Inventor · disambiguated record
Ceredig Roberts
Also filed as: ROBERTS CEREDIG
36 granted patents·5 pending applications·964 citations·filing 1990–2014
98Inventor score
Top patents by PatentIndex Score
41 records- 0195US4987089ABiCMOS process and process for forming bipolar transistors on wafers also containing FETsMICRON TECHNOLOGY INC·Filed 1990·Granted Jan 22, 1991·152 cites·16 claims
- 0293US7687342B2Method of manufacturing a memory deviceMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 30, 2010·22 cites·14 claims
- 0393US6204143B1Method of forming high aspect ratio structures for semiconductor devicesMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 20, 2001·130 cites·14 claims
- 0492US8716116B2Method of forming a DRAM array of devices with vertically integrated recessed access device and digitlinePAREKH KUNAL·Filed 2010·Granted May 6, 2014·27 cites·23 claims
- 0586US5789306ADual-masked field isolationMICRON TECHNOLOGY INC·Filed 1996·Granted Aug 4, 1998·64 cites·8 claims
- 0684US5573837AMasking layer having narrow isolated spacings and the method for forming said masking layer and the method for forming narrow isolated trenches defined by said masking layerMICRON TECHNOLOGY INC·Filed 1995·Granted Nov 12, 1996·71 cites·10 claims
- 0783US5909630ADual-masked isolationMICRON TECHNOLOGY INC·Filed 1998·Granted Jun 1, 1999·54 cites·16 claims
- 0883US5254218AMasking layer having narrow isolated spacings and the method for forming said masking layer and the method for forming narrow isolated trenches defined by said masking layerMICRON TECHNOLOGY INC·Filed 1992·Granted Oct 19, 1993·85 cites·25 claims
- 0975US6822342B2Raised-lines overlay semiconductor targets and method of making the sameMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 23, 2004·14 cites·9 claims
- 1075US5861344AFacet etch for improved step coverage of integrated circuit contactsMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 19, 1999·36 cites·27 claims
- 1174US6693012B2Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxide MOSFETsMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 17, 2004·12 cites·36 claims
- 1274US6258729B1Oxide etching method and structures resulting from sameMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 10, 2001·37 cites·36 claims
- 1373US6531728B2Oxide etching method and structures resulting from sameMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 11, 2003·13 cites·28 claims
- 1473US6190989B1Method for patterning cavities and enhanced cavity shapes for semiconductor devicesMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 20, 2001·32 cites·22 claims
- 1573US5730835AFacet etch for improved step coverage of integrated circuit contactsMICRON TECHNOLOGY INC·Filed 1996·Granted Mar 24, 1998·32 cites·34 claims
- 1671US7935999B2Memory deviceMICRON TECHNOLOGY INC·Filed 2010·Granted May 3, 2011·2 cites·31 claims
- 1771US6914017B1Residue free overlay targetMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 5, 2005·10 cites·6 claims
- 1869US5732023ASRAM cell employing substantially vertically elongated pull-up resistorsMICRON TECHNOLOGY INC·Filed 1997·Granted Mar 24, 1998·23 cites·8 claims
- 1965US7488664B2Capacitor structure for two-transistor DRAM memory cell and method of forming sameMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 10, 2009·3 cites·9 claims
- 2065US5227321AMethod for forming MOS transistorsMICRON TECHNOLOGY INC·Filed 1992·Granted Jul 13, 1993·43 cites·18 claims
- 2160US6235639B1Method of making straight wall containers and the resultant containersMICRON TECHNOLOGY INC·Filed 1998·Granted May 22, 2001·19 cites·49 claims
- 2257US5699292ASRAM cell employing substantially vertically elongated pull-up resistorsMICRON TECHNOLOGY INC·Filed 1996·Granted Dec 16, 1997·13 cites·14 claims
- 2356US6103020ADual-masked field isolationMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 15, 2000·16 cites·6 claims
- 2454US6541809B1Method of making straight wall containers and the resultant containersMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 1, 2003·3 cites·17 claims
- 2553US5985767AFacet etch for improved step coverage of integrated circuit contactsMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 16, 1999·13 cites·34 claims
- 2651US7247919B1Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxides MOSFETsMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 24, 2007·2 cites·22 claims
- 2751US6040209ASemiconductor memory device and method of forming transistors in a peripheral circuit of the semiconductor memory deviceMICRON TECHNOLOGY INC·Filed 1997·Granted Mar 21, 2000·8 cites·3 claims
- 2851US2006017074A1Raised-lines overlay semiconductor targets and method of making the sameBALUSWAMY PARY·Filed 2005·Application pending·0 cites
- 2951US2006263964A1Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxide MOSFETsMOULI CHANDRA V·Filed 2006·Application pending·0 cites
- 3048US2014231894A1Method of forming a dram array of devices with vertically integrated recessed access device and digitlineMICRON TECHNOLOGY INC·Filed 2014·Application pending·0 cites
- 3147US6271073B1Method of forming transistors in a peripheral circuit of a semiconductor memory deviceMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 7, 2001·6 cites·1 claims
- 3244US2005070069A1Raised-lines overlay semiconductor targets and method of making the sameFiled 2004·Application pending·0 cites
- 3340US5808941ASRAM cell employing substantially vertically elongated pull-up resistorsMICRON TECHNOLOGY INC·Filed 1997·Granted Sep 15, 1998·5 cites·8 claims
- 3440US5751630ASRAM cell employing substantially vertically elongated pull-up resistorsMICRON TECHNOLOGY INC·Filed 1997·Granted May 12, 1998·6 cites·8 claims
- 3538US5844835ASCRAM cell employing substantially vertically elongated pull-up resistorsMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 1, 1998·3 cites·6 claims
- 3638US2001002710A1Method of forming high aspect ratio structures for semiconductor devicesFiled 2001·Application pending·0 cites
- 3737US5844838ASRAM cell employing substantially vertically elongated pull-up resistorsMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 1, 1998·3 cites·12 claims
- 3834US5943269ASRAM cell employing substantially vertically elongated pull-up resistorsMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 24, 1999·3 cites·8 claims
- 3933US6252268B1Method of forming transistors in a peripheral circuit of a semiconductor memory deviceMICRON TECHNOLOGY INC·Filed 1998·Granted Jun 26, 2001·1 cites·13 claims
- 4032US5995411ASRAM cell employing substantially vertically elongated pull-up resistorsMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 30, 1999·1 cites·8 claims
- 4130US5969994ASram cell employing substantially vertically elongated pull-up resistorsMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 19, 1999·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →