Inventor · disambiguated record
Dengliang Yang
Also filed as: YANG DENGLIANG
15 granted patents·2 pending applications·209 citations·filing 2008–2024
92Inventor score
Top patents by PatentIndex Score
17 records- 0197US9837286B2Systems and methods for selectively etching tungsten in a downstream reactorLAM RES CORP·Filed 2016·Granted Dec 5, 2017·104 cites·20 claims
- 0295US9640409B1Self-limited planarization of hardmaskLAM RES CORP·Filed 2016·Granted May 2, 2017·22 cites·32 claims
- 0395US9515156B2Air gap spacer integration for improved fin device performanceLAM RES CORP·Filed 2015·Granted Dec 6, 2016·42 cites·19 claims
- 0492US12272570B2Systems and methods for metastable activated radical selective strip and etch using dual plenum showerheadLAM RES CORP·Filed 2024·Granted Apr 8, 2025·1 cites·19 claims
- 0591US12272571B2Systems and methods for metastable activated radical selective strip and etch using dual plenum showerheadLAM RES CORP·Filed 2024·Granted Apr 8, 2025·1 cites·19 claims
- 0691US12211709B2Systems and methods for metastable activated radical selective strip and etch using dual plenum showerheadLAM RES CORP·Filed 2023·Granted Jan 28, 2025·1 cites·18 claims
- 0791US11694911B2Systems and methods for metastable activated radical selective strip and etch using dual plenum showerheadLAM RES CORP·Filed 2017·Granted Jul 4, 2023·7 cites·35 claims
- 0887US10267728B2Systems and methods for detecting oxygen in-situ in a substrate area of a substrate processing systemLAM RES CORP·Filed 2017·Granted Apr 23, 2019·3 cites·28 claims
- 0986US10147588B2System and method for increasing electron density levels in a plasma of a substrate processing systemLAM RES CORP·Filed 2017·Granted Dec 4, 2018·5 cites·19 claims
- 1083US10727089B2Systems and methods for selectively etching filmLAM RES CORP·Filed 2017·Granted Jul 28, 2020·4 cites·15 claims
- 1183US10283615B2Ultrahigh selective polysilicon etch with high throughputNOVELLUS SYSTEMS INC·Filed 2015·Granted May 7, 2019·4 cites·15 claims
- 1281US11469079B2Ultrahigh selective nitride etch to form FinFET devicesLAM RES CORP·Filed 2017·Granted Oct 11, 2022·3 cites·13 claims
- 1376US8129280B2Substrate device having a tuned work function and methods of forming thereofWANG RONGJUN·Filed 2009·Granted Mar 6, 2012·7 cites·17 claims
- 1471US8384409B2Ultra-thin organic TFT chemical sensor, making thereof, and sensing methodUNIV CALIFORNIA·Filed 2008·Granted Feb 26, 2013·4 cites·18 claims
- 1566US10192751B2Systems and methods for ultrahigh selective nitride etchLAM RES CORP·Filed 2016·Granted Jan 29, 2019·1 cites·28 claims
- 1666US2023084901A1Ultrahigh selective nitride etch to form finfet devicesLAM RES CORP·Filed 2022·Application pending·0 cites
- 1752US2019221654A1Ultrahigh selective polysilicon etch with high throughputNOVELLUS SYSTEMS INC·Filed 2019·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Dengliang Yang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →