Inventor · disambiguated record
Andrew D. Koehler
Also filed as: KOEHLER ANDREW D
23 granted patents·4 pending applications·53 citations·filing 2014–2025
93Inventor score
Top patents by PatentIndex Score
27 records- 0194US9006791B2III-nitride P-channel field effect transistor with hole carriers in the channelKUB FRANCIS J·Filed 2014·Granted Apr 14, 2015·12 cites·15 claims
- 0292US11996840B1Light controlled switch moduleUS GOV SEC NAVY·Filed 2023·Granted May 28, 2024·2 cites·20 claims
- 0392US9196614B2Inverted III-nitride P-channel field effect transistor with hole carriers in the channelKUB FRANCIS J·Filed 2015·Granted Nov 24, 2015·7 cites·15 claims
- 0485US9466684B2Transistor with diamond gateUS NAVY·Filed 2016·Granted Oct 11, 2016·4 cites·7 claims
- 0585US9236432B2Graphene base transistor with reduced collector areaKUB FRANCIS J·Filed 2014·Granted Jan 12, 2016·6 cites·14 claims
- 0683US9331163B2Transistor with diamond gateKOEHLER ANDREW D·Filed 2014·Granted May 3, 2016·8 cites·11 claims
- 0780US9960266B2Damage-free plasma-enhanced CVD passivation of AlGaN/GaN high electron mobility transistorsUS NAVY·Filed 2017·Granted May 1, 2018·3 cites·27 claims
- 0880US2025338640A1Low resistance light controlled semiconductor switch (lcss)US GOV SEC NAVY·Filed 2025·Application pending·0 cites
- 0978US12376388B2Low resistance photoconductive semiconductor switch (PCSS)US GOV SEC NAVY·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 1078US9590081B2Method of making a graphene base transistor with reduced collector areaUS NAVY·Filed 2015·Granted Mar 7, 2017·2 cites·4 claims
- 1178US9490356B2Growth of high-performance III-nitride transistor passivation layer for GaN electronicsUS NAVY·Filed 2016·Granted Nov 8, 2016·2 cites·17 claims
- 1277US9275998B2Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channelKUB FRANCIS J·Filed 2014·Granted Mar 1, 2016·2 cites·19 claims
- 1373US10777644B2Heterojunction devices and methods for fabricating the sameUS GOV SEC NAVY·Filed 2018·Granted Sep 15, 2020·1 cites·15 claims
- 1472US9196703B2Selective deposition of diamond in thermal viasNORTHROP GRUMMAN SYSTEMS CORP·Filed 2014·Granted Nov 24, 2015·3 cites·20 claims
- 1568US10312175B1Diamond air bridge for thermal management of high power devicesUS NAVY·Filed 2018·Granted Jun 4, 2019·1 cites·14 claims
- 1665US11342420B2Heterojunction devices and methods for fabricating the sameUS GOV SEC NAVY·Filed 2020·Granted May 24, 2022·0 cites·16 claims
- 1760US11634834B2Diamond on nanopatterned substrateUS GOV SEC NAVY·Filed 2021·Granted Apr 25, 2023·0 cites·7 claims
- 1856US10158009B2Method of making a graphene base transistor with reduced collector areaUS NAVY·Filed 2017·Granted Dec 18, 2018·0 cites·3 claims
- 1953US10424643B2Diamond air bridge for thermal management of high power devicesUS GOV SEC NAVY·Filed 2019·Granted Sep 24, 2019·0 cites·9 claims
- 2053US2025300039A1Electronic Devices Including Phase-Change MaterialsUS GOV SEC NAVY·Filed 2025·Application pending·0 cites
- 2152US11131039B2Diamond on nanopatterned substrateUS GOV SEC NAVY·Filed 2019·Granted Sep 28, 2021·0 cites·7 claims
- 2250US12439653B2Multi-layer hybrid edge termination for III-N power devicesUS GOV SEC NAVY·Filed 2022·Granted Oct 7, 2025·0 cites·11 claims
- 2350US10229839B2Transition metal-bearing capping film for group III-nitride devicesUS NAVY·Filed 2017·Granted Mar 12, 2019·0 cites·24 claims
- 2450US10002958B2Diamond on III-nitride deviceUS NAVY·Filed 2017·Granted Jun 19, 2018·0 cites·20 claims
- 2548US2014335666A1Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN ElectronicsKOEHLER ANDREW D·Filed 2014·Application pending·0 cites
- 2647US9991354B2Metal nitride alloy contact for semiconductorUS NAVY·Filed 2017·Granted Jun 5, 2018·0 cites·20 claims
- 2742US2019305157A1PhotodetectorUS GOV SEC NAVY·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →