Inventor · disambiguated record
Haruo Okano
Also filed as: HARADA NOZOMU · OKANO HARUO
91 granted patents·6,037 citations·filing 1978–2000
99Inventor score
Files withTOSHIBA KK70TOKYO ELECTRON LTD12TOKYO SHIBAURA ELECTRIC CO5APPLIED MATERIALS INC1EBARA CORP1
Top patents by PatentIndex Score
91 records- 0198US5156881AMethod for forming a film on a substrate by activating a reactive gasTOSHIBA KK·Filed 1991·Granted Oct 20, 1992·376 cites·51 claims
- 0298US5030319AMethod of oxide etching with condensed plasma reaction productTOSHIBA KK·Filed 1989·Granted Jul 9, 1991·390 cites·6 claims
- 0397US5444207APlasma generating device and surface processing device and method for processing wafers in a uniform magnetic fieldTOSHIBA KK·Filed 1993·Granted Aug 22, 1995·132 cites·24 claims
- 0497US4492610ADry Etching method and device thereforTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Jan 8, 1985·72 cites·13 claims
- 0596US5429730AMethod of repairing defect of structureTOSHIBA KK·Filed 1993·Granted Jul 4, 1995·114 cites·54 claims
- 0696US5429995AMethod of manufacturing silicon oxide film containing fluorineTOSHIBA KK·Filed 1993·Granted Jul 4, 1995·421 cites·10 claims
- 0796US5413967AMethod of manufacturing semiconductor devicesTOSHIBA KK·Filed 1994·Granted May 9, 1995·292 cites·11 claims
- 0896US5385763AMethod for forming a film on a substrate by activating a reactive gasTOSHIBA KK·Filed 1994·Granted Jan 31, 1995·264 cites·42 claims
- 0995US5312519AMethod of cleaning a charged beam apparatusTOSHIBA KK·Filed 1992·Granted May 17, 1994·104 cites·9 claims
- 1095US5302240AMethod of manufacturing semiconductor deviceTOSHIBA KK·Filed 1993·Granted Apr 12, 1994·200 cites·22 claims
- 1195US4595601AMethod of selectively forming an insulation layerTOSHIBA KK·Filed 1985·Granted Jun 17, 1986·72 cites·20 claims
- 1294US4277304AIon source and ion etching processTOKYO SHIBAURA ELECTRIC CO·Filed 1979·Granted Jul 7, 1981·61 cites·9 claims
- 1393US5776557AMethod for forming a film on a substrate by activating a reactive gasTOSHIBA KK·Filed 1996·Granted Jul 7, 1998·110 cites·27 claims
- 1493US5731634ASemiconductor device having a metal film formed in a groove in an insulating filmTOSHIBA KK·Filed 1996·Granted Mar 24, 1998·102 cites·14 claims
- 1592US5775980APolishing method and polishing apparatusTOSHIBA KK·Filed 1996·Granted Jul 7, 1998·105 cites·8 claims
- 1691US6306756B1Method for production of semiconductor deviceTOSHIBA KK·Filed 2000·Granted Oct 23, 2001·62 cites·10 claims
- 1791US5607718APolishing method and polishing apparatusTOSHIBA KK·Filed 1994·Granted Mar 4, 1997·119 cites·29 claims
- 1891US5466942ACharged beam irradiating apparatus having a cleaning means and a method of cleaning a charged beam irradiating apparatusTOSHIBA KK·Filed 1993·Granted Nov 14, 1995·62 cites·16 claims
- 1990US5641702AMethod of making semiconductor integrated-circuit capacitorTOSHIBA KK·Filed 1995·Granted Jun 24, 1997·95 cites·12 claims
- 2089US5660671AMagnetron plasma processing apparatus and processing methodTOKYO ELECTRON LTD·Filed 1994·Granted Aug 26, 1997·49 cites·5 claims
- 2189US5660744APlasma generating apparatus and surface processing apparatusTOSHIBA KK·Filed 1995·Granted Aug 26, 1997·65 cites·23 claims
- 2289US5445996AMethod for planarizing a semiconductor device having a amorphous layerTOSHIBA KK·Filed 1993·Granted Aug 29, 1995·87 cites·1 claims
- 2388US5639699AFocused ion beam deposition using TMCTSTOSHIBA KK·Filed 1995·Granted Jun 17, 1997·62 cites·11 claims
- 2488US5298112AMethod for removing composite attached to material by dry etchingTOSHIBA KK·Filed 1992·Granted Mar 29, 1994·103 cites·36 claims
- 2588US4600492AMagnet driving method and device for sameTOKUDA SEISAKUSHO·Filed 1985·Granted Jul 15, 1986·58 cites·9 claims
- 2688US4529475ADry etching apparatus and method using reactive gasesTOSHIBA KK·Filed 1984·Granted Jul 16, 1985·68 cites·36 claims
- 2787US5597341ASemiconductor planarizing apparatusTOSHIBA KK·Filed 1995·Granted Jan 28, 1997·60 cites·14 claims
- 2887US5445710AMethod of manufacturing semiconductor deviceTOSHIBA KK·Filed 1994·Granted Aug 29, 1995·86 cites·18 claims
- 2987US5258332AMethod of manufacturing semiconductor devices including rounding of corner portions by etchingTOSHIBA KK·Filed 1993·Granted Nov 2, 1993·102 cites·26 claims
- 3087US5192714AMethod of manufacturing a multilayered metallization structure in which the conductive layer and insulating layer are selectively depositedTOSHIBA KK·Filed 1991·Granted Mar 9, 1993·50 cites·12 claims
- 3187US4431473ARIE Apparatus utilizing a shielded magnetron to enhance etchingTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Feb 14, 1984·65 cites·12 claims
- 3286US5409862AMethod for making aluminum single crystal interconnections on insulatorsTOSHIBA KK·Filed 1993·Granted Apr 25, 1995·56 cites·15 claims
- 3385US6132551AInductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coilAPPLIED MATERIALS INC·Filed 1997·Granted Oct 17, 2000·42 cites·54 claims
- 3485US6090701AMethod for production of semiconductor deviceTOSHIBA KK·Filed 1995·Granted Jul 18, 2000·74 cites·11 claims
- 3585US5654237AMethod of manufacturing semiconductor deviceTOSHIBA KK·Filed 1995·Granted Aug 5, 1997·59 cites·25 claims
- 3684US6185472B1Semiconductor device manufacturing method, manufacturing apparatus, simulation method and simulatorTOSHIBA KK·Filed 1996·Granted Feb 6, 2001·76 cites·120 claims
- 3784US4838978ADry etching apparatusTOSHIBA KK·Filed 1987·Granted Jun 13, 1989·70 cites·13 claims
- 3883US6093243ASemiconductor device and its fabricating methodTOSHIBA KK·Filed 1997·Granted Jul 25, 2000·50 cites·1 claims
- 3983US5514904ASemiconductor device with monocrystalline gate insulating filmTOSHIBA KK·Filed 1994·Granted May 7, 1996·57 cites·32 claims
- 4082US5686151AMethod of forming a metal oxide filmTOSHIBA KK·Filed 1996·Granted Nov 11, 1997·50 cites·23 claims
- 4182US5424246AMethod of manufacturing semiconductor metal wiring layer by reduction of metal oxideTOSHIBA KK·Filed 1993·Granted Jun 13, 1995·52 cites·8 claims
- 4282US4642171APhototreating apparatusTOSHIBA KK·Filed 1985·Granted Feb 10, 1987·32 cites·9 claims
- 4381US5914275APolishing apparatus and method for planarizing layer on a semiconductor waferTOSHIBA KK·Filed 1997·Granted Jun 22, 1999·43 cites·24 claims
- 4481US5707487AMethod of manufacturing semiconductor deviceTOSHIBA KK·Filed 1994·Granted Jan 13, 1998·73 cites·20 claims
- 4581US5561082AMethod for forming an electrode and/or wiring layer by reducing copper oxide or silver oxideTOSHIBA KK·Filed 1995·Granted Oct 1, 1996·44 cites·26 claims
- 4680US5223113AApparatus for forming reduced pressure and for processing objectTOKYO ELECTRON LTD·Filed 1991·Granted Jun 29, 1993·74 cites·13 claims
- 4780US4526643ADry etching apparatus using reactive ionsTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted Jul 2, 1985·46 cites·19 claims
- 4879US5948205APolishing apparatus and method for planarizing layer on a semiconductor waferTOSHIBA KK·Filed 1997·Granted Sep 7, 1999·41 cites·17 claims
- 4979US5661345ASemiconductor device having a single-crystal metal wiringTOSHIBA KK·Filed 1994·Granted Aug 26, 1997·35 cites·3 claims
- 5079US5582640ASemiconductor device and its fabricating methodTOSHIBA KK·Filed 1993·Granted Dec 10, 1996·50 cites·13 claims
Showing the top 50 of 91 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →