Parent Substrate, Wafer Composite and Methods of Manufacturing Crystalline Substrates and Semiconductor Devices

Abstract

Provided is a machining apparatus including a profile sensor unit configured to obtain shape information about a parent substrate; and a laser scan unit configured to direct a laser beam onto the parent substrate, wherein a laser beam axis of the laser beam is tilted to an exposed main surface of the parent substrate, and wherein a track of the laser beam on the parent substrate is controllable as a function of the shape information obtained from the profile sensor unit.

What is claimed is: 
     
         1 . A machining apparatus, comprising:
 a profile sensor unit configured to obtain shape information about a parent substrate; and   a laser scan unit configured to direct a laser beam onto the parent substrate, wherein a laser beam axis of the laser beam is tilted to an exposed main surface of the parent substrate, and wherein a track of the laser beam on the parent substrate is controllable as a function of the shape information obtained from the profile sensor unit.   
     
     
         2 . The machining apparatus of  claim 1 , wherein the machining apparatus comprises a stage unit. 
     
     
         3 . The machining apparatus of  claim 2 , wherein the stage unit is configured to allow rotational and/or linear movement of a wafer composite comprising the parent substrate relative to the profile sensor unit and the laser scan unit. 
     
     
         4 . The machining apparatus of  claim 2 , wherein the stage unit is adapted to be reversibly connected with a main surface of the parent substrate. 
     
     
         5 . The machining apparatus of  claim 2 , wherein the stage unit is moveable with respect to the laser beam and/or the laser beam is moveable with respect to the stage unit such that the laser beam may follow a track along the circumference of the parent substrate. 
     
     
         6 . The machining apparatus of  claim 2 , wherein the machining apparatus comprises a control unit that is configured to process information obtained from the profile sensor unit and from the stage unit. 
     
     
         7 . The machining apparatus of  claim 6 , wherein the control unit is configured control a relative movement between the laser scan unit and the stage unit in a way that the laser beam follows a desired path on a surface of a wafer composite comprising the parent substrate. 
     
     
         8 . The machining apparatus of  claim 1 , wherein the machining apparatus is configured to form a groove in an edge region of a wafer composite comprising the parent substrate.