Inventor
KYUNG KYE-HYUN
KR61 patents
⚠️ This page may combine multiple inventors who share the name “KYUNG KYE-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
48 patentsUS6877079B2Apr 5, 2005
Memory system having point-to-point bus configuration
SAMSUNG ELECTRONICS CO LTD91 citations98
US6862249B2Mar 1, 2005
Devices and methods for controlling active termination resistors in a memory system
SAMSUNG ELECTRONICS CO LTD79 citations98
US6834014B2Dec 21, 2004
Semiconductor memory systems, methods, and devices for controlling active termination
SAMSUNG ELECTRONICS CO LTD89 citations98
US6754132B2Jun 22, 2004
Devices and methods for controlling active termination resistors in a memory system
SAMSUNG ELECTRONICS CO LTD112 citations98
US6940765B2Sep 6, 2005
Repair apparatus and method for semiconductor memory device to be selectively programmed for wafer-level test or post package test
SAMSUNG ELECTRONICS CO LTD61 citations96
US5982222ANov 9, 1999
High voltage generating circuit for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD74 citations96
US7426145B2Sep 16, 2008
Synchronous semiconductor memory device having on-die termination circuit and on-die termination method
SAMSUNG ELECTRONICS CO LTD19 citations93
US7313715B2Dec 25, 2007
Memory system having stub bus configuration
SAMSUNG ELECTRONICS CO LTD31 citations93
US7239560B2Jul 3, 2007
Synchronous semiconductor memory device having on-die termination circuit and on-die termination method
SAMSUNG ELECTRONICS CO LTD25 citations93
US7170818B2Jan 30, 2007
Semiconductor memory device and module for high frequency operation
SAMSUNG ELECTRONICS CO LTD19 citations93
US7124250B2Oct 17, 2006
Memory module device for use in high-frequency operation
SAMSUNG ELECTRONICS CO LTD33 citations93
US7093076B2Aug 15, 2006
Memory system having two-way ring topology and memory device and memory module for ring-topology memory system
SAMSUNG ELECTRONICS CO LTD40 citations93
US6570803B2May 27, 2003
Memory system capable of increasing utilization efficiency of semiconductor memory device and method of refreshing the semiconductor memory device
SAMSUNG ELECTRONICS CO LTD52 citations93
US5783935AJul 21, 1998
Reference voltage generator and method utilizing clamping
SAMSUNG ELECTRONICS CO LTD29 citations93
US7539826B2May 26, 2009
System, device, and method for improved mirror mode operation of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD19 citations92
US7457189B2Nov 25, 2008
Integrated circuit memory devices that support selective mode register set commands and related methods
SAMSUNG ELECTRONICS CO LTD26 citations92
US7277356B2Oct 2, 2007
Methods of controlling memory modules that support selective mode register set commands
SAMSUNG ELECTRONICS CO LTD21 citations92
US7102958B2Sep 5, 2006
Integrated circuit memory devices that support selective mode register set commands and related memory modules, memory controllers, and methods
SAMSUNG ELECTRONICS CO LTD27 citations92
US6151263ANov 21, 2000
Integrated circuit memory devices having data input and output lines extending along the column direction
SAMSUNG ELECTRONICS CO LTD19 citations92
US6486651B1Nov 26, 2002
Integrated circuit devices having a delay locked loop that is configurable for high-frequency operation during test and methods of operating same
SAMSUNG ELECTRONICS CO LTD36 citations90
US6046947AApr 4, 2000
Integrated circuit memory devices having direct access mode test capability and methods of testing same
SAMSUNG ELECTRONICS CO LTD22 citations90
US6489832B1Dec 3, 2002
Chip information output circuit
SAMSUNG ELECTRONICS CO LTD25 citations89
US7804720B2Sep 28, 2010
Integrated circuit memory devices including mode registers set using a data input/output bus
SAMSUNG ELECTRONICS CO LTD10 citations84
US7636273B2Dec 22, 2009
Integrated circuit memory devices that support selective mode register set commands
SAMSUNG ELECTRONICS CO LTD9 citations84
US7457192B2Nov 25, 2008
Semiconductor memory device and module for high frequency operation
SAMSUNG ELECTRONICS CO LTD11 citations84
US7447084B2Nov 4, 2008
Semiconductor memory device and method of supplying wordline voltage thereof
SAMSUNG ELECTRONICS CO LTD12 citations84
US7369445B2May 6, 2008
Methods of operating memory systems including memory devices set to different operating modes and related systems
SAMSUNG ELECTRONICS CO LTD15 citations84
US7045892B2May 16, 2006
Stack package of semiconductor device
SAMSUNG ELECTRONICS CO LTD15 citations84
US6956780B2Oct 18, 2005
Semiconductor memory device having direct sense amplifier implemented in hierarchical input/output line architecture
SAMSUNG ELECTRONICS CO LTD15 citations84
US6667916B2Dec 23, 2003
Mode control circuit for semiconductor device and semiconductor memory device having the mode control circuit
SAMSUNG ELECTRONICS CO LTD15 citations84
US6438015B2Aug 20, 2002
Semiconductor memory device and memory system for improving bus efficiency
SAMSUNG ELECTRONICS CO LTD17 citations84
US6078536AJun 20, 2000
Packet type integrated circuit memory devices having pins assigned direct test mode and associated methods
SAMSUNG ELECTRONICS CO LTD19 citations83
US6141271AOct 31, 2000
Circuits for testing memory devices having direct access test mode and methods for testing the same
SAMSUNG ELECTRONICS CO LTD18 citations82
US6549444B2Apr 15, 2003
Memory device with prefetched data ordering distributed in prefetched data path logic, circuit, and method of ordering prefetched data
SAMSUNG ELECTRONICS CO LTD7 citations74
USRE37753EJun 18, 2002
Semiconductor memory device and read and write methods thereof
SAMSUNG ELECTRONICS CO LTD10 citations74
US5986953ANov 16, 1999
Input/output circuits and methods for testing integrated circuit memory devices
SAMSUNG ELECTRONICS CO LTD9 citations74
US5650977AJul 22, 1997
Integrated circuit memory device including banks of memory cells and related methods
SAMSUNG ELECTRONICS CO LTD14 citations74
US9817434B2Nov 14, 2017
Memory system controlling peak current generation for a plurality of memories by synchronizing internal clock of each memory with a processor clock at different times to avoid peak current generation period overlapping
SAMSUNG ELECTRONICS CO LTD2 citations73
US7894260B2Feb 22, 2011
Synchronous semiconductor memory device having on-die termination circuit and on-die termination method
SAMSUNG ELECTRONICS CO LTD3 citations63
US7787283B2Aug 31, 2010
Devices and methods for controlling active termination resistors in a memory system
SAMSUNG ELECTRONICS CO LTD1 citations63
US7616473B2Nov 10, 2009
Devices and methods for controlling active termination resistors in a memory system
SAMSUNG ELECTRONICS CO LTD3 citations63
US7285975B2Oct 23, 2007
Termination providing apparatus mounted on memory module or socket and memory system using the apparatus
SAMSUNG ELECTRONICS CO LTD3 citations63
US6584028B2Jun 24, 2003
Memory system and semiconductor memory device for enhancing bus efficiency and refresh method of the semiconductor memory device
SAMSUNG ELECTRONICS CO LTD6 citations63
US6304500B1Oct 16, 2001
Integrated circuit memory devices having data input and output lines extending in the column direction, and circuits and methods for repairing faulty cells
SAMSUNG ELECTRONICS CO LTD5 citations63
US7961018B2Jun 14, 2011
Semiconductor device including delay locked loop having periodically activated replica path
SAMSUNG ELECTRONICS CO LTD3 citations62
US7289379B2Oct 30, 2007
Memory devices and methods of operation thereof using interdependent sense amplifier control
SAMSUNG ELECTRONICS CO LTD3 citations54
USRE45378EFeb 17, 2015
Method for receiving data
SAMSUNG ELECTRONICS CO LTD0 citations52
USRE45366EFeb 10, 2015
Method of writing data to a memory
SAMSUNG ELECTRONICS CO LTD0 citations52
KIM BO-GEUN
1 patentKYUNG KYE-HYUN
1 patentShowing the top 50 of 61 patents by PatentIndex Score.