Inventor · disambiguated record
Carsten Schaeffer
Also filed as: SCHAEFFER CARSTEN
28 granted patents·11 pending applications·205 citations·filing 2000–2025
94Inventor score
Files withINFINEON TECHNOLOGIES AG26INFINEON TECHNOLOGIES AUSTRIA4INFINEON TECHNOLOGIES AUSTRIA AG2CHIOLA DAVIDE1MAUDER ANTON1
Top patents by PatentIndex Score
39 records- 0198US7538412B2Semiconductor device with a field stop zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted May 26, 2009·144 cites·14 claims
- 0282US7880200B2Semiconductor device including a free wheeling diodeINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Feb 1, 2011·10 cites·19 claims
- 0381US6297101B1Method for producing an MOS transistor structure with elevated body conductivitySIEMENS AG·Filed 2000·Granted Oct 2, 2001·28 cites·5 claims
- 0480US9337185B2Semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2014·Granted May 10, 2016·5 cites·16 claims
- 0579US8003502B2Semiconductor device and fabrication methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Granted Aug 23, 2011·4 cites·22 claims
- 0676US8304305B2Semiconductor componentCHIOLA DAVIDE·Filed 2011·Granted Nov 6, 2012·4 cites·4 claims
- 0775US2025331246A1Semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 0872US12183696B2Semiconductor device including bonding pad metal layer structureINFINEON TECHNOLOGIES AG·Filed 2023·Granted Dec 31, 2024·0 cites·25 claims
- 0971US10410911B2Buried insulator regions and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2017·Granted Sep 10, 2019·1 cites·16 claims
- 1070US8884342B2Semiconductor device with a passivation layerSCHMIDT GERHARD R·Filed 2012·Granted Nov 11, 2014·2 cites·30 claims
- 1168US2023343726A1High Voltage Semiconductor Device with Step Topography Passivation Layer StackINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 1267US12363961B2Semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jul 15, 2025·0 cites·26 claims
- 1366US9362349B2Semiconductor device with charge carrier lifetime reduction meansINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jun 7, 2016·2 cites·31 claims
- 1466US9214521B2Reverse conducting IGBTWERBER DOROTHEA·Filed 2012·Granted Dec 15, 2015·2 cites·22 claims
- 1565US9859272B2Semiconductor device with a reduced band gap zoneINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 2, 2018·1 cites·20 claims
- 1663US11764176B2Semiconductor device including bonding pad metal layer structureINFINEON TECHNOLOGIES AG·Filed 2021·Granted Sep 19, 2023·0 cites·18 claims
- 1763US8003456B2Method for producing a semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Aug 23, 2011·2 cites·16 claims
- 1860US10777506B2Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Sep 15, 2020·0 cites·13 claims
- 1960US2024347456A1Vertical power semiconductor device comprising source or emitter padINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 2059US2025006814A1Silicon carbide deviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 2158US9711621B2Trench transistor having a doped semiconductor regionINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 18, 2017·0 cites·15 claims
- 2258US2021151391A1High Voltage Semiconductor Device with Step Topography Passivation Layer StackINFINEON TECHNOLOGIES AG·Filed 2020·Application pending·0 cites
- 2357US11171049B2Semiconductor device and a method of forming the semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Nov 9, 2021·0 cites·19 claims
- 2457US2025357122A1Method of manufacturing a semiconductor device including an ohmic contact and a gate dielectricINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 2556US8815686B2Lateral trench transistor, as well as a method for its productionINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 26, 2014·0 cites·19 claims
- 2656US2024113216A1Semiconductor device and method of producing thereofINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 2754US9859395B2Semiconductor device with a passivation layerINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 2, 2018·0 cites·36 claims
- 2854US8252671B2Semiconductor device and fabrication methodMAUDER ANTON·Filed 2011·Granted Aug 28, 2012·0 cites·22 claims
- 2954US2023274996A1Chip arrangement, chip package, method of forming a chip arrangement, and method of forming a chip packageINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 3053US12046509B2Semiconductor device protection using an anti-reflective layerINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jul 23, 2024·0 cites·24 claims
- 3152US11139375B2Semiconductor device and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Oct 5, 2021·0 cites·20 claims
- 3252US10475743B2Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 12, 2019·0 cites·25 claims
- 3352US9231581B2Method of operating a reverse conducting IGBTINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 5, 2016·0 cites·22 claims
- 3451US9571087B2Method of operating a reverse conducting IGBTINFINEON TECHNOLOGIES AG·Filed 2015·Granted Feb 14, 2017·0 cites·21 claims
- 3549US10332793B2Self-organizing barrier layer disposed between a metallization layer and a semiconductor regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jun 25, 2019·0 cites·17 claims
- 3646US2013341673A1Reverse Conducting IGBTPFIRSCH FRANK·Filed 2012·Application pending·0 cites
- 3743US10002930B2Forming a contact layer on a semiconductor bodyINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jun 19, 2018·0 cites·22 claims
- 3841US2015262814A1Power semiconductor device,power electronic module, and method for processing a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2014·Application pending·0 cites
- 3933US2003060014A1Field effect transistor configuration with high latch-up resistance, and method for its productionFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →