Inventor · disambiguated record
Hiraku Ishikawa
Also filed as: ISHIKAWA HIRAKU
26 granted patents·8 pending applications·629 citations·filing 1994–2017
97Inventor score
Top patents by PatentIndex Score
34 records- 0198US7658799B2Plasma film-forming apparatus and plasma film-forming methodTOKYO ELECTRON LTD·Filed 2004·Granted Feb 9, 2010·127 cites·13 claims
- 0291US6277706B1Method of manufacturing isolation trenches using silicon nitride linerNEC CORP·Filed 1998·Granted Aug 21, 2001·122 cites·14 claims
- 0381US5751050ASemiconductor device having a polysilicon resistor element with increased stability and method of fabricating sameNEC CORP·Filed 1996·Granted May 12, 1998·48 cites·14 claims
- 0481US5587344AMethod for fabricating an oxynitride film for use in a semiconductor deviceNEC CORP·Filed 1995·Granted Dec 24, 1996·61 cites·2 claims
- 0580US8017519B2Semiconductor device and manufacturing method thereofTOKYO ELECTRON LTD·Filed 2007·Granted Sep 13, 2011·6 cites·19 claims
- 0678US10388524B2Film forming method, boron film, and film forming apparatusTOKYO ELECTRON LTD·Filed 2017·Granted Aug 20, 2019·2 cites·12 claims
- 0778US5894170AWiring layer in semiconductor deviceNEC CORP·Filed 1997·Granted Apr 13, 1999·55 cites·16 claims
- 0877US8741396B2Method for forming amorphous carbon nitride film, amorphous carbon nitride film, multilayer resist film, method for manufacturing semiconductor device, and storage medium in which control program is storedISHIKAWA HIRAKU·Filed 2009·Granted Jun 3, 2014·5 cites·10 claims
- 0973US8461047B2Method for processing amorphous carbon film, and semiconductor device manufacturing method using the methodISHIKAWA HIRAKU·Filed 2009·Granted Jun 11, 2013·1 cites·8 claims
- 1071US7842356B2Substrate processing methodsTOKYO ELECTRON LTD·Filed 2006·Granted Nov 30, 2010·3 cites·12 claims
- 1170US5723386AMethod of manufacturing a semiconductor device capable of rapidly forming minute wirings without etching of the minute wiringsNEC CORP·Filed 1996·Granted Mar 3, 1998·22 cites·15 claims
- 1268US8377818B2Aftertreatment method for amorphous carbon filmTOKYO ELECTRON LTD·Filed 2007·Granted Feb 19, 2013·2 cites·15 claims
- 1368US8262844B2Plasma processing apparatus, plasma processing method and storage mediumISHIKAWA HIRAKU·Filed 2008·Granted Sep 11, 2012·3 cites·14 claims
- 1467US5861674AMultilevel interconnection in a semiconductor device and method for forming the sameNEC CORP·Filed 1998·Granted Jan 19, 1999·29 cites·2 claims
- 1567US5633208APlanarization of insulation film using low wettingness surfaceNEC CORP·Filed 1994·Granted May 27, 1997·39 cites·11 claims
- 1665US6528410B1Method for manufacturing semiconductor deviceNEC CORP·Filed 2000·Granted Mar 4, 2003·8 cites·19 claims
- 1764US6239016B1Multilevel interconnection in a semiconductor device and method for forming the sameNEC CORP·Filed 1998·Granted May 29, 2001·26 cites·8 claims
- 1861US6157083AFluorine doping concentrations in a multi-structure semiconductor deviceNEC CORP·Filed 1997·Granted Dec 5, 2000·21 cites·6 claims
- 1955US8674397B2Sealing film forming method, sealing film forming device, and light-emitting deviceTOKYO ELECTRON LTD·Filed 2012·Granted Mar 18, 2014·0 cites·8 claims
- 2055US8409460B2Forming method of amorphous carbon film, amorphous carbon film, multilayer resist film, manufacturing method of semiconductor device, and computer-readable storage mediumISHIKAWA HIRAKU·Filed 2008·Granted Apr 2, 2013·1 cites·7 claims
- 2155US6319847B1Semiconductor device using a thermal treatment of the device in a pressurized steam ambient as a planarization techniqueNEC CORP·Filed 1998·Granted Nov 20, 2001·20 cites·19 claims
- 2251US2009011602A1Film Forming Method of Amorphous Carbon Film and Manufacturing Method of Semiconductor Device Using the SameTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 2350US8936829B2Method of aftertreatment of amorphous hydrocarbon film and method for manufacturing electronic device by using the aftertreatment methodISHIKAWA HIRAKU·Filed 2009·Granted Jan 20, 2015·0 cites·10 claims
- 2450US2010243999A1Organic electronic device, organic electronic device manufacturing method, organic electronic device manufacturing apparatus, substrate processing system, protection film structure and storage medium with control program stored thereinTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 2549US2012156884A1Film forming method of amorphous carbon film and manufacturing method of semiconductor device using the sameNOZAWA TOSHIHISA·Filed 2012·Application pending·0 cites
- 2647US2010032838A1Amorphous carbon film, semiconductor device, film forming method, film forming apparatus and storage mediumTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 2747US2013209666A1Evaporating apparatus and evaporating methodKAMADA TOMIKO·Filed 2011·Application pending·0 cites
- 2847US2015194637A1Method for forming silicon nitride film, and apparatus for forming silicon nitride filmTOKYO ELECTRON LTD·Filed 2013·Application pending·0 cites
- 2944US6071832AMethod for manufacturing a reliable semiconductor device using ECR-CVD and implanting hydrogen ions into an active regionNEC CORP·Filed 1997·Granted Jun 6, 2000·10 cites·8 claims
- 3043US8809207B2Pattern-forming method and method for manufacturing semiconductor deviceISHIKAWA HIRAKU·Filed 2012·Granted Aug 19, 2014·0 cites·10 claims
- 3142US6716725B1Plasma processing method and semiconductor deviceTOKYO ELECTRON LTD·Filed 1999·Granted Apr 6, 2004·9 cites·18 claims
- 3242US5882975AMethod of fabricating salicide-structure semiconductor deviceNEC CORP·Filed 1996·Granted Mar 16, 1999·9 cites·20 claims
- 3339US2013330928A1Film forming device, substrate processing system and semiconductor device manufacturing methodISHIKAWA HIRAKU·Filed 2012·Application pending·0 cites
- 3438US2012160671A1Sputtering deviceISHIKAWA HIRAKU·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →