Inventor · disambiguated record
Dalong Zhao
Also filed as: ZHAO DALONG
25 granted patents·3 pending applications·144 citations·filing 2010–2024
95Inventor score
Files withMIE FUJITSU SEMICONDUCTOR LTD17SCUDDER LANCE3SUVOLTA INC3THOMPSON SCOTT E2APPLIED MATERIALS INC1
Top patents by PatentIndex Score
28 records- 0194US8569156B1Reducing or eliminating pre-amorphization in transistor manufactureSCUDDER LANCE·Filed 2012·Granted Oct 29, 2013·25 cites·18 claims
- 0293US9112057B1Semiconductor devices with dopant migration suppression and method of fabrication thereofMIE FUJITSU SEMICONDUCTOR LTD·Filed 2012·Granted Aug 18, 2015·17 cites·19 claims
- 0393US9093550B1Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making sameMIE FUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Jul 28, 2015·20 cites·9 claims
- 0492US9478571B1Buried channel deeply depleted channel transistorMIE FUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Oct 25, 2016·10 cites·9 claims
- 0591US8614128B1CMOS structures and processes based on selective thinningTHOMPSON SCOTT E·Filed 2012·Granted Dec 24, 2013·10 cites·18 claims
- 0689US9299698B2Semiconductor structure with multiple transistors having various threshold voltagesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Mar 29, 2016·7 cites·9 claims
- 0789US9196727B2High uniformity screen and epitaxial layers for CMOS devicesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Nov 24, 2015·8 cites·7 claims
- 0888US8877619B1Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefromSUVOLTA INC·Filed 2013·Granted Nov 4, 2014·12 cites·5 claims
- 0983US9368624B2Method for fabricating a transistor with reduced junction leakage currentMIE FUJITSU SEMICONDUCTOR LTD·Filed 2015·Granted Jun 14, 2016·3 cites·1 claims
- 1083US8937005B2Reducing or eliminating pre-amorphization in transistor manufactureSUVOLTA INC·Filed 2013·Granted Jan 20, 2015·4 cites·20 claims
- 1183US8883600B1Transistor having reduced junction leakage and methods of forming thereofTHOMPSON SCOTT E·Filed 2012·Granted Nov 11, 2014·5 cites·13 claims
- 1281US9041126B2Deeply depleted MOS transistors having a screening layer and methods thereofSUVOLTA INC·Filed 2013·Granted May 26, 2015·6 cites·19 claims
- 1380US9786703B2Buried channel deeply depleted channel transistorMIE FUJITSU SEMICONDUCTOR LTD·Filed 2016·Granted Oct 10, 2017·2 cites·7 claims
- 1479US8999861B1Semiconductor structure with substitutional boron and method for fabrication thereofSCUDDER LANCE·Filed 2012·Granted Apr 7, 2015·5 cites·6 claims
- 1576US8778786B1Method for substrate preservation during transistor fabricationSCUDDER LANCE·Filed 2012·Granted Jul 15, 2014·4 cites·19 claims
- 1676US8637955B1Semiconductor structure with reduced junction leakage and method of fabrication thereofWANG LINGQUAN·Filed 2012·Granted Jan 28, 2014·5 cites·20 claims
- 1767US9391076B1CMOS structures and processes based on selective thinningMIE FUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Jul 12, 2016·1 cites·7 claims
- 1866US2025155883A1Process modeling platform for substrate manufacturing systemsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1962US10217838B2Semiconductor structure with multiple transistors having various threshold voltagesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2018·Granted Feb 26, 2019·0 cites·9 claims
- 2059US9812550B2Semiconductor structure with multiple transistors having various threshold voltagesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2017·Granted Nov 7, 2017·0 cites·1 claims
- 2158US9793172B2Reducing or eliminating pre-amorphization in transistor manufactureMIE FUJITSU SEMICONDUCTOR LTD·Filed 2016·Granted Oct 17, 2017·0 cites·6 claims
- 2257US10014387B2Semiconductor structure with multiple transistors having various threshold voltagesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2016·Granted Jul 3, 2018·0 cites·10 claims
- 2357US9991300B2Buried channel deeply depleted channel transistorMIE FUJITSU SEMICONDUCTOR LTD·Filed 2017·Granted Jun 5, 2018·0 cites·2 claims
- 2454US9514940B2Reducing or eliminating pre-amorphization in transistor manufactureMIE FUJITSU SEMICONDUCTOR LTD·Filed 2015·Granted Dec 6, 2016·0 cites·17 claims
- 2554US9105711B2Semiconductor structure with reduced junction leakage and method of fabrication thereofMIE FUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Aug 11, 2015·0 cites·18 claims
- 2651US2016307907A1CMOS Structures and Processes Based on Selective ThinningMIE FUJITSU SEMICONDUCTOR LTD·Filed 2016·Application pending·0 cites
- 2749US9385047B2Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making sameMIE FUJITSU SEMICONDUCTOR LTD·Filed 2015·Granted Jul 5, 2016·0 cites·14 claims
- 2847US2011183079A1Plasma enhanced atomic layer deposition processPENN STATE RES FOUND·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →