Inventor · disambiguated record
Andrew Nguyen
Also filed as: NGUYEN ANDREW · NGUYEN ANDREW N
114 granted patents·43 pending applications·8,781 citations·filing 2000–2024
99Inventor score
Top patents by PatentIndex Score
157 records- 0199US7695590B2Chemical vapor deposition plasma reactor having plural ion shower gridsAPPLIED MATERIALS INC·Filed 2004·Granted Apr 13, 2010·195 cites·31 claims
- 0299US7429532B2Semiconductor substrate process using an optically writable carbon-containing maskAPPLIED MATERIALS INC·Filed 2005·Granted Sep 30, 2008·539 cites·18 claims
- 0399US7422775B2Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Sep 9, 2008·535 cites·17 claims
- 0499US7393765B2Low temperature CVD process with selected stress of the CVD layer on CMOS devicesAPPLIED MATERIALS INC·Filed 2007·Granted Jul 1, 2008·562 cites·16 claims
- 0599US7335611B2Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layerAPPLIED MATERIALS INC·Filed 2005·Granted Feb 26, 2008·535 cites·20 claims
- 0699US7323401B2Semiconductor substrate process using a low temperature deposited carbon-containing hard maskAPPLIED MATERIALS INC·Filed 2005·Granted Jan 29, 2008·580 cites·17 claims
- 0799US7312148B2Copper barrier reflow process employing high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Dec 25, 2007·537 cites·21 claims
- 0899US7312162B2Low temperature plasma deposition process for carbon layer depositionAPPLIED MATERIALS INC·Filed 2005·Granted Dec 25, 2007·544 cites·19 claims
- 0999US7109098B1Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Sep 19, 2006·551 cites·15 claims
- 1099US6917755B2Substrate supportAPPLIED MATERIALS INC·Filed 2003·Granted Jul 12, 2005·493 cites·92 claims
- 1198US10580620B2Symmetric plasma process chamberAPPLIED MATERIALS INC·Filed 2016·Granted Mar 3, 2020·38 cites·17 claims
- 1298US10546728B2Symmetric plasma process chamberAPPLIED MATERIALS INC·Filed 2016·Granted Jan 28, 2020·39 cites·11 claims
- 1398US10535502B2Symmetric plasma process chamberAPPLIED MATERIALS INC·Filed 2016·Granted Jan 14, 2020·35 cites·14 claims
- 1498US10453656B2Symmetric plasma process chamberAPPLIED MATERIALS INC·Filed 2016·Granted Oct 22, 2019·36 cites·15 claims
- 1598US9741546B2Symmetric plasma process chamberAPPLIED MATERIALS INC·Filed 2012·Granted Aug 22, 2017·385 cites·17 claims
- 1698US9287095B2Semiconductor system assemblies and methods of operationAPPLIED MATERIALS INC·Filed 2013·Granted Mar 15, 2016·153 cites·17 claims
- 1798US8496756B2Methods for processing substrates in process systems having shared resourcesCRUSE JAMES P·Filed 2010·Granted Jul 30, 2013·518 cites·20 claims
- 1898US7291360B2Chemical vapor deposition plasma process using plural ion shower gridsAPPLIED MATERIALS INC·Filed 2004·Granted Nov 6, 2007·186 cites·62 claims
- 1998US7244474B2Chemical vapor deposition plasma process using an ion shower gridAPPLIED MATERIALS INC·Filed 2004·Granted Jul 17, 2007·195 cites·70 claims
- 2098US7094670B2Plasma immersion ion implantation processAPPLIED MATERIALS INC·Filed 2005·Granted Aug 22, 2006·79 cites·23 claims
- 2198US6348126B1Externally excited torroidal plasma sourceAPPLIED MATERIALS INC·Filed 2000·Granted Feb 19, 2002·121 cites·31 claims
- 2297US7465478B2Plasma immersion ion implantation processAPPLIED MATERIALS INC·Filed 2005·Granted Dec 16, 2008·39 cites·18 claims
- 2397US7291545B2Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2005·Granted Nov 6, 2007·73 cites·20 claims
- 2497US7292428B2Electrostatic chuck with smart lift-pin mechanism for a plasma reactorAPPLIED MATERIALS INC·Filed 2005·Granted Nov 6, 2007·57 cites·20 claims
- 2597US6939434B2Externally excited torroidal plasma source with magnetic control of ion distributionAPPLIED MATERIALS INC·Filed 2002·Granted Sep 6, 2005·72 cites·48 claims
- 2697US6893907B2Fabrication of silicon-on-insulator structure using plasma immersion ion implantationAPPLIED MATERIALS INC·Filed 2004·Granted May 17, 2005·127 cites·59 claims
- 2797US6551446B1Externally excited torroidal plasma source with a gas distribution plateAPPLIED MATERIALS INC·Filed 2000·Granted Apr 22, 2003·96 cites·9 claims
- 2897US6410449B1Method of processing a workpiece using an externally excited torroidal plasma sourceAPPLIED MATERIALS INC·Filed 2000·Granted Jun 25, 2002·88 cites·8 claims
- 2996US7968469B2Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformityAPPLIED MATERIALS INC·Filed 2007·Granted Jun 28, 2011·46 cites·26 claims
- 3096US7780866B2Method of plasma confinement for enhancing magnetic control of plasma radial distributionAPPLIED MATERIALS INC·Filed 2007·Granted Aug 24, 2010·40 cites·20 claims
- 3196US7288491B2Plasma immersion ion implantation processAPPLIED MATERIALS INC·Filed 2005·Granted Oct 30, 2007·41 cites·22 claims
- 3296US7183177B2Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancementAPPLIED MATERIALS INC·Filed 2004·Granted Feb 27, 2007·119 cites·27 claims
- 3395US9123762B2Substrate support with symmetrical feed structureLIN XING·Filed 2010·Granted Sep 1, 2015·40 cites·19 claims
- 3495US7666464B2RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactorAPPLIED MATERIALS INC·Filed 2004·Granted Feb 23, 2010·63 cites·39 claims
- 3595US7137354B2Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Nov 21, 2006·63 cites·79 claims
- 3695US7037813B2Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted May 2, 2006·76 cites·86 claims
- 3795US6494986B1Externally excited multiple torroidal plasma sourceAPPLIED MATERIALS INC·Filed 2000·Granted Dec 17, 2002·65 cites·32 claims
- 3895US6468388B1Reactor chamber for an externally excited torroidal plasma source with a gas distribution plateAPPLIED MATERIALS INC·Filed 2000·Granted Oct 22, 2002·66 cites·21 claims
- 3995US6453842B1Externally excited torroidal plasma source using a gas distribution plateAPPLIED MATERIALS INC·Filed 2000·Granted Sep 24, 2002·62 cites·11 claims
- 4094US9745663B2Symmetrical inductively coupled plasma source with symmetrical flow chamberAPPLIED MATERIALS INC·Filed 2012·Granted Aug 29, 2017·8 cites·18 claims
- 4193US7767561B2Plasma immersion ion implantation reactor having an ion shower gridAPPLIED MATERIALS INC·Filed 2004·Granted Aug 3, 2010·68 cites·67 claims
- 4292US7223676B2Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layerAPPLIED MATERIALS INC·Filed 2004·Granted May 29, 2007·49 cites·64 claims
- 4391US7221553B2Substrate support having heat transfer systemAPPLIED MATERIALS INC·Filed 2003·Granted May 22, 2007·49 cites·23 claims
- 4490US12020965B2Magnetic holding structures for plasma processing applicationsAPPLIED MATERIALS INC·Filed 2020·Granted Jun 25, 2024·2 cites·10 claims
- 4590US8845816B2Method extending the service interval of a gas distribution plateDIAZ ADAUTO·Filed 2012·Granted Sep 30, 2014·8 cites·11 claims
- 4690US7967996B2Process for wafer backside polymer removal and wafer front side photoresist removalAPPLIED MATERIALS INC·Filed 2007·Granted Jun 28, 2011·16 cites·20 claims
- 4790US7879731B2Improving plasma process uniformity across a wafer by apportioning power among plural VHF sourcesAPPLIED MATERIALS INC·Filed 2007·Granted Feb 1, 2011·13 cites·28 claims
- 4890US7700465B2Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Apr 20, 2010·25 cites·89 claims
- 4990US7303982B2Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Dec 4, 2007·33 cites·84 claims
- 5090US7094316B1Externally excited torroidal plasma sourceAPPLIED MATERIALS INC·Filed 2000·Granted Aug 22, 2006·35 cites·31 claims
Showing the top 50 of 157 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →