Inventor · disambiguated record
Marko Swoboda
Also filed as: SWOBODA MARKO · SWOBODA MARKO DAVID
24 granted patents·6 pending applications·25 citations·filing 2016–2025
92Inventor score
Top patents by PatentIndex Score
30 records- 0194US11081393B2Method for splitting semiconductor wafersINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 3, 2021·7 cites·29 claims
- 0289US10978311B2Method for thinning solid body layers provided with componentsSILTECTRA GMBH·Filed 2017·Granted Apr 13, 2021·5 cites·20 claims
- 0382US12151314B2Device and method for applying pressure to stress-producing layers for improved guidance of a separation crackSILTECTRA GMBH·Filed 2018·Granted Nov 26, 2024·3 cites·18 claims
- 0481US2025280591A1Semiconductor wafer splitting methodINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 0579US11869810B2Method for reducing the thickness of solid-state layers provided with componentsSILTECTRA GMBH·Filed 2018·Granted Jan 9, 2024·2 cites·18 claims
- 0679US10994442B2Method for forming a crack in the edge region of a donor substrate, using an inclined laser beamSILTECTRA GMBH·Filed 2016·Granted May 4, 2021·3 cites·8 claims
- 0777US12030216B2Method for separating wafers from donor substratesSILTECTRA GMBH·Filed 2023·Granted Jul 9, 2024·0 cites·18 claims
- 0877US11772201B2Method for separating solid body layers from composite structures made of SiC and a metallic coating or electrical componentsSILTECTRA GMBH·Filed 2019·Granted Oct 3, 2023·2 cites·19 claims
- 0975US2024413023A1Method and apparatus for producing at least one modification in a solid bodyINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1072US12159805B2Method for producing wafers with modification lines of defined orientationSILTECTRA GMBH·Filed 2018·Granted Dec 3, 2024·1 cites·21 claims
- 1172US12107017B2Method and apparatus for producing at least one modification in a solid bodyINFINEON TECHNOLOGIES AG·Filed 2022·Granted Oct 1, 2024·0 cites·20 claims
- 1271US12356700B2Method for splitting semiconductor wafersINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jul 8, 2025·0 cites·15 claims
- 1371US11309191B2Method for modifying substrates based on crystal lattice dislocation densitySILTECTRA GMBH·Filed 2019·Granted Apr 19, 2022·1 cites·25 claims
- 1470US10676386B2Method for guiding a crack in the peripheral region of a donor substrateSILTECTRA GMBH·Filed 2019·Granted Jun 9, 2020·0 cites·17 claims
- 1568US10280107B2Method for guiding a crack in the peripheral region of a donor substrateSILTECTRA GMBH·Filed 2016·Granted May 7, 2019·1 cites·16 claims
- 1667US12211702B2Solid body and multi-component arrangementSILTECTRA GMBH·Filed 2021·Granted Jan 28, 2025·0 cites·16 claims
- 1767US2023330769A1Parent Substrate, Wafer Composite and Methods of Manufacturing Crystalline Substrates and Semiconductor DevicesINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 1865US12097641B2Method for forming a crack in an edge region of a donor substrateSILTECTRA GMBH·Filed 2021·Granted Sep 24, 2024·0 cites·19 claims
- 1963US11712749B2Parent substrate, wafer composite and methods of manufacturing crystalline substrates and semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2020·Granted Aug 1, 2023·0 cites·26 claims
- 2062US11551981B2Method and apparatus for producing at least one modification in a solid bodyINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 10, 2023·0 cites·18 claims
- 2161US2021299910A1Method for separating a solid-state layer from a solid-state materialSILTECTRA GMBH·Filed 2021·Application pending·0 cites
- 2259US11787083B2Production facility for separating wafers from donor substratesSILTECTRA GMBH·Filed 2018·Granted Oct 17, 2023·0 cites·21 claims
- 2356US11557506B2Methods for processing a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 17, 2023·0 cites·19 claims
- 2451US11059202B2Method and device for producing planar modifications in solid bodiesSILTECTRA GMBH·Filed 2016·Granted Jul 13, 2021·0 cites·10 claims
- 2551US2025366253A1Method for manufacturing cdte based thin film solar cell with graded refractive index profile within the cdte-based absorber layer and cdte based thin film solar cell with graded refractive index profileCHINA TRIUMPH INT ENG CO LTD·Filed 2022·Application pending·0 cites
- 2643US10858495B2Polymer hybrid material for use in a splitting methodSILTECTRA GMBH·Filed 2017·Granted Dec 8, 2020·0 cites·26 claims
- 2741US11664277B2Method for thinning solid-body layers provided with componentsSILTECTRA GMBH·Filed 2018·Granted May 30, 2023·0 cites·19 claims
- 2841US2018154572A1Apparatus and method for continuous treatment of a solid body by means of laser beamSILTECTRA GMBH·Filed 2016·Application pending·0 cites
- 2940US11822307B2Laser conditioning of solid bodies using prior knowledge from previous machining stepsSILTECTRA GMBH·Filed 2017·Granted Nov 21, 2023·0 cites·14 claims
- 3040US11130200B2Combined laser treatment of a solid body to be splitSILTECTRA GMBH·Filed 2017·Granted Sep 28, 2021·0 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →