesizer based on multi-stage synchronizationUNIV ZHEJIANG·Filed 2021·Granted Oct 4, 2022·1 cites·3 claims
- 1878US9184305B2Method and system for a GAN vertical JFET utilizing a regrown gateKIZILYALLI ISIK C·Filed 2011·Granted Nov 10, 2015·4 cites·7 claims
- 1978US9059199B2Method and system for a gallium nitride vertical transistorAVOGY INC·Filed 2013·Granted Jun 16, 2015·3 cites·7 claims
- 2078US8969912B2Method and system for a GaN vertical JFET utilizing a regrown channelKIZILYALLI ISIK C·Filed 2011·Granted Mar 3, 2015·4 cites·6 claims
- 2178US8592298B2Fabrication of floating guard rings using selective regrowthROMANO LINDA·Filed 2011·Granted Nov 26, 2013·5 cites·19 claims
- 2277US8946788B2Method and system for doping control in gallium nitride based devicesKIZILYALLI ISIK C·Filed 2011·Granted Feb 3, 2015·3 cites·6 claims
- 2377US8941117B2Monolithically integrated vertical JFET and Schottky diodeAVOGY INC·Filed 2013·Granted Jan 27, 2015·3 cites·6 claims
- 2477US8785975B2GAN vertical superjunction device structures and fabrication methodsNIE HUI·Filed 2012·Granted Jul 22, 2014·3 cites·9 claims
- 2576US11695088B2Self-bypass diode function for gallium arsenide photovoltaic devicesUTICA LEASECO LLC·Filed 2021·Granted Jul 4, 2023·0 cites·18 claims
- 2676US9136116B2Method and system for formation of P-N junctions in gallium nitride based electronicsBOUR DAVID P·Filed 2011·Granted Sep 15, 2015·3 cites·15 claims
- 2776US8981432B2Method and system for gallium nitride electronic devices using engineered substratesNIE HUI·Filed 2012·Granted Mar 17, 2015·3 cites·15 claims
- 2875USD1054025SNasal dilatorNIE HUI·Filed 2024·Granted Dec 10, 2024·3 cites·1 claims
- 2975US10319829B2Method and system for in-situ etch and regrowth in gallium nitride based devicesNEXGEN POWER SYSTEMS INC·Filed 2017·Granted Jun 11, 2019·1 cites·17 claims
- 3075US8916871B2Bondable top metal contacts for gallium nitride power devicesALVAREZ BRIAN JOEL·Filed 2012·Granted Dec 23, 2014·5 cites·10 claims
- 3175US8829574B2Method and system for a GaN vertical JFET with self-aligned source and gateDISNEY DONALD R·Filed 2011·Granted Sep 9, 2014·2 cites·6 claims
- 3273US8841708B2Method and system for a GAN vertical JFET with self-aligned source metallizationDISNEY DONALD R·Filed 2012·Granted Sep 23, 2014·3 cites·7 claims
- 3372US9093395B2Method and system for local control of defect density in gallium nitride based electronicsBOUR DAVID P·Filed 2011·Granted Jul 28, 2015·2 cites·23 claims
- 3472US8741707B2Method and system for fabricating edge termination structures in GaN materialsDISNEY DONALD R·Filed 2011·Granted Jun 3, 2014·3 cites·28 claims
- 3571US9196679B2Schottky diode with buried layer in GaN materialsAVOGY INC·Filed 2015·Granted Nov 24, 2015·1 cites·22 claims
- 3671US8822311B2Method of fabricating a GaN P-i-N diode using implantationKIZILYALLI ISIK C·Filed 2011·Granted Sep 2, 2014·2 cites·19 claims
- 3770US10916676B2Optoelectronic devices including heterojunction and intermediate layerALTA DEVICES INC·Filed 2018·Granted Feb 9, 2021·0 cites·20 claims
- 3870US8643134B2GaN-based Schottky barrier diode with field plateRAJ MADHAN·Filed 2011·Granted Feb 4, 2014·3 cites·7 claims
- 3967US9318331B2Method and system for diffusion and implantation in gallium nitride based devicesAVOGY INC·Filed 2014·Granted Apr 19, 2016·1 cites·20 claims
- 4067US9171751B2Method and system for fabricating floating guard rings in GaN materialsAVOGY INC·Filed 2014·Granted Oct 27, 2015·1 cites·17 claims
- 4167US8853063B2Method and system for carbon doping control in gallium nitride based devicesAVOGY INC·Filed 2013·Granted Oct 7, 2014·1 cites·15 claims
- 4266US11211506B2Self-bypass diode function for gallium arsenide photovoltaic devicesUTICA LEASECO LLC·Filed 2017·Granted Dec 28, 2021·0 cites·8 claims
- 4366US9123533B2Method and system for in-situ etch and regrowth in gallium nitride based devicesBOUR DAVID P·Filed 2012·Granted Sep 1, 2015·1 cites·13 claims
- 4465US9171900B2Method of fabricating a gallium nitride P-i-N diode using implantationAVOGY INC·Filed 2014·Granted Oct 27, 2015·1 cites·20 claims
- 4565US9171937B2Monolithically integrated vertical JFET and Schottky diodeAVOGY INC·Filed 2014·Granted Oct 27, 2015·1 cites·14 claims
- 4662US9159799B2Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layerAVOGY INC·Filed 2013·Granted Oct 13, 2015·1 cites·12 claims
- 4760US9954131B2Optoelectronic devices including heterojunction and intermediate layerALTA DEVICES INC·Filed 2015·Granted Apr 24, 2018·0 cites·16 claims
- 4859US9330918B2Edge termination by ion implantation in gallium nitrideAVOGY INC·Filed 2014·Granted May 3, 2016·0 cites·12 claims
- 4959US8778788B2Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diodeEDWARDS ANDREW P·Filed 2011·Granted Jul 15, 2014·1 cites·15 claims
- 5059US2012104460A1Optoelectronic devices including heterojunctionNIE HUI·Filed 2010·Application pending·0 cites
Showing the top 50 of 98 patent records by PatentIndex Score.
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