Inventor · disambiguated record
Arnaud Regnier
Also filed as: REGNIER ARNAUD
45 granted patents·5 pending applications·116 citations·filing 2005–2025
97Inventor score
Files withST MICROELECTRONICS ROUSSET31STMICROELECTRONICS ROUSSET12ST MICROELECTRONICS CROLLES 2 SAS3FORNARA PASCAL1ST MICROELECTRONICS INT NV1
Top patents by PatentIndex Score
50 records- 0194US11626365B2Co-integrated vertically structured capacitive element and fabrication processST MICROELECTRONICS ROUSSET·Filed 2021·Granted Apr 11, 2023·2 cites·21 claims
- 0293US10818669B2Integrated circuit with vertically structured capacitive element, and its fabricating processST MICROELECTRONICS ROUSSET·Filed 2018·Granted Oct 27, 2020·8 cites·27 claims
- 0390US11139303B2Integrated circuit with vertically structured capacitive element, and its fabricating processST MICROELECTRONICS ROUSSET·Filed 2020·Granted Oct 5, 2021·2 cites·22 claims
- 0490US11081488B2Integrated circuit with vertically structured capacitive element, and its fabricating processST MICROELECTRONICS ROUSSET·Filed 2020·Granted Aug 3, 2021·2 cites·21 claims
- 0588US9406686B2Memory cell comprising non-self-aligned horizontal and vertical control gatesSTMICROELECTRONICS ROUSSET·Filed 2014·Granted Aug 2, 2016·5 cites·20 claims
- 0687US9941369B2Memory cell comprising non-self-aligned horizontal and vertical control gatesST MICROELECTRONICS ROUSSET·Filed 2016·Granted Apr 10, 2018·3 cites·18 claims
- 0787US9543311B2Vertical memory cell with non-self-aligned floating drain-source implantSTMICROELECTRONICS ROUSSET·Filed 2015·Granted Jan 10, 2017·4 cites·18 claims
- 0887US9224482B2Hot-carrier injection programmable memory and method of programming such a memoryST MICROELECTRONICS ROUSSET·Filed 2014·Granted Dec 29, 2015·10 cites·19 claims
- 0987US8901634B2Nonvolatile memory cells with a vertical selection gate of variable depthST MICROELECTRONICS ROUSSET·Filed 2013·Granted Dec 2, 2014·10 cites·20 claims
- 1087US2025309097A1Co-integrated vertically structured capacitive element and fabrication processST MICROELECTRONICS ROUSSET·Filed 2025·Application pending·0 cites
- 1185US9876122B2Vertical memory cell with non-self-aligned floating drain-source implantSTMICROELECTRONICS ROUSSET·Filed 2016·Granted Jan 23, 2018·3 cites·16 claims
- 1284US10403730B2Memory cell comprising non-self-aligned horizontal and vertical control gatesST MICROELECTRONICS ROUSSET·Filed 2018·Granted Sep 3, 2019·2 cites·20 claims
- 1384US10147733B2Method for forming a PN junction and associated semiconductor deviceST MICROELECTRONICS ROUSSET·Filed 2016·Granted Dec 4, 2018·3 cites·23 claims
- 1484US9368215B2Method for biasing an embedded source plane of a non-volatile memory having vertical select gatesST MICROELECTRONICS ROUSSET·Filed 2015·Granted Jun 14, 2016·7 cites·14 claims
- 1583US11004785B2Co-integrated vertically structured capacitive element and fabrication processST MICROELECTRONICS ROUSSET·Filed 2019·Granted May 11, 2021·2 cites·22 claims
- 1683US9484107B2Dual non-volatile memory cell comprising an erase transistorSTMICROELECTRONICS ROUSSET·Filed 2015·Granted Nov 1, 2016·3 cites·17 claims
- 1782US8729668B2Adjustable resistorFORNARA PASCAL·Filed 2012·Granted May 20, 2014·6 cites·8 claims
- 1881US12334429B2Co-integrated vertically structured capacitive element and fabrication processST MICROELECTRONICS ROUSSET·Filed 2023·Granted Jun 17, 2025·0 cites·9 claims
- 1980US9825186B2Read performance of a non-volatile memory device, in particular a non-volatile memory device with buried selection transistorSTMICROELECTRONICS ROUSSET·Filed 2016·Granted Nov 21, 2017·5 cites·20 claims
- 2080US9653470B2Individually read-accessible twin memory cellsSTMICROELECTRONICS ROUSSET·Filed 2015·Granted May 16, 2017·3 cites·19 claims
- 2179US10971633B2Structure and method of forming a semiconductor deviceST MICROELECTRONICS ROUSSET·Filed 2019·Granted Apr 6, 2021·2 cites·20 claims
- 2278US10002906B2Method for fabricating an array of diodes, in particular for a non-volatile memory, and corresponding deviceST MICROELECTRONICS ROUSSET·Filed 2016·Granted Jun 19, 2018·2 cites·21 claims
- 2378US9443598B2Method for programming a non-volatile memory cell comprising a shared select transistor gateSTMICROELECTRONICS ROUSSET·Filed 2015·Granted Sep 13, 2016·5 cites·14 claims
- 2475US11405223B2Device of physically unclonable function with transistors, and manufacturing methodST MICROELECTRONICS CROLLES 2 SAS·Filed 2020·Granted Aug 2, 2022·1 cites·20 claims
- 2575US7675106B2Non-volatile reprogrammable memoryST MICROELECTRONICS SA·Filed 2006·Granted Mar 9, 2010·8 cites·19 claims
- 2674US9076878B2Non-volatile memory with vertical selection transistorsST MICROELECTRONICS ROUSSET·Filed 2013·Granted Jul 7, 2015·5 cites·22 claims
- 2771US2025040165A1Mos transistor having substantially parallelpiped-shaped insulating spacersST MICROELECTRONICS ROUSSET·Filed 2024·Application pending·0 cites
- 2870US10438960B2Compact non-volatile memory device of the type with charge trapping in a dielectric interfaceST MICROELECTRONICS ROUSSET·Filed 2017·Granted Oct 8, 2019·2 cites·22 claims
- 2968US9666484B2Integrated circuit protected from short circuits caused by silicideSTMICROELECTRONICS ROUSSET·Filed 2015·Granted May 30, 2017·1 cites·20 claims
- 3067US10686046B2Memory cell comprising non-self-aligned horizontal and vertical control gatesST MICROELECTRONICS ROUSSET·Filed 2019·Granted Jun 16, 2020·0 cites·20 claims
- 3167US7242621B2Floating-gate MOS transistor with double control gateUNIV D AIX MARSEILLE I·Filed 2005·Granted Jul 10, 2007·7 cites·13 claims
- 3262US12125899B2MOS transistor having substantially parallelepiped-shaped insulating spacersST MICROELECTRONICS ROUSSET·Filed 2021·Granted Oct 22, 2024·0 cites·18 claims
- 3360US10192999B2Vertical memory cell with non-self-aligned floating drain-source implantST MICROELECTRONICS ROUSSET·Filed 2017·Granted Jan 29, 2019·0 cites·18 claims
- 3459US9691866B2Memory cell having a vertical selection gate formed in an FDSOI substrateSTMICROELECTRONICS ROUSSET·Filed 2016·Granted Jun 27, 2017·1 cites·20 claims
- 3558US8830761B2Method of reading and writing nonvolatile memory cellsST MICROELECTRONICS ROUSSET·Filed 2013·Granted Sep 9, 2014·2 cites·20 claims
- 3656US10770357B2Integrated circuit with improved resistive regionST MICROELECTRONICS CROLLES 2 SAS·Filed 2019·Granted Sep 8, 2020·0 cites·25 claims
- 3755US10541270B2Method for fabricating an array of diodes, in particular for a non-volatile memory, and corresponding deviceST MICROELECTRONICS ROUSSET·Filed 2018·Granted Jan 21, 2020·0 cites·20 claims
- 3854US2019067309A1Method for Forming a PN Junction and Associated Semiconductor DeviceST MICROELECTRONICS ROUSSET·Filed 2018·Application pending·0 cites
- 3954US2025151269A1Integrated circuit including a memory cell and corresponding manufacturing methodST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 4053US10930757B2Method of manufacturing MOS transistor spacersST MICROELECTRONICS ROUSSET·Filed 2018·Granted Feb 23, 2021·0 cites·19 claims
- 4153US2014246720A1Integrated circuit protected from short circuits caused by silicideST MICROELECTRONICS ROUSSET·Filed 2014·Application pending·0 cites
- 4252US10354926B2Integrated circuit with improved resistive regionST MICROELECTRONICS CROLLES 2 SAS·Filed 2017·Granted Jul 16, 2019·0 cites·27 claims
- 4350US9941012B2Twin memory cell interconnection structureST MICROELECTRONICS ROUSSET·Filed 2017·Granted Apr 10, 2018·0 cites·20 claims
- 4450US9613709B2Dual non-volatile memory cell comprising an erase transistorSTMICROELECTRONICS ROUSSET·Filed 2016·Granted Apr 4, 2017·0 cites·12 claims
- 4549US10790293B2Compact non-volatile memory device of the type with charge trapping in a dielectric interfaceST MICROELECTRONICS ROUSSET·Filed 2019·Granted Sep 29, 2020·0 cites·20 claims
- 4649US9627068B2Twin memory cell interconnection structureSTMICROELECTRONICS ROUSSET·Filed 2015·Granted Apr 18, 2017·0 cites·20 claims
- 4746US10943862B2Integrated filler capacitor cell device and corresponding manufacturing methodST MICROELECTRONICS ROUSSET·Filed 2019·Granted Mar 9, 2021·0 cites·17 claims
- 4845US10796763B2Method for programming a split-gate memory cell and corresponding memory deviceST MICROELECTRONICS ROUSSET·Filed 2019·Granted Oct 6, 2020·0 cites·18 claims
- 4943US9461129B2Memory cell having a vertical selection gate formed in an FDSOI substrateSTMICROELECTRONICS ROUSSET·Filed 2015·Granted Oct 4, 2016·0 cites·9 claims
- 5041US9012961B2Method of manufacturing a non-volatile memoryST MICROELECTRONICS ROUSSET·Filed 2014·Granted Apr 21, 2015·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →