Inventor · disambiguated record

Ching I Li

Also filed as: LI CHING I · LI CHING-IANG

44 granted patents·35 pending applications·73 citations·filing 2007–2025

96Inventor score

Technology areasH10P H10F H10W H10D H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD47 UNITED MICROELECTRONICS CORP17 YANG CHAN-LON4 ADVANCED ION BEAM TECH INC3 LIAO CHIN-I2

Top patents by PatentIndex Score

79 records

0196US11784204B2Enhanced trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 10, 2023·4 cites·20 claims
0295US9450078B1Forming punch-through stopper regions in finFET devicesADVANCED ION BEAM TECH INC·Filed 2015·Granted Sep 20, 2016·20 cites·28 claims
0394US11916022B2Photolithography alignment process for bonded wafersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
0494US11869761B2Back-side deep trench isolation structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 9, 2024·3 cites·20 claims
0594US7473606B2Method for fabricating metal-oxide semiconductor transistorsUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jan 6, 2009·27 cites·17 claims
0693US11721774B2Full well capacity for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·3 cites·20 claims
0790US11817469B2Light absorbing layer to enhance P-type diffusion for DTI in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
0887US9859164B1Method for manufacturing finsUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jan 2, 2018·5 cites·11 claims
0987US2025364315A1Multilayer isolation structure for high voltage silicon-on-insulator deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1086US2025318305A1Photodiode structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1183US12364046B2Photodiode structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
1282US12230585B2Photolithography alignment process for bonded wafersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 18, 2025·0 cites·20 claims
1382US2025338657A1Deep trench isolation structure for image sensor narrowed by epitaxy growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1482US2025331323A1Passivation for a vertical transfer gate in a pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1581US2025331319A1Deep trench isolation structure and methods for fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1681US2025344547A1Improved full well capacity for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1781US2025366243A1Pre-cleaning for a deep trench isolation structure in a pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1880US2025359384A1Passivation for a deep trench isolation structure in a pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1978US2024379713A1Back-side deep trench isolation structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2078US2024371902A1Isolation epitaxial bi-layer for backside deep trench isolation structure in an image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2177US12500206B2Mechanical wafer alignment detection for bonding processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
2277US2024379692A1Image sensor with diffusion barrier structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2376US12426390B2Passivation for a vertical transfer gate in a pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
2475US2025142847A1Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2574US12408448B2Deep trench isolation structure and methods for fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
2674US12389710B2Full well capacity for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
2774US2024355855A1Deep trench isolation structure for image sensor narrowed by epitaxy growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2873US11664425B2P-type field effect transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted May 30, 2023·0 cites·6 claims
2973US2024387614A1Metal-insulator-metal capacitor and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3073US2024379321A1Ion implantation systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3172US12349492B2Photodiode structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 1, 2025·0 cites·20 claims
3272US11682578B2Multilayer isolation structure for high voltage silicon-on-insulator deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·0 cites·20 claims
3371US12484327B2Pre-cleaning for a deep trench isolation structure in a pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
3471US2025157943A1Photolithography alignment process for bonded wafersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3570US12439709B2Image sensor with diffusion barrier structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
3670US12125665B2Ion implantation systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 22, 2024·0 cites·20 claims
3770US11688717B2Mechanical wafer alignment detection for bonding processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
3870US8883620B1Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation processSINHA ASHWINI K·Filed 2013·Granted Nov 11, 2014·2 cites·20 claims
3969US12328886B2Metal-insulator-metal capacitor and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
4069US12218184B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
4169US2022384496A1Back-side deep trench isolation structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
4268US12074186B2Isolation epitaxial bi-layer for backside deep trench isolation structure in an image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
4367US2023411425A1Light absorbing layer to enhance p-type diffusion for dti in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4466US11271078B2P-type field effect transistor having channel region with top portion and bottom portionUNITED MICROELECTRONICS CORP·Filed 2020·Granted Mar 8, 2022·0 cites·1 claims
4565US12002813B2Method for forming semiconductor-on-insulator (SOI) substrate by cleaving a multilayer structure along voids to separate a substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·0 cites·20 claims
4665US2023369367A1Passivation for a deep trench isolation structure in a pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
4762US7776728B2Rapid thermal process method and rapid thermal process deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted Aug 17, 2010·1 cites·17 claims
4862US2025280617A1Image sensor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4961US8076210B2Method for fabricating metal-oxide semiconductor transistorsHSIAO TSAI-FU·Filed 2011·Granted Dec 13, 2011·1 cites·5 claims
5060US9431247B2Method for ion implantationADVANCED ION BEAM TECH INC·Filed 2015·Granted Aug 30, 2016·1 cites·14 claims

Showing the top 50 of 79 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →