Inventor · disambiguated record
Christian Philipp Sandow
Also filed as: SANDOW CHRISTIAN PHILIPP
45 granted patents·5 pending applications·66 citations·filing 2013–2025
96Inventor score
Files withINFINEON TECHNOLOGIES AG33INFINEON TECHNOLOGIES AUSTRIA AG14INFINEON TECH DRESDEN GMBH & CO KG3
Top patents by PatentIndex Score
50 records- 0197US10469057B1Method for self adaption of gate current controls by capacitance measurement of a power transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Nov 5, 2019·24 cites·23 claims
- 0292US9859408B2Power semiconductor transistor having fully depleted channel regionINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 2, 2018·6 cites·17 claims
- 0391US10326009B2Power semiconductor transistor having fully depleted channel regionINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jun 18, 2019·5 cites·23 claims
- 0490US10141404B2Power semiconductor device having fully depleted channel regionINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 27, 2018·6 cites·21 claims
- 0589US11610976B2Semiconductor device including a transistor with one or more barrier regionsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Mar 21, 2023·2 cites·20 claims
- 0688US10134835B2Power semiconductor device having fully depleted channel regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 20, 2018·5 cites·22 claims
- 0785US9525029B2Insulated gate bipolar transistor device, semiconductor device and method for forming said devicesINFINEON TECHNOLOGIES AG·Filed 2015·Granted Dec 20, 2016·3 cites·20 claims
- 0884US9166027B2IGBT with reduced feedback capacitanceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Oct 20, 2015·6 cites·27 claims
- 0983US10665706B2Power semiconductor transistorINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 26, 2020·2 cites·20 claims
- 1082US11581428B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 14, 2023·1 cites·19 claims
- 1180US10340336B2Power semiconductor device having fully depleted channel regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 2, 2019·2 cites·13 claims
- 1278US2025220937A1Semiconductor device having a transistor with active mesas and dummy mesasINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 1376US12283621B2Semiconductor device having a transistor with trenches and mesasINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 1474US2024413229A1Semiconductor device having first trenches with a gate electrode and second trenches with a source electrodeINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1573US10840362B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Nov 17, 2020·1 cites·16 claims
- 1672US12224316B2Semiconductor device including insulated gate bipolar transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Feb 11, 2025·0 cites·11 claims
- 1770US11038016B2Insulated gate bipolar transistor device having a fin structureINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jun 15, 2021·0 cites·18 claims
- 1869US12382677B2Power semiconductor device having nanometer-scale structureINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 5, 2025·0 cites·14 claims
- 1969US11276772B2Power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Mar 15, 2022·0 cites·20 claims
- 2068US10644141B2Power semiconductor device with dV/dt controllabilityINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted May 5, 2020·1 cites·23 claims
- 2167US12074212B2Semiconductor device including a plurality of trenchesINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 27, 2024·0 cites·10 claims
- 2266US9819341B2Semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 14, 2017·1 cites·20 claims
- 2365US9859272B2Semiconductor device with a reduced band gap zoneINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 2, 2018·1 cites·20 claims
- 2464US10748995B2Insulated gate bipolar Transistor device having a fin structureINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 18, 2020·0 cites·13 claims
- 2563US11444158B2Semiconductor device including an anode contact region having a varied doping concentrationINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Sep 13, 2022·0 cites·13 claims
- 2662US10923578B2Semiconductor device comprising a barrier regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Feb 16, 2021·0 cites·11 claims
- 2762US10672767B2Power semiconductor device having different channel regionsINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 2, 2020·0 cites·20 claims
- 2862US9978837B2Insulated gate bipolar transistor device having a fin structureINFINEON TECHNOLOGIES AG·Filed 2016·Granted May 22, 2018·0 cites·20 claims
- 2961US11869985B2Diode including a plurality of trenchesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jan 9, 2024·0 cites·10 claims
- 3061US11171202B2Power semiconductor device having fully depleted channel regionsINFINEON TECHNOLOGIES AG·Filed 2019·Granted Nov 9, 2021·0 cites·4 claims
- 3160US12266680B2Voltage-controlled switching device with resistive pathINFINEON TECH DRESDEN GMBH & CO KG·Filed 2021·Granted Apr 1, 2025·0 cites·19 claims
- 3259US10388734B2Insulated gate bipolar transistor device having a fin structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Aug 20, 2019·0 cites·20 claims
- 3357US10396074B2Power semiconductor device having different channel regionsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Aug 27, 2019·0 cites·22 claims
- 3456US10453918B2Power semiconductor device having cells with channel regions of different conductivity typesINFINEON TECHNOLOGIES AG·Filed 2018·Granted Oct 22, 2019·0 cites·20 claims
- 3554US10367057B2Power semiconductor device having fully depleted channel regionsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jul 30, 2019·0 cites·20 claims
- 3654US10083960B2Power semiconductor device having fully depleted channel regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Sep 25, 2018·0 cites·24 claims
- 3753US2024332407A1Power semiconductor device including a diode areaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 3851US11575032B2Vertical power semiconductor device and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2021·Granted Feb 7, 2023·0 cites·19 claims
- 3950US11296213B2Reverse-conducting igbt having a reduced forward recovery voltageINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Apr 5, 2022·0 cites·29 claims
- 4049US2025324628A1Power Semiconductor Device and Method of Producing a Power Semiconductor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 4149US2024234414A9Rc-igbt and manufacturing method of rc-igbtINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 4248US11538906B2Diode with structured barrier regionINFINEON TECHNOLOGIES AG·Filed 2020·Granted Dec 27, 2022·0 cites·18 claims
- 4348US11004963B2Insulated gate bipolar transistor having first and second field stop zone portions and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2018·Granted May 11, 2021·0 cites·25 claims
- 4448US9741795B2IGBT having at least one first type transistor cell and reduced feedback capacitanceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Aug 22, 2017·0 cites·22 claims
- 4547US11398472B2RC IGBT with an IGBT section and a diode sectionINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jul 26, 2022·0 cites·22 claims
- 4647US11264459B2Power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Mar 1, 2022·0 cites·16 claims
- 4744US11469317B2Rc igbtINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Oct 11, 2022·0 cites·20 claims
- 4844US11011629B2Power semiconductor switch with improved controllabilityINFINEON TECH DRESDEN GMBH & CO KG·Filed 2019·Granted May 18, 2021·0 cites·22 claims
- 4942US9997517B2Power semiconductor device having fully depleted channel regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jun 12, 2018·0 cites·20 claims
- 5036US10950718B2IGBT with fully depletable n- and p-channel regionsINFINEON TECH DRESDEN GMBH & CO KG·Filed 2018·Granted Mar 16, 2021·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →