Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics

Abstract

Methods for forming a high-quality III-nitride passivation layer on an AlGaN/GaN HEMT. A III-nitride passivation layer is formed on the surface of an AlGaN/GaN HEMT by means of atomic layer epitaxy (ALE), either before or after deposition of a gate metal electrode on the AlGaN barrier layer. Depending on the gate metal and/or the passivation material used, the III-nitride passivation layer can be formed by ALE at temperatures between about 300° C. and about 850° C. In a specific embodiment, the III-nitride passivation layer can be an AlN layer formed by ALE at about 550° C. after deposition of a Schottky metal gate electrode. The III-nitride passivation layer can be grown so as to conformally cover the entire device, providing a hermetic seal that protects the against environmental conditions.

What is claimed is: 
     
         1 . A method for forming a passivated AlGaN/GaN HEMT, comprising:
 forming a GaN buffer/channel layer on a substrate;   forming an AlGaN barrier layer on the GaN buffer/channel layer;   etching mesa isolation trenches in the AlGaN barrier layer to define an area on an upper surface of the barrier layer on which a source, a drain, and a gate element of the HEMT are to be formed;   forming the source, gate, and drain elements on the surface of the AlGaN barrier layer to form an AlGaN/GaN HEMT;   subjecting the AlGaN/GaN HEMT to an ex situ cleaning to prepare the AlGaN/GaN HEMT for growth of a III-nitride passivation layer thereon;   placing the cleaned AlGaN/GaN HEMT into an atomic layer epitaxy (ALE) reaction chamber and subjecting the AlGaN/GaN HEMT to an in situ cleaning to further prepare the AlGaN/GaN HEMT for growth of the III-nitride passivation layer thereon; and   growing the III-nitride passivation layer on the AlGaN/GaN HEMT by ALE at a temperature of about 300° C. to about 850° C. to form a passivated AlGaN/GaN HEMT.   
     
     
         2 . The method according to  claim 1 , wherein the III-nitride passivation layer comprises a relaxed III-nitride material. 
     
     
         3 . The method according to  claim 1 , wherein the III-nitride passivation layer comprises a non-relaxed III-nitride material. 
     
     
         4 . The method according to  claim 1 , wherein the III-nitride passivation layer is an AlN layer grown by ALE at a temperature of about 550° C. 
     
     
         5 . The method according to  claim 1 , wherein the III-nitride passivation layer is grown to a thickness of about 0.5 nm to about 300 nm. 
     
     
         6 . The method according to  claim 1 , wherein the III-nitride passivation layer forms a conformal coating on the AlGaN/GaN HEMT. 
     
     
         7 . The method according to  claim 1 , further comprising depositing a GaN cap layer on an upper surface of the III-nitride passivation layer. 
     
     
         8 . The method according to  claim 1 , further comprising depositing a layer of dielectric material on the AlGaN/GaN HEMT before growth of the III-nitride passivation layer thereon. 
     
     
         9 . A method for forming a passivated AlGaN/GaN HEMT, comprising:
 forming a GaN buffer/channel layer on a substrate;   forming an AlGaN barrier layer on the GaN buffer/channel layer to form an AlGaN/GaN structure;   etching mesa isolation trenches in the AlGaN barrier layer to define an area on an upper surface of the barrier layer on which a source, a drain, and a gate element of a HEMT are to be formed;   subjecting the AlGaN/GaN structure to an ex situ cleaning to prepare the AlGaN/GaN structure for growth of a III-nitride passivation layer thereon;   placing the cleaned AlGaN/GaN structure into an atomic layer epitaxy (ALE) reaction chamber and subjecting the AlGaN/GaN structure to an in situ cleaning to further prepare the AlGaN/GaN structure for growth of the III-nitride passivation layer thereon;   growing the III-nitride passivation layer on an upper surface of the AlGaN barrier layer by ALE at a temperature of about 300° C. to about 850° C. to form a passivated AlGaN/GaN structure;   etching the III-nitride passivation layer to expose portions of the AlGaN surface for deposition of materials for source, a gate, and a drain electrodes; and   forming the source, gate, and drain electrodes on the portions of the AlGaN surface defined by the etched passivation layer.   
     
     
         10 . The method according to  claim 1 , wherein the III-nitride passivation layer is grown to a thickness of about 0.5 nm to about 300 nm. 
     
     
         11 . The method according to  claim 9 , wherein the III-nitride passivation layer comprises a relaxed III-nitride material. 
     
     
         12 . The method according to  claim 9 , wherein the III-nitride passivation layer comprises a non-relaxed III-nitride material. 
     
     
         13 . The method according to  claim 9 , wherein the III-nitride passivation material is AlN. 
     
     
         14 . The method according to  claim 9 , wherein the III-nitride passivation layer is etched in a Cl 2  plasma. 
     
     
         15 . The method according to  claim 9 , wherein the III-nitride passivation layer is etched in a heated AZ400K developer. 
     
     
         16 . The method according to  claim 9 , wherein the gate metal is a Ni/Au Schottky metal. 
     
     
         17 . The method according to  claim 9 , wherein the gate metal is deposited by electron beam evaporation. 
     
     
         18 . The method according to  claim 9 , wherein the gate metal is patterned by liftoff. 
     
     
         19 . The method according to  claim 9 , further comprising depositing a layer of dielectric material on the AlGaN/GaN HEMT before growth of the III-nitride passivation layer thereon. 
     
     
         20 . A method for forming a passivated AlGaN/GaN HEMT, comprising:
 forming a GaN buffer/channel layer on a substrate;   forming an AlGaN barrier layer on the GaN buffer/channel layer to form an AlGaN/GaN structure;   etching mesa isolation trenches in the AlGaN barrier layer to define an area on an upper surface of the barrier layer on which a source, a drain, and a gate element of a HEMT are to be formed;   forming the source and drain elements on the surface of the AlGaN barrier layer;   subjecting the AlGaN/GaN structure to an ex situ cleaning to prepare the AlGaN/GaN structure for growth of a III-nitride passivation layer thereon;   placing the cleaned AlGaN/GaN structure into an atomic layer epitaxy (ALE) reaction chamber and subjecting the AlGaN/GaN structure to an in situ cleaning to further prepare the AlGaN/GaN structure for growth of the III-nitride passivation layer thereon;   growing the III-nitride passivation layer on an upper surface of the AlGaN barrier layer by ALE at a temperature of about 300° C. to about 850° C. to form a passivated AlGaN/GaN structure;   etching the III-nitride passivation layer to expose a portions of the AlGaN surface for deposition of a gate electrode thereon; and   forming gate electrode on the portions of the AlGaN surface defined by the etched passivation layer.   
     
     
         21 . The method according to  claim 20 , wherein the III-nitride passivation layer comprises a relaxed III-nitride material. 
     
     
         22 . The method according to  claim 20 , wherein the III-nitride passivation layer comprises a non-relaxed III-nitride material. 
     
     
         23 . The method according to  claim 20 , wherein the III-nitride passivation material is AlN. 
     
     
         24 . The method according to  claim 20 , wherein the III-nitride passivation layer is grown to a thickness of about 0.5 nm to about 300 nm. 
     
     
         25 . The method according to  claim 20 , further comprising depositing a layer of dielectric material on the AlGaN/GaN HEMT before growth of the III-nitride passivation layer thereon.