Semiconductor device with stress-providing structure

Abstract

A semiconductor device is provided. The semiconductor device includes a substrate, a recess and a stress-providing structure. A channel structure is formed in the substrate. The recess is formed in the substrate and arranged beside the channel structure. The recess has a round inner surface. The stress-providing structure is formed within the recess. Corresponding to the profile of the round inner surface of the recess, the stress-providing structure has a round outer surface.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a substrate with a channel structure; and   a stress-providing structure formed within a recess, wherein the recess was formed in the substrate and arranged beside the channel structure, wherein the recess has a round inner surface, the stress-providing structure is filling the recess and has a round outer surface corresponding to the round inner surface of the recess.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the semiconductor device further comprises a gate structure, which is formed over the channel structure. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the recess has a depth from 600 angstroms to 650 angstroms. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein the substrate is a silicon substrate. 
     
     
         5 . The semiconductor device according to  claim 1 , wherein the channel structure is a p-type channel structure, and the stress-providing structure is made of silicon germanium (SiGe) or germanium. 
     
     
         6 . The semiconductor device according to  claim 1 , wherein the channel structure is an n-type channel structure, and the stress-providing structure is made of silicon carbide (SiC).