Inventor · disambiguated record
Bartlet H. Deprospo
Also filed as: DEPROSPO BARTLET · DEPROSPO BARTLET H
34 granted patents·4 pending applications·119 citations·filing 2016–2024
96Inventor score
Top patents by PatentIndex Score
38 records- 0198US11056429B2Semiconductor device including a porous dielectric layer, and method of forming the semiconductor deviceTESSERA INC·Filed 2020·Granted Jul 6, 2021·4 cites·19 claims
- 0298US9911651B1Skip-vias bypassing a metallization level at minimum pitchIBM·Filed 2016·Granted Mar 6, 2018·26 cites·16 claims
- 0395US11955424B2Semiconductor device including a porous dielectric layer, and method of forming the semiconductor deviceADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2023·Granted Apr 9, 2024·1 cites·20 claims
- 0495US11574864B2Semiconductor device including a porous dielectric layer, and method of forming the semiconductor deviceTESSERA LLC·Filed 2021·Granted Feb 7, 2023·2 cites·21 claims
- 0595US10109579B2Semiconductor device including a porous dielectric layer, and method of forming the semiconductor deviceIBM·Filed 2018·Granted Oct 23, 2018·8 cites·20 claims
- 0694US10083905B2Skip-vias bypassing a metallization level at minimum pitchIBM·Filed 2017·Granted Sep 25, 2018·9 cites·19 claims
- 0794US9685366B1Forming chamferless vias using thermally decomposable porefillerIBM·Filed 2016·Granted Jun 20, 2017·12 cites·11 claims
- 0893US10366952B2Semiconductor device including a porous dielectric layer, and method of forming the semiconductor deviceIBM·Filed 2018·Granted Jul 30, 2019·5 cites·17 claims
- 0993US9837305B1Forming deep airgaps without flop overIBM·Filed 2016·Granted Dec 5, 2017·10 cites·20 claims
- 1092US9793206B1Heterogeneous metallization using solid diffusion removal of metal interconnectsIBM·Filed 2016·Granted Oct 17, 2017·8 cites·10 claims
- 1191US9997451B2Semiconductor device including a porous dielectric layer, and method of forming the semiconductor deviceIBM·Filed 2016·Granted Jun 12, 2018·5 cites·16 claims
- 1290US10629529B2Semiconductor device including a porous dielectric layer, and method of forming the semiconductor deviceTESSERA INC·Filed 2019·Granted Apr 21, 2020·3 cites·19 claims
- 1390US10559498B2Location-specific laser annealing to improve interconnect microstructureIBM·Filed 2019·Granted Feb 11, 2020·2 cites·20 claims
- 1490US9418327B1Security key systemIBM·Filed 2016·Granted Aug 16, 2016·6 cites·6 claims
- 1584US10912986B2Dynamic rigidity mechanismIBM·Filed 2018·Granted Feb 9, 2021·3 cites·9 claims
- 1682US9837485B2High-density MIM capacitorsIBM·Filed 2016·Granted Dec 5, 2017·3 cites·18 claims
- 1781US10366920B2Location-specific laser annealing to improve interconnect microstructureIBM·Filed 2016·Granted Jul 30, 2019·2 cites·12 claims
- 1879US10515894B2Enhanced self-alignment of vias for a semiconductor deviceIBM·Filed 2018·Granted Dec 24, 2019·2 cites·6 claims
- 1978US10150323B2Structure, system, method, and recording medium of implementing a directed self-assembled security patternIBM·Filed 2016·Granted Dec 11, 2018·1 cites·14 claims
- 2077US9778007B1Matching a spent firearm cartridgeIBM·Filed 2016·Granted Oct 3, 2017·2 cites·21 claims
- 2176US10099108B2Dynamic rigidity mechanismIBM·Filed 2016·Granted Oct 16, 2018·2 cites·9 claims
- 2276US9824982B1Structure and fabrication method for enhanced mechanical strength crack stopIBM·Filed 2016·Granted Nov 21, 2017·2 cites·11 claims
- 2370US12183692B1Embedded inductors and integrated voltage regulators for packaged semiconductor devicesSARAS MICRO DEVICES INC·Filed 2024·Granted Dec 31, 2024·0 cites·20 claims
- 2469US2025226337A1Embedded inductors and integrated voltage regulators for packaged semiconductor devicesSARAS MICRO DEVICES INC·Filed 2024·Application pending·0 cites
- 2568US12191346B1Selective area metal process for improved metallurgical bonding of aluminum to copper for integrated passive devices in a semiconductor deviceSARAS MICRO DEVICES INC·Filed 2024·Granted Jan 7, 2025·0 cites·20 claims
- 2668US10211151B2Enhanced self-alignment of vias for asemiconductor deviceIBM·Filed 2016·Granted Feb 19, 2019·1 cites·13 claims
- 2767US2025359088A1Selective area metal process for improved metallurgical bonding of aluminum to copper for integrated passive devices in a semiconductor deviceSARAS MICRO DEVICES INC·Filed 2024·Application pending·0 cites
- 2865US10770348B2Location-specific laser annealing to improve interconnect microstructureIBM·Filed 2019·Granted Sep 8, 2020·0 cites·18 claims
- 2963US10315451B2Structure, system, method, and recording medium of implementing a directed self-assembled security patternIBM·Filed 2018·Granted Jun 11, 2019·0 cites·19 claims
- 3058US10752039B2Structure of implementing a directed self-assembled security patternIBM·Filed 2019·Granted Aug 25, 2020·0 cites·2 claims
- 3155US10229967B2High-density MIM capacitorsIBM·Filed 2017·Granted Mar 12, 2019·0 cites·20 claims
- 3255US9899338B1Structure and fabrication method for enhanced mechanical strength crack stopIBM·Filed 2017·Granted Feb 20, 2018·0 cites·19 claims
- 3353US10784156B2Self-aligned airgaps with conductive lines and viasIBM·Filed 2017·Granted Sep 22, 2020·0 cites·9 claims
- 3453US9881431B2Security key systemIBM·Filed 2016·Granted Jan 30, 2018·0 cites·20 claims
- 3553US9760817B2Security key systemIBM·Filed 2016·Granted Sep 12, 2017·0 cites·14 claims
- 3651US9899256B2Self-aligned airgaps with conductive lines and viasIBM·Filed 2016·Granted Feb 20, 2018·0 cites·18 claims
- 3748US2018090372A1Heterogeneous metallization using solid diffusion removal of metal interconnectsIBM·Filed 2017·Application pending·0 cites
- 3843US2025140483A1Integrated passive devices with enhanced form factorSARAS MICRO DEVICES INC·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →