Inventor · disambiguated record
Chin-I Liao
Also filed as: LIAO CHIN-I
36 granted patents·10 pending applications·242 citations·filing 1999–2016
97Inventor score
Files withUNITED MICROELECTRONICS CORP21LIAO CHIN-I14TAIWAN SEMICONDUCTOR MFG CO LTD5YANG CHAN-LON2CHIANG JIH-SHUN1
Top patents by PatentIndex Score
46 records- 0196US9450047B1Semiconductor structure having enlarged regrowth regions and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·22 cites·20 claims
- 0296US9337193B2Semiconductor device with epitaxial structuresUNITED MICROELECTRONICS CORP·Filed 2015·Granted May 10, 2016·12 cites·11 claims
- 0394US9123744B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Sep 1, 2015·21 cites·21 claims
- 0494US9006805B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2013·Granted Apr 14, 2015·14 cites·19 claims
- 0593US9620503B1Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·9 cites·20 claims
- 0693US8754448B2Semiconductor device having epitaxial layerLIAO CHIN-I·Filed 2011·Granted Jun 17, 2014·18 cites·9 claims
- 0792US8796695B2Multi-gate field-effect transistor and process thereofLIAO CHIN-I·Filed 2012·Granted Aug 5, 2014·18 cites·10 claims
- 0892US8647953B2Method for fabricating first and second epitaxial cap layersLIAO CHIN-I·Filed 2011·Granted Feb 11, 2014·17 cites·19 claims
- 0987US9064893B2Gradient dopant of strained substrate manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jun 23, 2015·7 cites·18 claims
- 1086US7736982B2Method for forming a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jun 15, 2010·12 cites·20 claims
- 1185US9070635B2Removing methodUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jun 30, 2015·6 cites·15 claims
- 1285US8710632B2Compound semiconductor epitaxial structure and method for fabricating the sameYU TIEN-WEI·Filed 2012·Granted Apr 29, 2014·13 cites·16 claims
- 1383US8674433B2Semiconductor processLIAO CHIN-I·Filed 2011·Granted Mar 18, 2014·8 cites·13 claims
- 1482USD421650SElectrical fanLIAO CHIN-I·Filed 1999·Granted Mar 14, 2000·24 cites·1 claims
- 1581US8476169B2Method of making strained silicon channel semiconductor structureYANG CHAN-LON·Filed 2011·Granted Jul 2, 2013·4 cites·14 claims
- 1678US8440511B1Method for manufacturing multi-gate transistor deviceLIAO CHIN-I·Filed 2011·Granted May 14, 2013·5 cites·11 claims
- 1776US9614085B2Semiconductor structure having enlarged regrowth regions and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 4, 2017·2 cites·20 claims
- 1871US8928126B2Epitaxial layerUNITED MICROELECTRONICS CORP·Filed 2012·Granted Jan 6, 2015·2 cites·8 claims
- 1970US7357686B2Boat propeller with adjustable blades for adjusting the pitch thereofLIN HUEI-JENG·Filed 2005·Granted Apr 15, 2008·14 cites·7 claims
- 2068US9112030B2Epitaxial structure and process thereof for non-planar transistorUNITED MICROELECTRONICS CORP·Filed 2013·Granted Aug 18, 2015·2 cites·17 claims
- 2166US8664069B2Semiconductor structure and process thereofLIAO CHIN-I·Filed 2012·Granted Mar 4, 2014·1 cites·6 claims
- 2265US9543439B2Semiconductor device structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 10, 2017·1 cites·16 claims
- 2361US8519390B2Test pattern for measuring semiconductor alloys using X-ray DiffractionLIAO CHIN-I·Filed 2011·Granted Aug 27, 2013·1 cites·20 claims
- 2459US8921206B2Semiconductor processYANG CHAN-LON·Filed 2011·Granted Dec 30, 2014·1 cites·18 claims
- 2559US8716750B2Semiconductor device having epitaxial structuresLIAO CHIN-I·Filed 2011·Granted May 6, 2014·1 cites·19 claims
- 2657US8884346B2Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2014·Granted Nov 11, 2014·0 cites·11 claims
- 2756US8927376B2Semiconductor device and method of forming epitaxial layerUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jan 6, 2015·0 cites·9 claims
- 2855US8853740B2Strained silicon channel semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Oct 7, 2014·0 cites·7 claims
- 2952US8999793B2Multi-gate field-effect transistor processUNITED MICROELECTRONICS CORP·Filed 2014·Granted Apr 7, 2015·0 cites·7 claims
- 3051US2013264585A1Semiconductor device with stress-providing structureUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 3151US2008293222A1Method for forming silicon-germanium epitaxial layerUNITED MICROELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 3250US8481391B2Process for manufacturing stress-providing structure and semiconductor device with such stress-providing structureLIAO CHIN-I·Filed 2011·Granted Jul 9, 2013·0 cites·11 claims
- 3350US2013122691A1Method for making semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2012·Application pending·0 cites
- 3448US7858529B2Treatment method of semiconductor, method for manufacturing MOS, and MOS structureUNITED MICROELECTRONICS CORP·Filed 2006·Granted Dec 28, 2010·0 cites·40 claims
- 3547US8709910B2Semiconductor processLIAO CHIN-I·Filed 2012·Granted Apr 29, 2014·0 cites·18 claims
- 3647US2014191285A1Semiconductor device having epitaxial structuresUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 3746US2012080721A1Semiconductor structure and method for making the sameLIAO CHIN-I·Filed 2010·Application pending·0 cites
- 3845US8962433B2MOS transistor processLIAO CHIN-I·Filed 2012·Granted Feb 24, 2015·0 cites·9 claims
- 3945US7560350B2Method for forming strained semiconductor device and method for forming source/drain regionUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jul 14, 2009·0 cites·10 claims
- 4045US2008076236A1Method for forming silicon-germanium epitaxial layerCHIANG JIH-SHUN·Filed 2006·Application pending·0 cites
- 4143US2008233722A1Method of forming selective area compound semiconductor epitaxial layerUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 4242US2015145067A1Fin structureUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 4341US2015044831A1Semiconductor processUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 4438US9553191B1Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·0 cites·18 claims
- 4537US6139270AElectric fanFiled 1999·Granted Oct 31, 2000·7 cites·8 claims
- 4636US2013069172A1Semiconductor device and method for fabricating the sameLIAO CHIN-I·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →