Inventor · disambiguated record
Bernhard Goller
Also filed as: GOLLER BERNHARD
42 granted patents·9 pending applications·122 citations·filing 2011–2025
97Inventor score
Files withINFINEON TECHNOLOGIES AG42INFINEON TECHNOLOGIES AUSTRIA AG7FORSTER MAGDALENA1INFINEON TECHNOLOGIES AUSTRIA1
Top patents by PatentIndex Score
51 records- 0194US10573742B1Oxygen inserted Si-layers in vertical trench power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Feb 25, 2020·11 cites·24 claims
- 0293US9355881B2Semiconductor device including a dielectric materialINFINEON TECHNOLOGIES AG·Filed 2014·Granted May 31, 2016·38 cites·22 claims
- 0392US10903078B2Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 26, 2021·9 cites·28 claims
- 0492US10784161B2Semiconductor chip including self-aligned, back-side conductive layer and method for making the sameINFINEON TECHNOLOGIES AG·Filed 2018·Granted Sep 22, 2020·7 cites·8 claims
- 0591US10580888B1Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Mar 3, 2020·7 cites·22 claims
- 0690US11031466B2Method of forming oxygen inserted Si-layers in power semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jun 8, 2021·2 cites·20 claims
- 0789US11476111B2Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Oct 18, 2022·2 cites·13 claims
- 0889US10741638B2Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Aug 11, 2020·4 cites·13 claims
- 0989US9886660B2Semiconductor device having one or more of a shock sensor and an acceleration sensorINFINEON TECHNOLOGIES AG·Filed 2016·Granted Feb 6, 2018·6 cites·6 claims
- 1087US11742215B2Methods for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 29, 2023·1 cites·16 claims
- 1186US10861966B2Vertical trench power devices with oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 8, 2020·3 cites·20 claims
- 1286US9614256B2Lithium ion battery, integrated circuit and method of manufacturing a lithium ion batteryINFINEON TECHNOLOGIES AG·Filed 2014·Granted Apr 4, 2017·4 cites·14 claims
- 1384US12412740B2Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 1483US10714377B2Semiconductor device and semiconductor wafer including a porous layer and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jul 14, 2020·3 cites·39 claims
- 1582US10433736B2Implantable vessel fluid sensorINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 8, 2019·5 cites·6 claims
- 1680US9269961B2Lithium battery, method for manufacturing a lithium battery, integrated circuit and method of manufacturing an integrated circuitINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Feb 23, 2016·4 cites·20 claims
- 1780US8785034B2Lithium battery, method for manufacturing a lithium battery, integrated circuit and method of manufacturing an integrated circuitFORSTER MAGDALENA·Filed 2011·Granted Jul 22, 2014·7 cites·27 claims
- 1879US11404262B2Method for partially removing a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 2, 2022·2 cites·24 claims
- 1979US9929438B2Method of manufacturing a lithium ion batteryINFINEON TECHNOLOGIES AG·Filed 2017·Granted Mar 27, 2018·1 cites·20 claims
- 2077US12211703B2Methods for forming a semiconductor device having a second semiconductor layer on a first semiconductor layerINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jan 28, 2025·0 cites·19 claims
- 2177US11881397B2Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jan 23, 2024·0 cites·20 claims
- 2277US9917333B2Lithium ion battery, integrated circuit and method of manufacturing a lithium ion batteryINFINEON TECHNOLOGIES AG·Filed 2014·Granted Mar 13, 2018·2 cites·20 claims
- 2373US10199255B2Method for providing a planarizable workpiece support, a workpiece planarization arrangement, and a chuckINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 5, 2019·2 cites·20 claims
- 2468US11088009B2Support table, support table assembly, processing arrangement, and methods thereofINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 10, 2021·1 cites·24 claims
- 2567US11810779B2Method of porosifying part of a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2022·Granted Nov 7, 2023·0 cites·22 claims
- 2667US10157765B2Methods for processing a semiconductor workpieceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Dec 18, 2018·1 cites·17 claims
- 2767US2023330769A1Parent Substrate, Wafer Composite and Methods of Manufacturing Crystalline Substrates and Semiconductor DevicesINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 2866US12249504B2Manufacturing and reuse of semiconductor substratesINFINEON TECHNOLOGIES AG·Filed 2022·Granted Mar 11, 2025·0 cites·29 claims
- 2966US2025183031A1Method of processing a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 3065US11328955B2Semiconductor chip including back-side conductive layerINFINEON TECHNOLOGIES AG·Filed 2020·Granted May 10, 2022·0 cites·22 claims
- 3163US11712749B2Parent substrate, wafer composite and methods of manufacturing crystalline substrates and semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2020·Granted Aug 1, 2023·0 cites·26 claims
- 3262US10868172B2Vertical power devices with oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 15, 2020·0 cites·23 claims
- 3356US2024030032A1Method for manufacturing a contact on a silicon carbide semiconductor substrate, and silicon carbide semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 3453US9489607B2Semiconductor device and an identification tagINFINEON TECHNOLOGIES AG·Filed 2013·Granted Nov 8, 2016·0 cites·7 claims
- 3553US2024006218A1Method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 3652US11139375B2Semiconductor device and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Oct 5, 2021·0 cites·20 claims
- 3752US9531035B2Lithium battery, method for manufacturing a lithium battery, integrated circuit and method of manufacturing an integrated circuitINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Dec 27, 2016·0 cites·18 claims
- 3852US2023238442A1Semiconductor device with metal nitride layer and a method of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 3951US10170746B2Battery electrode, battery, and method for manufacturing a battery electrodeINFINEON TECHNOLOGIES AG·Filed 2012·Granted Jan 1, 2019·0 cites·24 claims
- 4050US2025253168A1Apparatus for Electrochemical Treating of a Semiconductor Substrate and a Process using the ApparatusINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 4149US9627670B2Battery cell and method for making battery cellINFINEON TECHNOLOGIES AG·Filed 2013·Granted Apr 18, 2017·0 cites·19 claims
- 4249US2015147850A1Methods for processing a semiconductor workpieceINFINEON TECHNOLOGIES AG·Filed 2013·Application pending·0 cites
- 4349US2021391377A1Method of thinning a semiconductor substrate to high evenness and semiconductor substrate having a device layer of high evennessINFINEON TECHNOLOGIES AG·Filed 2021·Application pending·0 cites
- 4448US10530018B2Panel, a method for fabricating a panel and a methodINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jan 7, 2020·0 cites·20 claims
- 4547US10749216B2Battery, integrated circuit and method of manufacturing a batteryINFINEON TECHNOLOGIES AG·Filed 2014·Granted Aug 18, 2020·0 cites·20 claims
- 4646US2021391218A1Semiconductor device manufacturing by thinning and dicingINFINEON TECHNOLOGIES AG·Filed 2021·Application pending·0 cites
- 4744US11373857B2Semiconductor surface smoothing and semiconductor arrangementINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 28, 2022·0 cites·18 claims
- 4841US12060266B2Method with mechanical dicing process for producing MEMS componentsINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 13, 2024·0 cites·21 claims
- 4940US10439062B2Metallization layers for semiconductor devices and methods of forming thereofINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 8, 2019·0 cites·24 claims
- 5039US9862037B2Method for planarizing one or more workpieces, a workpiece planarization arrangement, a chuck and a replaceable workpiece-support for a chuckINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 9, 2018·0 cites·20 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →