Inventor · disambiguated record
Jihperng Leu
Also filed as: LEU JIHPERNG
29 granted patents·14 pending applications·1,048 citations·filing 2000–2013
97Inventor score
Top patents by PatentIndex Score
43 records- 0197US6605874B2Method of making semiconductor device using an interconnectINTEL CORP·Filed 2001·Granted Aug 12, 2003·359 cites·27 claims
- 0296US6605549B2Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectricsINTEL CORP·Filed 2001·Granted Aug 12, 2003·162 cites·16 claims
- 0394US7018918B2Method of forming a selectively converted inter-layer dielectric using a porogen materialINTEL CORP·Filed 2003·Granted Mar 28, 2006·76 cites·13 claims
- 0494US6479391B2Method for making a dual damascene interconnect using a multilayer hard maskINTEL CORP·Filed 2000·Granted Nov 12, 2002·88 cites·7 claims
- 0590US6943121B2Selectively converted inter-layer dielectricINTEL CORP·Filed 2002·Granted Sep 13, 2005·43 cites·12 claims
- 0690US6867125B2Creating air gap in multi-level metal interconnects using electron beam to remove sacrificial materialINTEL CORP·Filed 2002·Granted Mar 15, 2005·54 cites·16 claims
- 0789US7466025B2Formation of interconnect structures by removing sacrificial material with supercritical carbon dioxideINTEL CORP·Filed 2005·Granted Dec 16, 2008·12 cites·25 claims
- 0887US6924222B2Formation of interconnect structures by removing sacrificial material with supercritical carbon dioxideINTEL CORP·Filed 2002·Granted Aug 2, 2005·32 cites·21 claims
- 0984US6998216B2Mechanically robust interconnect for low-k dielectric material using post treatmentINTEL CORP·Filed 2002·Granted Feb 14, 2006·33 cites·24 claims
- 1075US7145245B2Low-k dielectric film with good mechanical strength that varies in local porosity depending on location on substrate—thereinINTEL CORP·Filed 2005·Granted Dec 5, 2006·4 cites·6 claims
- 1174US7727892B2Method and apparatus for forming metal-metal oxide etch stop/barrier for integrated circuit interconnectsINTEL CORP·Filed 2002·Granted Jun 1, 2010·16 cites·20 claims
- 1274US7294934B2Low-K dielectric structure and methodINTEL CORP·Filed 2002·Granted Nov 13, 2007·21 cites·13 claims
- 1373US7214594B2Method of making semiconductor device using a novel interconnect cladding layerINTEL CORP·Filed 2002·Granted May 8, 2007·19 cites·17 claims
- 1473US6964919B2Low-k dielectric film with good mechanical strengthINTEL CORP·Filed 2002·Granted Nov 15, 2005·13 cites·11 claims
- 1573US6903461B2Semiconductor device having a region of a material which is vaporized upon exposing to ultraviolet radiationINTEL CORP·Filed 2003·Granted Jun 7, 2005·16 cites·9 claims
- 1673US6743712B2Method of making a semiconductor device by forming a masking layer with a tapered etch profileINTEL CORP·Filed 2002·Granted Jun 1, 2004·16 cites·8 claims
- 1773US6734094B2Method of forming an air gap within a structure by exposing an ultraviolet sensitive material to ultraviolet radiationINTEL CORP·Filed 2002·Granted May 11, 2004·16 cites·17 claims
- 1870US6794755B2Surface alteration of metal interconnect in integrated circuits for electromigration and adhesion improvementINTEL CORP·Filed 2003·Granted Sep 21, 2004·11 cites·6 claims
- 1968US7239019B2Selectively converted inter-layer dielectricINTEL CORP·Filed 2005·Granted Jul 3, 2007·2 cites·14 claims
- 2067US6992391B2Dual-damascene interconnects without an etch stop layer by alternating ILDsINTEL CORP·Filed 2001·Granted Jan 31, 2006·12 cites·15 claims
- 2164US7339271B2Metal-metal oxide etch stop/barrier for integrated circuit interconnectsINTEL CORP·Filed 2004·Granted Mar 4, 2008·9 cites·19 claims
- 2262US6846755B2Bonding a metal component to a low-k dielectric materialINTEL CORP·Filed 2003·Granted Jan 25, 2005·6 cites·16 claims
- 2362US6734118B2Dielectric material treatmentINTEL CORP·Filed 2002·Granted May 11, 2004·8 cites·15 claims
- 2461US7320935B2Semiconductor device using an interconnectINTEL CORP·Filed 2003·Granted Jan 22, 2008·6 cites·17 claims
- 2557US8299617B2Method and apparatus for forming metal-metal oxide etch stop/barrier for integrated circuit interconnectsMORROW XIAORONG·Filed 2010·Granted Oct 30, 2012·1 cites·5 claims
- 2657US7348283B2Mechanically robust dielectric film and stackINTEL CORP·Filed 2004·Granted Mar 25, 2008·5 cites·4 claims
- 2755US7164206B2Structure in a microelectronic device including a bi-layer for a diffusion barrier and an etch-stop layerINTEL CORP·Filed 2001·Granted Jan 16, 2007·8 cites·11 claims
- 2849US7175970B2Mechanically robust interconnect for low-k dielectric material using post treatmentINTEL CORP·Filed 2005·Granted Feb 13, 2007·0 cites·14 claims
- 2946US2005164489A1Creating air gap in multi-level metal interconnects using electron beam to remove sacrificial materialFiled 2005·Application pending·0 cites
- 3044US2005208753A1Dual-damascene interconnects without an etch stop layer by alternating ILDsOTT ANDREW·Filed 2005·Application pending·0 cites
- 3144US2005095743A1Bonding a metal component to a low-K dielectric materialFiled 2004·Application pending·0 cites
- 3244US2013330482A1Carbon-doped silicon nitride thin film and manufacturing method and device thereofUNIV NAT CHIAO TUNG·Filed 2013·Application pending·0 cites
- 3342US2005087873A1Method and structure for selective surface passivationFiled 2004·Application pending·0 cites
- 3441US2005272248A1Low-k dielectric structure and methodKLOSTER GRANT M·Filed 2005·Application pending·0 cites
- 3540US2004056366A1A method of forming surface alteration of metal interconnect in integrated circuits for electromigration and adhesion improvementFiled 2002·Application pending·0 cites
- 3640US2004126482A1Method and structure for selective surface passivationFiled 2002·Application pending·0 cites
- 3739US2005287787A1Porous ceramic materials as low-k films in semiconductor devicesKLOSTER GRANT M·Filed 2004·Application pending·0 cites
- 3837US2004119163A1Method of making semiconductor devices using carbon nitride, a low-dielectric-constant hard mask and/or etch stopFiled 2002·Application pending·0 cites
- 3936US2003173651A1Method of making a semiconductor device using a damascene interconnect with a laminated dielectricFiled 2002·Application pending·0 cites
- 4035US2003194857A1Method of making a semiconductor device that has copper damascene interconnects with enhanced electromigration reliabilityFiled 2002·Application pending·0 cites
- 4132US2003205823A1Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectricsLEU JIHPERNG·Filed 2003·Application pending·0 cites
- 4231US8963421B2Electroluminescent device including moisture barrier layerLEU JIHPERNG·Filed 2012·Granted Feb 24, 2015·0 cites·10 claims
- 4331US2005224980A1Interconnect adapted for reduced electron scatteringLEU JIHPERNG·Filed 2004·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Jihperng Leu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →