Inventor · disambiguated record
Er-Xuan Ping
Also filed as: PING ER-XUAN
190 granted patents·27 pending applications·2,770 citations·filing 1996–2022
99Inventor score
Files withMICRON TECHNOLOGY INC141CHANGXIN MEMORY TECH INC20APPLIED MATERIALS INC16SANDISK 3D LLC9XU HUIWEN6
Top patents by PatentIndex Score
217 records- 0199US7422635B2Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpiecesMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 9, 2008·483 cites·17 claims
- 0298US6551893B1Atomic layer deposition of capacitor dielectricMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 22, 2003·172 cites·21 claims
- 0397US11569257B2Multi-layer stacks for 3D NAND extendabilityAPPLIED MATERIALS INC·Filed 2020·Granted Jan 31, 2023·4 cites·19 claims
- 0497US7830698B2Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using sameSANDISK 3D LLC·Filed 2008·Granted Nov 9, 2010·74 cites·25 claims
- 0596US6943078B1Method and structure for reducing leakage current in capacitorsMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 13, 2005·98 cites·59 claims
- 0696US6159818AMethod of forming a container capacitor structureMICRON TECHNOLOGY INC·Filed 1999·Granted Dec 12, 2000·88 cites·6 claims
- 0795US7176109B2Method for forming raised structures by controlled selective epitaxial growth of facet using spacerMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 13, 2007·54 cites·100 claims
- 0895US6436818B1Semiconductor structure having a doped conductive layerMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 20, 2002·114 cites·17 claims
- 0993US10700087B2Multi-layer stacks for 3D NAND extendibilityAPPLIED MATERIALS INC·Filed 2018·Granted Jun 30, 2020·8 cites·20 claims
- 1093US6498063B1Even nucleation between silicon and oxide surfaces for thin silicon nitride film growthMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 24, 2002·48 cites·26 claims
- 1192US7647886B2Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambersMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 19, 2010·45 cites·8 claims
- 1292US6797558B2Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layerMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 28, 2004·50 cites·17 claims
- 1392US6448129B1Applying epitaxial silicon in disposable spacer flowMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 10, 2002·46 cites·10 claims
- 1492US6015997ASemiconductor structure having a doped conductive layerMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 18, 2000·87 cites·22 claims
- 1591US8105867B2Self-aligned three-dimensional non-volatile memory fabricationMATAMIS GEORGE·Filed 2009·Granted Jan 31, 2012·22 cites·21 claims
- 1691US7579232B1Method of making a nonvolatile memory device including forming a pillar shaped semiconductor device and a shadow maskSANDISK 3D LLC·Filed 2008·Granted Aug 25, 2009·38 cites·20 claims
- 1791US6716687B2FET having epitaxial silicon growthMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 6, 2004·58 cites·32 claims
- 1890US12101927B2Semiconductor structure and method of forming the same, memory and method of forming the sameCHANGXIN MEMORY TECH INC·Filed 2020·Granted Sep 24, 2024·2 cites·11 claims
- 1990US9023723B2Method of fabricating a gate-all-around word line for a vertical channel DRAMCHANG CHORNG-PING·Filed 2013·Granted May 5, 2015·13 cites·10 claims
- 2090US8551855B2Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the sameXU HUIWEN·Filed 2010·Granted Oct 8, 2013·11 cites·19 claims
- 2190US7342273B2Applying epitaxial silicon in disposable spacer flowMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 11, 2008·11 cites·6 claims
- 2290US6967132B2Methods of forming semiconductor circuitryMICRON TECHNOLOGY INC·Filed 2004·Granted Nov 22, 2005·39 cites·11 claims
- 2389US12075612B2Semiconductor structure and method for forming the same, and memory and method for forming the sameCHANGXIN MEMORY TECH INC·Filed 2020·Granted Aug 27, 2024·2 cites·15 claims
- 2489US6159852AMethod of depositing polysilicon, method of fabricating a field effect transistor, method of forming a contact to a substrate, method of forming a capacitorMICRON TECHNOLOGY INC·Filed 1998·Granted Dec 12, 2000·77 cites·33 claims
- 2588US9991118B2Hybrid carbon hardmask for lateral hardmask recess reductionAPPLIED MATERIALS INC·Filed 2017·Granted Jun 5, 2018·4 cites·19 claims
- 2688US5851875AProcess for forming capacitor array structure for semiconductor devicesMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 22, 1998·44 cites·7 claims
- 2787US9570307B2Methods of doping substrates with ALDAPPLIED MATERIALS INC·Filed 2015·Granted Feb 14, 2017·5 cites·10 claims
- 2887US9530674B2Method and system for three-dimensional (3D) structure fillYIEH ELLIE·Filed 2013·Granted Dec 27, 2016·11 cites·10 claims
- 2986US7771537B2Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD depositionMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 10, 2010·5 cites·13 claims
- 3086US7279398B2Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpiecesMICRON TECHNOLOGY INC·Filed 2006·Granted Oct 9, 2007·6 cites·12 claims
- 3185US10157787B2Method and apparatus for depositing cobalt in a featureAPPLIED MATERIALS INC·Filed 2016·Granted Dec 18, 2018·4 cites·5 claims
- 3285US7056806B2Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpiecesMICRON TECHNOLOGY INC·Filed 2003·Granted Jun 6, 2006·23 cites·31 claims
- 3385US6351005B1Integrated capacitor incorporating high K dielectricMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 26, 2002·31 cites·19 claims
- 3485US6069053AFormation of conductive rugged siliconMICRON TECHNOLOGY INC·Filed 1997·Granted May 30, 2000·45 cites·26 claims
- 3584US9879341B2Method and apparatus for microwave assisted chalcogen radicals generation for 2-D materialsAPPLIED MATERIALS INC·Filed 2016·Granted Jan 30, 2018·4 cites·20 claims
- 3683US8569730B2Carbon-based interface layer for a memory device and methods of forming the sameXU HUIWEN·Filed 2009·Granted Oct 29, 2013·8 cites·8 claims
- 3783US6465373B1Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layerMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 15, 2002·20 cites·54 claims
- 3883US5882979AMethod for forming controllable surface enhanced three dimensional objectsMICRON TECHNOLOGY INC·Filed 1997·Granted Mar 16, 1999·45 cites·16 claims
- 3983US5721171AMethod for forming controllable surface enhanced three dimensional objectsMICRON TECHNOLOGY INC·Filed 1996·Granted Feb 24, 1998·44 cites·21 claims
- 4082US9218973B2Methods of doping substrates with ALDAPPLIED MATERIALS INC·Filed 2013·Granted Dec 22, 2015·5 cites·12 claims
- 4182US9011973B2Methods for depositing oxygen deficient metal filmsAPPLIED MATERIALS INC·Filed 2013·Granted Apr 21, 2015·2 cites·16 claims
- 4282US8023310B2Nonvolatile memory cell including carbon storage element formed on a silicide layerSANDISK 3D LLC·Filed 2009·Granted Sep 20, 2011·13 cites·26 claims
- 4382US6124164AMethod of making integrated capacitor incorporating high K dielectricMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 26, 2000·42 cites·20 claims
- 4481US12048145B2Method of manufacturing semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jul 23, 2024·1 cites·15 claims
- 4581US7199017B2Methods of forming semiconductor circuitryMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 3, 2007·6 cites·15 claims
- 4681US7112544B2Method of atomic layer deposition on plural semiconductor substrates simultaneouslyMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 26, 2006·16 cites·16 claims
- 4780US10943779B2Method and system for three-dimensional (3D) structure fillAPPLIED MATERIALS INC·Filed 2016·Granted Mar 9, 2021·2 cites·6 claims
- 4880US8093123B2Integration methods for carbon films in two- and three-dimensional memories formed therefromXU HUIWEN·Filed 2009·Granted Jan 10, 2012·6 cites·28 claims
- 4980US7969011B2MIIM diodes having stacked structureSANDISK 3D LLC·Filed 2008·Granted Jun 28, 2011·9 cites·26 claims
- 5080US6835674B2Methods for treating pluralities of discrete semiconductor substratesMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 28, 2004·15 cites·20 claims
Showing the top 50 of 217 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →