Inventor · disambiguated record
Bhushan Zope
Also filed as: ZOPE BHUSHAN · ZOPE BHUSHAN N
25 granted patents·14 pending applications·164 citations·filing 2013–2025
95Inventor score
Files withASM IP HOLDING BV23APPLIED MATERIALS INC12MERCK PATENT GMBH2VERSUM MAT US LLC1ZOPE BHUSHAN N1
Top patents by PatentIndex Score
39 records- 0197US12203166B2Apparatus and methods for performing an in-situ etch of reaction chambers with fluorine-based radicalsASM IP HOLDING BV·Filed 2021·Granted Jan 21, 2025·3 cites·16 claims
- 0297US11581220B2Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structuresASM IP HOLDING BV·Filed 2021·Granted Feb 14, 2023·4 cites·20 claims
- 0397US9685371B2Method of enabling seamless cobalt gap-fillAPPLIED MATERIALS INC·Filed 2014·Granted Jun 20, 2017·35 cites·13 claims
- 0496US12354877B2Vapor deposition of films comprising molybdenumASM IP HOLDING BV·Filed 2021·Granted Jul 8, 2025·4 cites·24 claims
- 0596US11295980B2Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structuresASM IP HOLDING BV·Filed 2018·Granted Apr 5, 2022·14 cites·17 claims
- 0696US11286558B2Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride filmASM IP HOLDING BV·Filed 2020·Granted Mar 29, 2022·9 cites·38 claims
- 0795US11404302B2Substrate susceptor using edge purgingASM IP HOLDING BV·Filed 2020·Granted Aug 2, 2022·4 cites·17 claims
- 0895US9528183B2Cobalt removal for chamber clean or pre-clean processAPPLIED MATERIALS INC·Filed 2014·Granted Dec 27, 2016·25 cites·11 claims
- 0995US9330939B2Method of enabling seamless cobalt gap-fillZOPE BHUSHAN N·Filed 2013·Granted May 3, 2016·50 cites·18 claims
- 1091US11946136B2Semiconductor processing deviceASM IP HOLDING BV·Filed 2020·Granted Apr 2, 2024·2 cites·20 claims
- 1190US12406871B2Substrate susceptor using edge purgingASM IP HOLDING BV·Filed 2022·Granted Sep 2, 2025·1 cites·11 claims
- 1288US11898242B2Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum filmASM IP HOLDING BV·Filed 2020·Granted Feb 13, 2024·2 cites·40 claims
- 1386US2025092513A1Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride filmASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 1486US2025101581A1Apparatus and methods for performing an in-situ etch of reaction chambers with fluorine-based radicalsASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 1584US12467137B2Semiconductor processing deviceASM IP HOLDING BV·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 1684US12215416B2Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride filmASM IP HOLDING BV·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1782US9842769B2Method of enabling seamless cobalt gap-fillAPPLIED MATERIALS INC·Filed 2016·Granted Dec 12, 2017·3 cites·20 claims
- 1881US2024153817A1Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structuresASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 1980US10199230B2Methods for selective deposition of metal silicides via atomic layer deposition cyclesAPPLIED MATERIALS INC·Filed 2015·Granted Feb 5, 2019·3 cites·19 claims
- 2077US11908736B2Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structuresASM IP HOLDING BV·Filed 2022·Granted Feb 20, 2024·0 cites·17 claims
- 2176US11827978B2Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride filmASM IP HOLDING BV·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 2275US2025029834A1Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structuresASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 2374US9378941B2Interface treatment of semiconductor surfaces with high density low energy plasmaAPPLIED MATERIALS INC·Filed 2013·Granted Jun 28, 2016·3 cites·11 claims
- 2473US2025279279A1Vapor deposition of films comprising molybdenumASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 2566US10163656B2Methods for dry etching cobalt metal using fluorine radicalsAPPLIED MATERIALS INC·Filed 2014·Granted Dec 25, 2018·1 cites·16 claims
- 2666US9218980B2Surface treatment to improve CCTBA based CVD co nucleation on dielectric substrateAPPLIED MATERIALS INC·Filed 2013·Granted Dec 22, 2015·1 cites·5 claims
- 2761US9637819B2Methods for preferential growth of cobalt within substrate featuresAPPLIED MATERIALS INC·Filed 2014·Granted May 2, 2017·0 cites·11 claims
- 2858US2015030771A1Cobalt substrate processing systems, apparatus, and methodsAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 2956US10269633B2Method of enabling seamless cobalt gap-fillAPPLIED MATERIALS INC·Filed 2017·Granted Apr 23, 2019·0 cites·19 claims
- 3054US2025003058A1SELECTIVE DEPOSITION OF RUTHENIUM FILM BY UTILIZING Ru(I) PRECURSORSMERCK PATENT GMBH·Filed 2022·Application pending·0 cites
- 3153US2019067003A1Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structuresASM IP HOLDING BV·Filed 2018·Application pending·0 cites
- 3250US2021404060A1Vapor deposition of tungsten filmsASM IP HOLDING BV·Filed 2021·Application pending·0 cites
- 3349US10699946B2Method of enabling seamless cobalt gap-fillAPPLIED MATERIALS INC·Filed 2016·Granted Jun 30, 2020·0 cites·20 claims
- 3448US12033885B2Channeled lift pinASM IP HOLDING BV·Filed 2021·Granted Jul 9, 2024·0 cites·14 claims
- 3548US2025226213A1Isotropic thermal atomic layer etch of zirconium and hafnium oxidesMERCK PATENT GMBH·Filed 2022·Application pending·0 cites
- 3648US2023416911A1Selective deposition of silicon and oxygen containing dielectric film on dielectricsVERSUM MAT US LLC·Filed 2021·Application pending·0 cites
- 3747US2016104639A1Surface treatment to improve cctba based cvd co nucleation on dielectric substrateAPPLIED MATERIALS INC·Filed 2015·Application pending·0 cites
- 3841US2019067014A1Methods for filling a gap feature on a substrate surface and related semiconductor device structuresASM IP HOLDING BV·Filed 2018·Application pending·0 cites
- 3940US2019067095A1Layer forming methodASM IP HOLDING BV·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →