Inventor · disambiguated record
Guangxiang Jin
Also filed as: JIN GUANGXIANG
11 granted patents·8 pending applications·613 citations·filing 1999–2007
92Inventor score
Top patents by PatentIndex Score
19 records- 0197US6692903B2Substrate cleaning apparatus and methodAPPLIED MATERIALS INC·Filed 2000·Granted Feb 17, 2004·414 cites·49 claims
- 0289US6821907B2Etching methods for a magnetic memory cell stackAPPLIED MATERIALS INC·Filed 2002·Granted Nov 23, 2004·36 cites·27 claims
- 0387US6893893B2Method of preventing short circuits in magnetic film stacksAPPLIED MATERIALS INC·Filed 2002·Granted May 17, 2005·37 cites·35 claims
- 0485US7368394B2Etch methods to form anisotropic features for high aspect ratio applicationsAPPLIED MATERIALS INC·Filed 2006·Granted May 6, 2008·11 cites·20 claims
- 0585US6767824B2Method of fabricating a gate structure of a field effect transistor using an alpha-carbon maskFiled 2003·Granted Jul 27, 2004·34 cites·22 claims
- 0679US6806095B2Method of plasma etching of high-K dielectric materials with high selectivity to underlying layersFiled 2002·Granted Oct 19, 2004·19 cites·17 claims
- 0772US6368517B1Method for preventing corrosion of a dielectric materialAPPLIED MATERIALS INC·Filed 1999·Granted Apr 9, 2002·41 cites·32 claims
- 0871US7094704B2Method of plasma etching of high-K dielectric materialsAPPLIED MATERIALS INC·Filed 2002·Granted Aug 22, 2006·11 cites·42 claims
- 0964US7838434B2Method of plasma etching of high-K dielectric materialsAPPLIED MATERIALS INC·Filed 2006·Granted Nov 23, 2010·1 cites·18 claims
- 1063US7217665B2Method of plasma etching high-K dielectric materials with high selectivity to underlying layersAPPLIED MATERIALS INC·Filed 2002·Granted May 15, 2007·8 cites·31 claims
- 1146US6730561B2Method of forming a cup capacitorAPPLIED MATERIALS INC·Filed 2001·Granted May 4, 2004·1 cites·38 claims
- 1244US2008057729A1Etch methods to form anisotropic features for high aspect ratio applicationsSHEN MEIHUA·Filed 2007·Application pending·0 cites
- 1343US2004173572A1Method of plasma etching of high-K dielectric materials with high selectivity to underlying layersAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 1440US2006252265A1Etching high-kappa dielectric materials with good high-kappa foot control and silicon recess controlJIN GUANGXIANG·Filed 2005·Application pending·0 cites
- 1540US2007202700A1Etch methods to form anisotropic features for high aspect ratio applicationsAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 1638US2004132311A1Method of etching high-K dielectric materialsAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 1738US2006060565A9Method of etching metals with high selectivity to hafnium-based dielectric materialsAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 1837US2004007561A1Method for plasma etching of high-K dielectric materialsAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 1937US2004171272A1Method of etching metallic materials to form a tapered profileAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →