Inventor · disambiguated record
Chun Yan
Also filed as: YAN CHUN · YAN CHUN-GUANG
28 granted patents·7 pending applications·2,071 citations·filing 1997–2021
97Inventor score
Top patents by PatentIndex Score
35 records- 0198US9114438B2Copper residue chamber cleanAPPLIED MATERIALS INC·Filed 2013·Granted Aug 25, 2015·184 cites·13 claims
- 0298US6080529AMethod of etching patterned layers useful as masking during subsequent etching or for damascene structuresAPPLIED MATERIALS INC·Filed 1998·Granted Jun 27, 2000·551 cites·9 claims
- 0397US6547977B1Method for etching low k dielectricsAPPLIED MATERIALS INC·Filed 2000·Granted Apr 15, 2003·320 cites·32 claims
- 0496US11043393B2Ozone treatment for selective silicon nitride etch over siliconMATTSON TECH INC·Filed 2020·Granted Jun 22, 2021·5 cites·20 claims
- 0596US6458516B1Method of etching dielectric layers using a removable hardmaskAPPLIED MATERIALS INC·Filed 2000·Granted Oct 1, 2002·113 cites·23 claims
- 0696US6352049B1Plasma assisted processing chamber with separate control of species densityAPPLIED MATERIALS INC·Filed 1998·Granted Mar 5, 2002·498 cites·24 claims
- 0796US6331380B1Method of pattern etching a low K dielectric layerAPPLIED MATERIALS INC·Filed 2000·Granted Dec 18, 2001·159 cites·44 claims
- 0894US11276560B2Spacer etching processMATTSON TECH INC·Filed 2020·Granted Mar 15, 2022·4 cites·17 claims
- 0992US10090147B2Integrated system and method for source/drain engineeringAPPLIED MATERIALS INC·Filed 2018·Granted Oct 2, 2018·6 cites·19 claims
- 1092US8871107B2Subtractive plasma etching of a blanket layer of metal or metal alloyIBM·Filed 2013·Granted Oct 28, 2014·13 cites·24 claims
- 1185US10177017B1Method for conditioning a processing chamber for steady etching rate controlAPPLIED MATERIALS INC·Filed 2017·Granted Jan 8, 2019·4 cites·17 claims
- 1284US11387115B2Silicon mandrel etch after native oxide punch-throughMATTSON TECH INC·Filed 2019·Granted Jul 12, 2022·4 cites·10 claims
- 1384US9484220B2Sputter etch processing for heavy metal patterning in integrated circuitsIBM·Filed 2013·Granted Nov 1, 2016·6 cites·24 claims
- 1483US7374636B2Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactorAPPLIED MATERIALS INC·Filed 2002·Granted May 20, 2008·21 cites·16 claims
- 1581US6537918B2Method for etching silicon oxynitride and dielectric antireflection coatingsAPPLIED MATERIALS INC·Filed 2001·Granted Mar 25, 2003·22 cites·15 claims
- 1677US7320942B2Method for removal of metallic residue after plasma etching of a metal layerAPPLIED MATERIALS INC·Filed 2002·Granted Jan 22, 2008·19 cites·19 claims
- 1776US6933239B2Method for removing conductive residueAPPLIED MATERIALS INC·Filed 2003·Granted Aug 23, 2005·19 cites·10 claims
- 1874US6649532B1Methods for etching an organic anti-reflective coatingAPPLIED MATERIALS INC·Filed 2002·Granted Nov 18, 2003·16 cites·14 claims
- 1973US6296780B1System and method for etching organic anti-reflective coating from a substrateAPPLIED MATERIALS INC·Filed 1997·Granted Oct 2, 2001·44 cites·11 claims
- 2071US7442114B2Methods for silicon electrode assembly etch rate and etch uniformity recoveryLAM RES CORP·Filed 2004·Granted Oct 28, 2008·14 cites·19 claims
- 2171US7316199B2Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamberAPPLIED MATERIALS INC·Filed 2002·Granted Jan 8, 2008·9 cites·11 claims
- 2259US6620289B1Method and apparatus for asymmetric gas distribution in a semiconductor wafer processing systemAPPLIED MATERIALS INC·Filed 1999·Granted Sep 16, 2003·22 cites·9 claims
- 2357US6291356B1Method for etching silicon oxynitride and dielectric antireflection coatingsAPPLIED MATERIALS INC·Filed 1999·Granted Sep 18, 2001·18 cites·12 claims
- 2456US11649559B2Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrateAPPLIED MATERIALS INC·Filed 2019·Granted May 16, 2023·0 cites·20 claims
- 2552US11651977B2Processing of workpieces using fluorocarbon plasmaMATTSON TECH INC·Filed 2021·Granted May 16, 2023·0 cites·19 claims
- 2650US2020411221A1Magnetic platform and fixing system utilizing sameTRIPLE WIN TECH SHENZHEN CO LTD·Filed 2019·Application pending·0 cites
- 2748US11462413B2Processing of workpieces using deposition process and etch processMATTSON TECH INC·Filed 2020·Granted Oct 4, 2022·0 cites·17 claims
- 2848US10224421B2Self-aligned process for sub-10nm fin formationAPPLIED MATERIALS INC·Filed 2018·Granted Mar 5, 2019·0 cites·20 claims
- 2946US11195718B2Spacer open process by dual plasmaMATTSON TECH INC·Filed 2020·Granted Dec 7, 2021·0 cites·12 claims
- 3044US2020243305A1Post Plasma Gas Injection In A Separation GridMATTSON TECH INC·Filed 2020·Application pending·0 cites
- 3138US2004237997A1Method for removal of residue from a substrateAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3238US2005079703A1Method for planarizing an interconnect structureAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3338US2004229470A1Method for etching an aluminum layer using an amorphous carbon maskAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3437US2005009342A1Method for etching an organic anti-reflective coating (OARC)APPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3537US2004171272A1Method of etching metallic materials to form a tapered profileAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →