Inventor · disambiguated record
Andrew P. Edwards
Also filed as: EDWARDS ANDREW · EDWARDS ANDREW P · Edwards Andrew Paul
69 granted patents·25 pending applications·136 citations·filing 2005–2025
98Inventor score
Files withAVOGY INC29SEMICONDUCTOR COMPONENTS IND LLC19NEXGEN POWER SYSTEMS INC12KIZILYALLI ISIK C7ROMANO LINDA4
Top patents by PatentIndex Score
94 records- 0196US11315884B2Method and system for fabricating fiducials using selective area growthNEXGEN POWER SYSTEMS INC·Filed 2020·Granted Apr 26, 2022·5 cites·20 claims
- 0296US8502234B2Monolithically integrated vertical JFET and Schottky diodeKIZILYALLI ISIK C·Filed 2011·Granted Aug 6, 2013·19 cites·6 claims
- 0395US11929440B2Fabrication method for JFET with implant isolationNEXGEN POWER SYSTEMS INC·Filed 2023·Granted Mar 12, 2024·2 cites·20 claims
- 0494US12155204B2Method and system for fin-based voltage clampSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Nov 26, 2024·2 cites·20 claims
- 0594US11335810B2Method and system for fabrication of a vertical fin-based field effect transistorNEXGEN POWER SYSTEMS INC·Filed 2020·Granted May 17, 2022·3 cites·14 claims
- 0691US11637209B2JFET with implant isolationNEXGEN POWER SYSTEMS INC·Filed 2020·Granted Apr 25, 2023·2 cites·16 claims
- 0787US8823140B2GaN vertical bipolar transistorAVOGY INC·Filed 2012·Granted Sep 2, 2014·8 cites·21 claims
- 0886US8749015B2Method and system for fabricating floating guard rings in GaN materialsDISNEY DONALD R·Filed 2011·Granted Jun 10, 2014·6 cites·11 claims
- 0984US12274086B2Fabrication method for JFET with implant isolationSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Granted Apr 8, 2025·0 cites·17 claims
- 1083US8026596B2Thermal designs of packaged gallium nitride material devices and methods of packagingINT RECTIFIER CORP·Filed 2007·Granted Sep 27, 2011·13 cites·16 claims
- 1181US12272654B2Method and system for fabricating fiducials using selective area growthSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Granted Apr 8, 2025·0 cites·20 claims
- 1281US9159784B2Aluminum gallium nitride etch stop layer for gallium nitride based devicesROMANO LINDA·Filed 2011·Granted Oct 13, 2015·4 cites·11 claims
- 1381US8716716B2Method and system for junction termination in GaN materials using conductivity modulationNIE HUI·Filed 2011·Granted May 6, 2014·4 cites·10 claims
- 1480US7338826B2Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTsUS NAVY·Filed 2005·Granted Mar 4, 2008·11 cites·12 claims
- 1579US9224828B2Method and system for floating guard rings in gallium nitride materialsEDWARDS ANDREW·Filed 2011·Granted Dec 29, 2015·3 cites·16 claims
- 1679US8969180B2Method and system for junction termination in GaN materials using conductivity modulationAVOGY INC·Filed 2014·Granted Mar 3, 2015·3 cites·15 claims
- 1779US8927999B2Edge termination by ion implantation in GaNKIZILYALLI ISIK C·Filed 2011·Granted Jan 6, 2015·3 cites·18 claims
- 1879US2025212467A1Fabrication method for jfet with implant isolationSEMICONDUCTOR COMPONENTS IND LLC·Filed 2025·Application pending·0 cites
- 1978US9184305B2Method and system for a GAN vertical JFET utilizing a regrown gateKIZILYALLI ISIK C·Filed 2011·Granted Nov 10, 2015·4 cites·7 claims
- 2078US9059199B2Method and system for a gallium nitride vertical transistorAVOGY INC·Filed 2013·Granted Jun 16, 2015·3 cites·7 claims
- 2178US8969912B2Method and system for a GaN vertical JFET utilizing a regrown channelKIZILYALLI ISIK C·Filed 2011·Granted Mar 3, 2015·4 cites·6 claims
- 2278US8592298B2Fabrication of floating guard rings using selective regrowthROMANO LINDA·Filed 2011·Granted Nov 26, 2013·5 cites·19 claims
- 2377US8946788B2Method and system for doping control in gallium nitride based devicesKIZILYALLI ISIK C·Filed 2011·Granted Feb 3, 2015·3 cites·6 claims
- 2477US8941117B2Monolithically integrated vertical JFET and Schottky diodeAVOGY INC·Filed 2013·Granted Jan 27, 2015·3 cites·6 claims
- 2577US8785975B2GAN vertical superjunction device structures and fabrication methodsNIE HUI·Filed 2012·Granted Jul 22, 2014·3 cites·9 claims
- 2676US12125914B2Method and system for fabrication of a vertical fin-based field effect transistorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 2776US9136116B2Method and system for formation of P-N junctions in gallium nitride based electronicsBOUR DAVID P·Filed 2011·Granted Sep 15, 2015·3 cites·15 claims
- 2875US12334352B2Method and system for etch depth control in III-V semiconductor devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 2975US2025031416A1Coupled guard rings for edge terminationSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 3074US2024274602A1Self-aligned isolation for self-aligned contacts for vertical fetsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 3174US2025055276A1Method and system for a fin-based voltage clampSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 3274US2025006784A1Method and system of junction termination extension in high voltage semiconductor devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 3373US11935838B2Method and system for fabricating fiducials using selective area growthNEXGEN POWER SYSTEMS INC·Filed 2022·Granted Mar 19, 2024·0 cites·21 claims
- 3472US12262557B2Methods and systems to improve uniformity in power FET arraysSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Mar 25, 2025·0 cites·12 claims
- 3572US9093395B2Method and system for local control of defect density in gallium nitride based electronicsBOUR DAVID P·Filed 2011·Granted Jul 28, 2015·2 cites·23 claims
- 3672US8741707B2Method and system for fabricating edge termination structures in GaN materialsDISNEY DONALD R·Filed 2011·Granted Jun 3, 2014·3 cites·28 claims
- 3771US11735671B2Method and system for fabrication of a vertical fin-based field effect transistorNEXGEN POWER SYSTEMS INC·Filed 2022·Granted Aug 22, 2023·0 cites·12 claims
- 3871US9196679B2Schottky diode with buried layer in GaN materialsAVOGY INC·Filed 2015·Granted Nov 24, 2015·1 cites·22 claims
- 3971US8822311B2Method of fabricating a GaN P-i-N diode using implantationKIZILYALLI ISIK C·Filed 2011·Granted Sep 2, 2014·2 cites·19 claims
- 4070US12484294B2Vertical fin-based field effect transistor (FinFET) with neutralized fin tipsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 4170US12224344B2Method and system for control of sidewall orientation in vertical gallium nitride field effect transistorsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Feb 11, 2025·0 cites·14 claims
- 4270US8643134B2GaN-based Schottky barrier diode with field plateRAJ MADHAN·Filed 2011·Granted Feb 4, 2014·3 cites·7 claims
- 4369US2025194236A1Method and system to improve uniformity in power fet arraysSEMICONDUCTOR COMPONENTS IND LLC·Filed 2025·Application pending·0 cites
- 4468US2023420547A1Vertical gallium nitride based fets with regrown source contactsNEXGEN POWER SYSTEMS INC·Filed 2023·Application pending·0 cites
- 4567US12136645B2Coupled guard rings for edge terminationSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Nov 5, 2024·0 cites·13 claims
- 4667US11996407B2Self-aligned isolation for self-aligned contacts for vertical FETSSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted May 28, 2024·0 cites·17 claims
- 4767US9318331B2Method and system for diffusion and implantation in gallium nitride based devicesAVOGY INC·Filed 2014·Granted Apr 19, 2016·1 cites·20 claims
- 4867US9171751B2Method and system for fabricating floating guard rings in GaN materialsAVOGY INC·Filed 2014·Granted Oct 27, 2015·1 cites·17 claims
- 4967US9006800B2Ingan ohmic source contacts for vertical power devicesROMANO LINDA·Filed 2011·Granted Apr 14, 2015·2 cites·7 claims
- 5066US9679762B2Access conductivity enhanced high electron mobility transistorTOSHIBA CORP·Filed 2015·Granted Jun 13, 2017·1 cites·23 claims
Showing the top 50 of 94 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →