Inventor · disambiguated record
Ehren Mannebach
Also filed as: MANNEBACH EHREN · MANNEBACH EHREN M
48 granted patents·47 pending applications·69 citations·filing 2010–2025
97Inventor score
Top patents by PatentIndex Score
95 records- 0199US11239236B2Forksheet transistor architecturesINTEL CORP·Filed 2020·Granted Feb 1, 2022·9 cites·24 claims
- 0298US11348919B2Gate-all-around integrated circuit structures having depopulated channel structures using selective bottom-up approachINTEL CORP·Filed 2020·Granted May 31, 2022·5 cites·23 claims
- 0396US11996411B2Stacked forksheet transistorsINTEL CORP·Filed 2020·Granted May 28, 2024·4 cites·21 claims
- 0496US11437283B2Backside contacts for semiconductor devicesINTEL CORP·Filed 2019·Granted Sep 6, 2022·12 cites·25 claims
- 0595US12107085B2Interconnect techniques for electrically connecting source/drain regions of stacked transistorsINTEL CORP·Filed 2023·Granted Oct 1, 2024·2 cites·20 claims
- 0695US11862636B2Gate-all-around integrated circuit structures having depopulated channel structures using selective bottom-up approachINTEL CORP·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 0794US11664377B2Forksheet transistor architecturesINTEL CORP·Filed 2021·Granted May 30, 2023·2 cites·20 claims
- 0894US11342227B2Stacked transistor structures with asymmetrical terminal interconnectsINTEL CORP·Filed 2020·Granted May 24, 2022·3 cites·20 claims
- 0990US11367722B2Stacked nanowire transistor structure with different channel geometries for stressINTEL CORP·Filed 2018·Granted Jun 21, 2022·6 cites·22 claims
- 1089US12080605B2Backside contacts for semiconductor devicesINTEL CORP·Filed 2022·Granted Sep 3, 2024·1 cites·24 claims
- 1184US12230635B2Gate-all-around integrated circuit structures having depopulated channel structures using selective bottom-up approachINTEL CORP·Filed 2023·Granted Feb 18, 2025·0 cites·26 claims
- 1283US12148806B2Stacked source-drain-gate connection and process for forming suchINTEL CORP·Filed 2024·Granted Nov 19, 2024·0 cites·20 claims
- 1383US11742346B2Interconnect techniques for electrically connecting source/drain regions of stacked transistorsINTEL CORP·Filed 2018·Granted Aug 29, 2023·3 cites·24 claims
- 1482US11676966B2Stacked transistors having device strata with different channel widthsINTEL CORP·Filed 2019·Granted Jun 13, 2023·2 cites·19 claims
- 1582US11348916B2Leave-behind protective layer having secondary purposeINTEL CORP·Filed 2018·Granted May 31, 2022·3 cites·13 claims
- 1681US11764263B2Gate-all-around integrated circuit structures having depopulated channel structures using multiple bottom-up oxidation approachesINTEL CORP·Filed 2019·Granted Sep 19, 2023·2 cites·11 claims
- 1781US11573798B2Stacked transistors with different gate lengths in different device strataINTEL CORP·Filed 2019·Granted Feb 7, 2023·1 cites·23 claims
- 1879US11916118B2Stacked source-drain-gate connection and process for forming suchINTEL CORP·Filed 2023·Granted Feb 27, 2024·0 cites·20 claims
- 1979US8603327B2Analogue ionic liquids for the separation and recovery of hydrocarbons from particulate matterPAINTER PAUL·Filed 2011·Granted Dec 10, 2013·4 cites·20 claims
- 2078US12255137B2Sideways vias in isolation areas to contact interior layers in stacked devicesINTEL CORP·Filed 2024·Granted Mar 18, 2025·0 cites·12 claims
- 2178US12224202B2Forming an oxide volume within a finINTEL CORP·Filed 2023·Granted Feb 11, 2025·0 cites·13 claims
- 2277US2025227956A1Contact resistance reduction in transistor devices with metallization on both sidesINTEL CORP·Filed 2025·Application pending·0 cites
- 2377US2024347610A1Contact resistance reduction in transistor devices with metallization on both sidesINTEL CORP·Filed 2024·Application pending·0 cites
- 2477US2024371700A1Backside contacts for semiconductor devicesINTEL CORP·Filed 2024·Application pending·0 cites
- 2576US8603326B2Systems, methods and compositions for the separation and recovery of hydrocarbons from particulate matterPAINTER PAUL·Filed 2010·Granted Dec 10, 2013·4 cites·16 claims
- 2674US9447329B2Analogue ionic liquids for the separation and recovery of hydrocarbons from particulate matterPENN STATE RES FOUND·Filed 2013·Granted Sep 20, 2016·2 cites·16 claims
- 2773US11672133B2Vertically stacked memory elements with air gapINTEL CORP·Filed 2019·Granted Jun 6, 2023·1 cites·19 claims
- 2873US2024047559A1Gate-all-around integrated circuit structures having depopulated channel structures using bottom-up oxidation approachINTEL CORP·Filed 2023·Application pending·0 cites
- 2973US2024234422A1Stacked forksheet transistorsINTEL CORP·Filed 2024·Application pending·0 cites
- 3072US11894372B2Stacked trigate transistors with dielectric isolation and process for forming suchINTEL CORP·Filed 2023·Granted Feb 6, 2024·0 cites·20 claims
- 3171US11437405B2Transistors stacked on front-end p-type transistorsINTEL CORP·Filed 2018·Granted Sep 6, 2022·1 cites·25 claims
- 3270US2023369399A1Gate-all-around integrated circuit structures having depopulated channel structures using multiple bottom-up oxidation approachesINTEL CORP·Filed 2023·Application pending·0 cites
- 3369US12501684B2Integrated circuit structures with backside self-aligned penetrating conductive source or drain contactINTEL CORP·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 3468US12342574B2Contact resistance reduction in transistor devices with metallization on both sidesINTEL CORP·Filed 2020·Granted Jun 24, 2025·0 cites·16 claims
- 3568US2025227978A1Integrated circuit structures with backside self-aligned penetrating conductive source or drain contactINTEL CORP·Filed 2025·Application pending·0 cites
- 3666US11996408B2Leave-behind protective layer having secondary purposeINTEL CORP·Filed 2022·Granted May 28, 2024·0 cites·18 claims
- 3765US2025221041A1Integrated circuit structure with front-side-guided backside source or drain contactINTEL CORP·Filed 2023·Application pending·0 cites
- 3863US2025228008A1Integrated circuit structure with front-side-guided backside source or drain contactINTEL CORP·Filed 2025·Application pending·0 cites
- 3962US11646352B2Stacked source-drain-gate connection and process for forming suchINTEL CORP·Filed 2019·Granted May 9, 2023·0 cites·25 claims
- 4061US11830933B2Gate-all-around integrated circuit structures having depopulated channel structures using bottom-up oxidation approachINTEL CORP·Filed 2019·Granted Nov 28, 2023·0 cites·11 claims
- 4161US2025301779A1Transistor assemblies with patterned back side-filled isolation regionsINTEL CORP·Filed 2024·Application pending·0 cites
- 4260US11764104B2Forming an oxide volume within a finINTEL CORP·Filed 2019·Granted Sep 19, 2023·0 cites·8 claims
- 4360US11594533B2Stacked trigate transistors with dielectric isolation between first and second semiconductor finsINTEL CORP·Filed 2019·Granted Feb 28, 2023·0 cites·14 claims
- 4457US11942416B2Sideways vias in isolation areas to contact interior layers in stacked devicesINTEL CORP·Filed 2019·Granted Mar 26, 2024·0 cites·16 claims
- 4557US2025311329A1Integrated circuit structures having bidirectional backside interconnectsINTEL CORP·Filed 2024·Application pending·0 cites
- 4656US11552104B2Stacked transistors with dielectric between channels of different device strataINTEL CORP·Filed 2019·Granted Jan 10, 2023·0 cites·19 claims
- 4756US2025311296A1Integrated circuit structure with direct backside source or drain contact and reduced gate depthINTEL CORP·Filed 2024·Application pending·0 cites
- 4856US2025309131A1Integrated circuit structure with backside source or drain contact selectivity using colored hardmasksINTEL CORP·Filed 2024·Application pending·0 cites
- 4955US2025210522A1Air-gapped isolation wallsINTEL CORP·Filed 2023·Application pending·0 cites
- 5055US2024332175A1Backside transistor contact surrounded by oxideINTEL CORP·Filed 2023·Application pending·0 cites
Showing the top 50 of 95 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →