Inventor · disambiguated record

Cheng-Yuan Tsai

Also filed as: TSAI CHENG-YUAN · TSAI CHENG-YUAN-CHEN

251 granted patents·53 pending applications·1,450 citations·filing 1999–2025

99Inventor score

Technology areasH10W H10P H01L H10N H10D

Files withTAIWAN SEMICONDUCTOR MFG CO LTD234 UNITED MICROELECTRONICS CORP25 TAIWAN SEMICONDUCTOR MFG14 CHEN NENG-KUO7 CHEN CHIH-MING3

Top patents by PatentIndex Score

304 records

0199US10164182B1Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·36 cites·20 claims
0298US11715674B2Trim wall protection method for multi-wafer stackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·4 cites·20 claims
0398US11610812B2Multi-wafer capping layer for metal arcing protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 21, 2023·7 cites·20 claims
0498US11152276B2Trim wall protection method for multi-wafer stackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 19, 2021·17 cites·20 claims
0598US11127635B1Techniques for wafer stack processingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 21, 2021·12 cites·20 claims
0698US10163651B1Structure and method to expose memory cells with different sizesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·32 cites·20 claims
0797US11664411B2Semiconductor structure having integrated inductor thereinTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·4 cites·20 claims
0897US11581254B2Three dimensional MIM capacitor having a comb structure and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·4 cites·20 claims
0997US11018297B2Memory device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 25, 2021·3 cites·20 claims
1097US11011600B2Semiconductor structure having integrated inductor thereinTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·5 cites·20 claims
1197US10529913B1Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·15 cites·20 claims
1297US7655532B1STI film property using SOD post-treatmentTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Feb 2, 2010·54 cites·13 claims
1396US12127483B2Doped sidewall spacer/etch stop layer for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 22, 2024·2 cites·20 claims
1496US12027554B2Composite deep trench isolation structure in an image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 2, 2024·3 cites·20 claims
1596US11844226B2FeRAM with laminated ferroelectric film and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·2 cites·20 claims
1696US11758830B2Memory device structure with protective elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·2 cites·20 claims
1796US11721794B2Method for manufacturing reflective structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 8, 2023·2 cites·20 claims
1896US11362271B2Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·3 cites·20 claims
1996US9793243B2Buffer layer(s) on a stacked structure having a viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 17, 2017·17 cites·20 claims
2096US9704904B2Deep trench isolation structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 11, 2017·22 cites·20 claims
2196US9490158B2Bond chuck, methods of bonding, and tool including bond chuckTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 8, 2016·15 cites·20 claims
2296US9431609B2Oxide film scheme for RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 30, 2016·30 cites·20 claims
2396US9257642B1Protective sidewall techniques for RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 9, 2016·18 cites·19 claims
2496US8816358B1Plasmonic nanostructures for organic image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 26, 2014·30 cites·20 claims
2596US8319311B2Hybrid STI gap-filling approachCHEN NENG-KUO·Filed 2010·Granted Nov 27, 2012·33 cites·32 claims
2695US11961545B2Circuit design and layout with high embedded memory densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·2 cites·20 claims
2795US11545202B2Circuit design and layout with high embedded memory densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·3 cites·20 claims
2895US11430951B2Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·3 cites·20 claims
2995US10734285B2Bonding support structure (and related process) for wafer stackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·11 cites·20 claims
3095US10164001B1Semiconductor structure having integrated inductor thereinTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·11 cites·20 claims
3195US9425301B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·14 cites·17 claims
3294US11522066B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·2 cites·20 claims
3394US9893120B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·9 cites·20 claims
3494US9761799B2Bottom electrode structure for improved electric field uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·10 cites·20 claims
3594US9647207B2Resistive random access memory (RRAM) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·11 cites·20 claims
3694US9577191B2RRAM cell bottom electrode formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 21, 2017·11 cites·20 claims
3794US9502649B2Bottom electrode structure for improved electric field uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·10 cites·20 claims
3894US9159907B2Hybrid film for protecting MTJ stacks of MRAMTANG BANG-TAI·Filed 2011·Granted Oct 13, 2015·19 cites·18 claims
3994US8141737B1Mesh containerTSAI CHENG-YUAN·Filed 2010·Granted Mar 27, 2012·40 cites·3 claims
4094US2025366381A1Memory device structure with data storage elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4193US10522647B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·5 cites·20 claims
4293US10505107B2Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·5 cites·20 claims
4393US10319768B2Image sensor scheme for optical and electrical improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 11, 2019·6 cites·20 claims
4493US9847401B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 19, 2017·14 cites·17 claims
4593US9281331B2High dielectric constant structure for the vertical transfer gates of a complementary metal-oxide semiconductor (CMOS) image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 8, 2016·16 cites·12 claims
4693US8048813B2Method of reducing delamination in the fabrication of small-pitch devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 1, 2011·20 cites·19 claims
4792US11183627B2MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 23, 2021·2 cites·20 claims
4892US10818857B2Organic photosensitive device with an electron-blocking and hole-transport layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 27, 2020·4 cites·20 claims
4992US10811600B2Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 20, 2020·4 cites·20 claims
5092US10804464B2Method of forming memory device with diffusion barrier and capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 13, 2020·3 cites·20 claims

Showing the top 50 of 304 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →