Inventor · disambiguated record
Ernst H. A. Granneman
Also filed as: GRANNEMAN ERNST · GRANNEMAN ERNST H · GRANNEMAN ERNST H A
23 granted patents·6 pending applications·3,490 citations·filing 1990–2015
97Inventor score
Top patents by PatentIndex Score
29 records- 0199US6780704B1Conformal thin films over textured capacitor electrodesASM INTERNAT NV·Filed 1999·Granted Aug 24, 2004·609 cites·38 claims
- 0299US6482733B2Protective layers prior to alternating layer depositionASM MICROCHEMISTRY OY·Filed 2001·Granted Nov 19, 2002·406 cites·28 claims
- 0398US6820570B2Atomic layer deposition reactorASM INT·Filed 2002·Granted Nov 23, 2004·647 cites·13 claims
- 0498US6727169B1Method of making conformal lining layers for damascene metallizationASM INT·Filed 2000·Granted Apr 27, 2004·225 cites·42 claims
- 0598US6686271B2Protective layers prior to alternating layer depositionASM INT·Filed 2002·Granted Feb 3, 2004·245 cites·65 claims
- 0697US6831315B2Conformal thin films over textured capacitor electrodesASM INT·Filed 2001·Granted Dec 14, 2004·128 cites·4 claims
- 0797US6759325B2Sealing porous structuresASM MICROCHEMISTRY OY·Filed 2002·Granted Jul 6, 2004·169 cites·29 claims
- 0895US6861334B2Method of fabricating trench isolation structures for integrated circuits using atomic layer depositionASM INT·Filed 2001·Granted Mar 1, 2005·88 cites·5 claims
- 0995US5354433AMethod for producing a flow of triisobutylaluminum from liquid triisobutylaluminum containing isobuteneASM INT·Filed 1990·Granted Oct 11, 1994·340 cites·2 claims
- 1094US7754013B2Apparatus and method for atomic layer deposition on substratesASM INT·Filed 2006·Granted Jul 13, 2010·20 cites·32 claims
- 1194US6679951B2Metal anneal with oxidation preventionASM INTENAT N V·Filed 2001·Granted Jan 20, 2004·126 cites·36 claims
- 1293US5294572AMethod and apparatus for depositing a layer on a substrateASM INT·Filed 1990·Granted Mar 15, 1994·379 cites·7 claims
- 1392US6699783B2Method for controlling conformality with alternating layer depositionASM INT·Filed 2002·Granted Mar 2, 2004·47 cites·33 claims
- 1482US7153772B2Methods of forming silicide films in semiconductor devicesASM INT·Filed 2004·Granted Dec 26, 2006·27 cites·27 claims
- 1578US7102235B2Conformal lining layers for damascene metallizationASM INT·Filed 2003·Granted Sep 5, 2006·17 cites·31 claims
- 1674US7670944B2Conformal lining layers for damascene metallizationASM INT·Filed 2006·Granted Mar 2, 2010·3 cites·16 claims
- 1761US8002463B2Method and device for determining the temperature of a substrateASM INT·Filed 2008·Granted Aug 23, 2011·4 cites·13 claims
- 1859US7427329B2Temperature control for single substrate semiconductor processing reactorASM INT·Filed 2003·Granted Sep 23, 2008·7 cites·30 claims
- 1958US8367548B2Stable silicide films and methods for making the sameASM INC·Filed 2008·Granted Feb 5, 2013·1 cites·37 claims
- 2057US8034410B2Protective inserts to line holes in parts for semiconductor process equipmentASM INT·Filed 2007·Granted Oct 11, 2011·0 cites·19 claims
- 2154US2007287261A1Trench isolation structures for integrated circuitsASM INT·Filed 2007·Application pending·0 cites
- 2252US7276774B2Trench isolation structures for integrated circuitsASM INT·Filed 2004·Granted Oct 2, 2007·2 cites·14 claims
- 2350US2005092249A1Atomic layer deposition reactorFiled 2004·Application pending·0 cites
- 2449US2009291209A1Apparatus and method for high-throughput atomic layer depositionASM INT·Filed 2008·Application pending·0 cites
- 2548US2004142558A1Apparatus and method for atomic layer deposition on substratesFiled 2003·Application pending·0 cites
- 2645US2016102399A1Apparatus and method for high-throughput atomic layer depositionASM INT·Filed 2015·Application pending·0 cites
- 2744US2004175586A1Conformal thin films over textured capacitor electrodesFiled 2004·Application pending·0 cites
- 2830US8889565B2Selective removal of oxygen from metal-containing materialsNOIRAY JEROME·Filed 2010·Granted Nov 18, 2014·0 cites·6 claims
- 2928US9127340B2Selective oxidation processNOIRAY JEROME·Filed 2010·Granted Sep 8, 2015·0 cites·23 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →