Inventor · disambiguated record
Brent A. Anderson
Also filed as: ANDERSON BRENT · ANDERSON BRENT A · ANDERSON BRENT ALAN
557 granted patents·166 pending applications·5,535 citations·filing 1999–2024
99Inventor score
Files withIBM583ANDERSON BRENT A96GLOBALFOUNDRIES INC28ANDERSON BRENT ALAN6SAMSUNG ELECTRONICS CO LTD4
Top patents by PatentIndex Score
723 records- 0199US9680473B1Ultra dense vertical transport FET circuitsIBM·Filed 2016·Granted Jun 13, 2017·79 cites·18 claims
- 0299US9613861B2Damascene wires with top via structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 4, 2017·60 cites·17 claims
- 0399US9431305B1Vertical transistor fabrication and devicesIBM·Filed 2015·Granted Aug 30, 2016·57 cites·13 claims
- 0499US9299835B1Vertical field effect transistorsIBM·Filed 2014·Granted Mar 29, 2016·141 cites·9 claims
- 0599US7557597B2Stacked chip securityIBM·Filed 2005·Granted Jul 7, 2009·231 cites·8 claims
- 0699US7411252B2Substrate backgate for trigate FETIBM·Filed 2005·Granted Aug 12, 2008·156 cites·16 claims
- 0799US7259420B2Multiple-gate device with floating back gateIBM·Filed 2004·Granted Aug 21, 2007·249 cites·21 claims
- 0899US7101763B1Low capacitance junction-isolation for bulk FinFET technologyIBM·Filed 2005·Granted Sep 5, 2006·560 cites·20 claims
- 0999US7091551B1Four-bit FinFET NVRAM memory deviceIBM·Filed 2005·Granted Aug 15, 2006·163 cites·22 claims
- 1098US10319629B1Skip via for metal interconnectsIBM·Filed 2018·Granted Jun 11, 2019·25 cites·20 claims
- 1198US10297668B1Vertical transport fin field effect transistor with asymmetric channel profileIBM·Filed 2018·Granted May 21, 2019·18 cites·10 claims
- 1298US10020223B1Reduced tip-to-tip and via pitch at line endIBM·Filed 2017·Granted Jul 10, 2018·30 cites·4 claims
- 1398US9859898B1High density vertical field effect transistor multiplexerIBM·Filed 2016·Granted Jan 2, 2018·23 cites·13 claims
- 1498US9842931B1Self-aligned shallow trench isolation and doping for vertical fin transistorsIBM·Filed 2016·Granted Dec 12, 2017·33 cites·15 claims
- 1598US9805935B2Bottom source/drain silicidation for vertical field-effect transistor (FET)IBM·Filed 2015·Granted Oct 31, 2017·27 cites·18 claims
- 1698US9761712B1Vertical transistors with merged active area regionsIBM·Filed 2016·Granted Sep 12, 2017·26 cites·23 claims
- 1798US9570357B2Vertical field effect transistorsIBM·Filed 2015·Granted Feb 14, 2017·17 cites·18 claims
- 1898US9087897B1Semiconductor structures with pair(s) of vertical field effect transistors, each pair having a shared source/drain region and methods of forming the structuresIBM·Filed 2014·Granted Jul 21, 2015·55 cites·20 claims
- 1998US7851865B2Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structureIBM·Filed 2007·Granted Dec 14, 2010·102 cites·20 claims
- 2098US7732859B2Graphene-based transistorIBM·Filed 2007·Granted Jun 8, 2010·91 cites·14 claims
- 2198US7692254B2Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structureIBM·Filed 2007·Granted Apr 6, 2010·83 cites·20 claims
- 2298US7456471B2Field effect transistor with raised source/drain fin strapsIBM·Filed 2006·Granted Nov 25, 2008·85 cites·20 claims
- 2398US6949768B1Planar substrate devices integrated with finfets and method of manufactureIBM·Filed 2004·Granted Sep 27, 2005·136 cites·19 claims
- 2498US6867460B1FinFET SRAM cell with chevron FinFET logicIBM·Filed 2003·Granted Mar 15, 2005·214 cites·30 claims
- 2597US12057371B2Semiconductor device with early buried power rail (BPR) and backside power distribution network (BSPDN)IBM·Filed 2021·Granted Aug 6, 2024·5 cites·12 claims
- 2697US11271106B2Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contactsIBM·Filed 2020·Granted Mar 8, 2022·4 cites·20 claims
- 2797US10074570B23D vertical FET with top and bottom gate contactsIBM·Filed 2017·Granted Sep 11, 2018·16 cites·20 claims
- 2897US9911738B1Vertical-transport field-effect transistors with a damascene gate strapGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 6, 2018·18 cites·20 claims
- 2997US9853127B1Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer processIBM·Filed 2016·Granted Dec 26, 2017·18 cites·5 claims
- 3097US9786788B1Vertical-transport FinFET device with variable Fin pitchGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 10, 2017·31 cites·15 claims
- 3197US9502407B1Integrating a planar field effect transistor (FET) with a vertical FETIBM·Filed 2015·Granted Nov 22, 2016·13 cites·10 claims
- 3297US9373641B2Methods of forming field effect transistors using a gate cut process following final gate formationIBM·Filed 2014·Granted Jun 21, 2016·28 cites·17 claims
- 3397US9263442B2Replacement gate structures and methods of manufacturingIBM·Filed 2015·Granted Feb 16, 2016·17 cites·12 claims
- 3497US8076204B2Graphene-based transistorANDERSON BRENT A·Filed 2010·Granted Dec 13, 2011·31 cites·20 claims
- 3597US7960791B2Dense pitch bulk FinFET process by selective EPI and etchIBM·Filed 2005·Granted Jun 14, 2011·76 cites·19 claims
- 3697US7341902B2Finfet/trigate stress-memorization methodIBM·Filed 2006·Granted Mar 11, 2008·50 cites·20 claims
- 3797US7183142B2FinFETs with long gate length at high densityIBM·Filed 2005·Granted Feb 27, 2007·58 cites·20 claims
- 3897US6998684B2High mobility plane CMOS SOIIBM·Filed 2004·Granted Feb 14, 2006·149 cites·19 claims
- 3996US10504889B1Integrating a junction field effect transistor into a vertical field effect transistorIBM·Filed 2018·Granted Dec 10, 2019·13 cites·10 claims
- 4096US9991267B1Forming eDRAM unit cell with VFET and via capacitanceIBM·Filed 2017·Granted Jun 5, 2018·12 cites·16 claims
- 4196US9947664B1Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2016·Granted Apr 17, 2018·15 cites·19 claims
- 4296US9786507B2Methods of forming field effect transistors using a gate cut process following final gate formationIBM·Filed 2016·Granted Oct 10, 2017·14 cites·18 claims
- 4396US9653360B2Vertical field effect transistorsIBM·Filed 2015·Granted May 16, 2017·9 cites·17 claims
- 4496US9613955B1Hybrid circuit including a tunnel field-effect transistorIBM·Filed 2015·Granted Apr 4, 2017·23 cites·6 claims
- 4596US9583489B1Solid state diffusion doping for bulk finFET devicesIBM·Filed 2016·Granted Feb 28, 2017·17 cites·17 claims
- 4696US9064943B1Gate-all-around field effect transistor structures and methodsIBM·Filed 2014·Granted Jun 23, 2015·26 cites·20 claims
- 4796US8507962B2Isolation structures for global shutter imager pixel, methods of manufacture and design structuresANDERSON BRENT A·Filed 2010·Granted Aug 13, 2013·15 cites·22 claims
- 4896US8492820B2Integrated circuit and a method using integrated process steps to form deep trench isolation structures and deep trench capacitor structures for the integrated circuitANDERSON BRENT A·Filed 2012·Granted Jul 23, 2013·20 cites·19 claims
- 4996US7256078B2High mobility plane FinFETs with equal drive strengthIBM·Filed 2007·Granted Aug 14, 2007·36 cites·20 claims
- 5095US12419024B2High density static random-access memoryIBM·Filed 2022·Granted Sep 16, 2025·2 cites·17 claims
Showing the top 50 of 723 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →