Inventor · disambiguated record
Jozef Brcka
Also filed as: BRCKA JOZEF
46 granted patents·11 pending applications·1,866 citations·filing 1999–2017
98Inventor score
Top patents by PatentIndex Score
57 records- 0199US6494998B1Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive elementTOKYO ELECTRON LTD·Filed 2000·Granted Dec 17, 2002·504 cites·19 claims
- 0298US10672596B2Ionized physical vapor deposition (IPVD) apparatus and method for an inductively coupled plasma sweeping sourceTOKYO ELECTRON LTD·Filed 2017·Granted Jun 2, 2020·40 cites·28 claims
- 0398US7435454B2Plasma enhanced atomic layer deposition system and methodTOKYO ELECTRON LTD·Filed 2005·Granted Oct 14, 2008·68 cites·21 claims
- 0498US6446572B1Embedded plasma source for plasma density improvementTOKYO ELECTRON LTD·Filed 2000·Granted Sep 10, 2002·311 cites·24 claims
- 0597US7341959B2Plasma enhanced atomic layer deposition system and methodTOKYO ELECTRON LTD·Filed 2005·Granted Mar 11, 2008·77 cites·22 claims
- 0696US7867409B2Control of ion angular distribution function at wafer surfaceTOKYO ELECTRON LTD·Filed 2007·Granted Jan 11, 2011·28 cites·20 claims
- 0796US7651570B2Solid precursor vaporization system for use in chemical vapor depositionTOKYO ELECTRON LTD·Filed 2005·Granted Jan 26, 2010·33 cites·40 claims
- 0895US8409398B2Control of ion angular distribution function at wafer surfaceBRCKA JOZEF·Filed 2010·Granted Apr 2, 2013·24 cites·20 claims
- 0995US7132128B2Method and system for depositing material on a substrate using a solid precursorTOKYO ELECTRON LTD·Filed 2005·Granted Nov 7, 2006·23 cites·15 claims
- 1095US6523493B1Ring-shaped high-density plasma source and methodTOKYO ELECTRON LTD·Filed 2000·Granted Feb 25, 2003·93 cites·39 claims
- 1195US6417626B1Immersed inductively—coupled plasma sourceTOKYO ELECTRON LTD·Filed 2001·Granted Jul 9, 2002·64 cites·46 claims
- 1295US6287435B1Method and apparatus for ionized physical vapor depositionTOKYO ELECTRON LTD·Filed 1999·Granted Sep 11, 2001·156 cites·12 claims
- 1394US8028655B2Plasma processing system with locally-efficient inductive plasma couplingTOKYO ELECTRON LTD·Filed 2010·Granted Oct 4, 2011·7 cites·7 claims
- 1494US6719886B2Method and apparatus for ionized physical vapor depositionTOKYO ELECTRON LTD·Filed 2001·Granted Apr 13, 2004·54 cites·28 claims
- 1593US8715455B2Multi-zone gas distribution system for a treatment systemBRCKA JOZEF·Filed 2007·Granted May 6, 2014·21 cites·25 claims
- 1693US8103492B2Plasma fluid modeling with transient to stochastic transformationBRCKA JOZEF·Filed 2008·Granted Jan 24, 2012·37 cites·24 claims
- 1792US7771562B2Etch system with integrated inductive couplingTOKYO ELECTRON LTD·Filed 2006·Granted Aug 10, 2010·16 cites·12 claims
- 1889US7810449B2Plasma processing system with locally-efficient inductive plasma couplingTOKYO ELECTRON LTD·Filed 2007·Granted Oct 12, 2010·8 cites·3 claims
- 1989US6666982B2Protection of dielectric window in inductively coupled plasma generationTOKYO ELECTRON LTD·Filed 2001·Granted Dec 23, 2003·37 cites·7 claims
- 2088US6652711B2Inductively-coupled plasma processing systemTOKYO ELECTRON LTD·Filed 2001·Granted Nov 25, 2003·31 cites·29 claims
- 2188US6237526B1Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasmaTOKYO ELECTRON LTD·Filed 1999·Granted May 29, 2001·56 cites·67 claims
- 2286US7854213B2Modulated gap segmented antenna for inductively-coupled plasma processing systemTOKYO ELECTRON LTD·Filed 2006·Granted Dec 21, 2010·6 cites·2 claims
- 2385US7976674B2Embedded multi-inductive large area plasma sourceTOKYO ELECTRON LTD·Filed 2007·Granted Jul 12, 2011·21 cites·30 claims
- 2484US6474258B2Apparatus and method for improving plasma distribution and performance in an inductively coupled plasmaTOKYO ELECTRON LTD·Filed 2001·Granted Nov 5, 2002·32 cites·16 claims
- 2583US7426900B2Integrated electrostatic inductive coupling for plasma processingTOKYO ELECTRON LTD·Filed 2003·Granted Sep 23, 2008·18 cites·3 claims
- 2683US6853953B2Method for characterizing the performance of an electrostatic chuckTOKYO ELECTRON LTD·Filed 2001·Granted Feb 8, 2005·37 cites·41 claims
- 2782US7673583B2Locally-efficient inductive plasma coupling for plasma processing systemTOKYO ELECTRON LTD·Filed 2006·Granted Mar 9, 2010·4 cites·16 claims
- 2878US7566477B2Method for saturating a carrier gas with precursor vaporTOKYO ELECTRON LTD·Filed 2005·Granted Jul 28, 2009·3 cites·18 claims
- 2976US7763551B2RLSA CVD deposition control using halogen gas for hydrogen scavengingTOKYO ELECTRON LTD·Filed 2008·Granted Jul 27, 2010·2 cites·14 claims
- 3076US7273533B2Plasma processing system with locally-efficient inductive plasma couplingTOKYO ELECTRON LTD·Filed 2003·Granted Sep 25, 2007·8 cites·11 claims
- 3175US10413913B2Methods and systems for dielectrophoresis (DEP) separationTOKYO ELECTRON LTD·Filed 2017·Granted Sep 17, 2019·1 cites·20 claims
- 3273US8480914B2Multiple gas plasma forming method and ICP sourceBRCKA JOZEF·Filed 2012·Granted Jul 9, 2013·2 cites·20 claims
- 3370US7776748B2Selective-redeposition structures for calibrating a plasma processTOKYO ELECTRON LTD·Filed 2006·Granted Aug 17, 2010·3 cites·19 claims
- 3470US7591935B2Enhanced reliability deposition baffle for iPVDTOKYO ELECTRON LTD·Filed 2005·Granted Sep 22, 2009·2 cites·10 claims
- 3569US7556718B2Highly ionized PVD with moving magnetic field envelope for uniform coverage of feature structure and waferTOKYO ELECTRON LTD·Filed 2004·Granted Jul 7, 2009·9 cites·19 claims
- 3668US10066293B2Method of cleaning the filament and reactor's interior in FACVDTOKYO ELECTRON LTD·Filed 2014·Granted Sep 4, 2018·0 cites·14 claims
- 3768US7075771B2Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing systemTOKYO ELECTRON LTD·Filed 2003·Granted Jul 11, 2006·11 cites·26 claims
- 3867US9228261B2System and method for tissue construction using an electric field applicatorBRCKA JOZEF·Filed 2012·Granted Jan 5, 2016·1 cites·25 claims
- 3967US8916055B2Method and device for controlling pattern and structure formation by an electric fieldBRCKA JOZEF·Filed 2012·Granted Dec 23, 2014·1 cites·35 claims
- 4067US6946054B2Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processingTOKYO ELECTRON LTD·Filed 2002·Granted Sep 20, 2005·11 cites·31 claims
- 4163US8092658B2Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition processBRCKA JOZEF·Filed 2007·Granted Jan 10, 2012·0 cites·17 claims
- 4260US2007113789A1Method and system for depositing material on a substrate using a solid precursorTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 4358US7744735B2Ionized PVD with sequential deposition and etchingTOKYO ELECTRON LTD·Filed 2004·Granted Jun 29, 2010·6 cites·30 claims
- 4457US2015152556A1Method and device for controlling pattern and structure formation by an electric fieldTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
- 4557US2008236491A1Multiflow integrated icp sourceTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 4654US2011232567A1Method of cleaning the filament and reactor's interior in facvdTOKYO ELECTRON LTD·Filed 2010·Application pending·0 cites
- 4752US2009242396A1Adjustable magnet pack for semiconductor wafer processingTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 4850US2005266173A1Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition processTOKYO ELECTRON LTD·Filed 2004·Application pending·0 cites
- 4950US2007068795A1Hollow body plasma uniformity adjustment device and methodBRCKA JOZEF·Filed 2005·Application pending·0 cites
- 5049US7749398B2Selective-redeposition sources for calibrating a plasma processTOKYO ELECTRON LTD·Filed 2006·Granted Jul 6, 2010·0 cites·35 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →