Inventor · disambiguated record
Chun-Feng Nieh
Also filed as: NIEH CHUN-FENG
81 granted patents·24 pending applications·553 citations·filing 2002–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD64TAIWAN SEMICONDUCTOR MFG19NIEH CHUN-FENG7CHEN CHIEN HAO3CHEN KUAN-YU1
Top patents by PatentIndex Score
105 records- 0199US8497177B1Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 30, 2013·252 cites·20 claims
- 0298US11043580B2Method of manufacturing semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 22, 2021·6 cites·20 claims
- 0398US9607838B1Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 28, 2017·25 cites·20 claims
- 0497US11677012B2Method of manufacturing semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·4 cites·20 claims
- 0597US11361977B2Gate structure of semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·3 cites·20 claims
- 0696US11901235B2Ion implantation for nano-FETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
- 0795US11670683B2Semiconductor device with implant and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·2 cites·20 claims
- 0894US10714598B2Method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 14, 2020·8 cites·20 claims
- 0993US11348835B2Ion implantation for nano-FETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·2 cites·20 claims
- 1093US10515966B2Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·5 cites·20 claims
- 1193US10056383B2Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 21, 2018·6 cites·20 claims
- 1293US7838887B2Source/drain carbon implant and RTA anneal, pre-SiGe depositionTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 23, 2010·26 cites·10 claims
- 1392US10115808B2finFET device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 30, 2018·6 cites·20 claims
- 1492US9099388B2III-V multi-channel FinFETsLIN HUNG-TA·Filed 2011·Granted Aug 4, 2015·13 cites·17 claims
- 1592US8404546B2Source/drain carbon implant and RTA anneal, pre-SiGe depositionWOON WEI-YEN·Filed 2010·Granted Mar 26, 2013·35 cites·16 claims
- 1691US11450757B2FinFET device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·2 cites·20 claims
- 1791US10163657B1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·4 cites·20 claims
- 1891US7528028B2Super anneal for process induced strain modulationTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 5, 2009·22 cites·18 claims
- 1990US9252271B2Semiconductor device and method of makingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 2, 2016·10 cites·20 claims
- 2090US9099495B1Formation of high quality fin in 3D structure by way of two-step implantationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 4, 2015·8 cites·20 claims
- 2190US2025344489A1Dual Dopant Source/Drain Regions and Methods of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2289US10770570B2FinFET device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 8, 2020·4 cites·20 claims
- 2389US7482211B2Junction leakage reduction in SiGe process by implantationTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 27, 2009·16 cites·19 claims
- 2488US9105570B2Methods for introducing carbon to a semiconductor structureSU YU-CHEN·Filed 2012·Granted Aug 11, 2015·14 cites·20 claims
- 2587US8569139B2Method of manufacturing strained source/drain structuresNIEH CHUN-FENG·Filed 2010·Granted Oct 29, 2013·8 cites·20 claims
- 2687US2025344425A1Source/Drain Structure of Semiconductor Device and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2786US9653581B2Semiconductor device and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·4 cites·20 claims
- 2885US11348792B2Reduce well dopant loss in FinFETs through co-implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 31, 2022·1 cites·20 claims
- 2985US9202693B2Fabrication of ultra-shallow junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 1, 2015·9 cites·17 claims
- 3084US12021082B2Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 3184US11935793B2Dual dopant source/drain regions and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 19, 2024·1 cites·18 claims
- 3284US11011428B2Method for fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·2 cites·20 claims
- 3384US7498642B2Profile confinement to improve transistor performanceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Mar 3, 2009·11 cites·15 claims
- 3484US2024379446A1Dual Dopant Source/Drain Regions and Methods of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3583US10763363B2Gradient doped region of recessed fin forming a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·3 cites·20 claims
- 3682US8487354B2Method for improving selectivity of epi processCHEN KUAN-YU·Filed 2009·Granted Jul 16, 2013·6 cites·20 claims
- 3781US12255101B2Ion implantation of nanostructures for nano-FETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 18, 2025·0 cites·20 claims
- 3881US12100738B2Semiconductor device with implant and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 3981US10916546B2Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 9, 2021·1 cites·20 claims
- 4081US10510619B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·3 cites·20 claims
- 4180US2024387700A1Source/Drain Structure of Semiconductor Device and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4280US2024249944A1Reduce well dopant loss in finfets through co-implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4379US2025120146A1Semiconductor device having a doped fin wellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4478US8629037B2Forming a protective film on a back side of a silicon wafer in a III-V family fabrication processNIEH CHUN-FENG·Filed 2011·Granted Jan 14, 2014·5 cites·18 claims
- 4578US2024258114A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4677US12211701B2Gate structure of semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 4777US11984322B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·0 cites·20 claims
- 4877US11978634B2Reduce well dopant loss in FinFETs through co-implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·0 cites·20 claims
- 4977US11031293B2Method for fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·1 cites·20 claims
- 5076US12211901B2Semiconductor device having a doped fin wellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
Showing the top 50 of 105 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →